KR970068065A - 반도체 레이저 장치 - Google Patents

반도체 레이저 장치 Download PDF

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Publication number
KR970068065A
KR970068065A KR1019960041991A KR19960041991A KR970068065A KR 970068065 A KR970068065 A KR 970068065A KR 1019960041991 A KR1019960041991 A KR 1019960041991A KR 19960041991 A KR19960041991 A KR 19960041991A KR 970068065 A KR970068065 A KR 970068065A
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South Korea
Prior art keywords
layer
deformation
region
main region
well
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KR1019960041991A
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English (en)
Inventor
타카시 모토다
켄이치 오노
Original Assignee
기다오까 다까시
미쓰비시 뎅끼 가부시끼가이샤
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Application filed by 기다오까 다까시, 미쓰비시 뎅끼 가부시끼가이샤 filed Critical 기다오까 다까시
Publication of KR970068065A publication Critical patent/KR970068065A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/3436—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)P
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

[과제]
우물층과 배리어층이 각각 다른 변형을 가지는 변형 다중 양자우물 활성층에 있어서, 우물층과 배리어층의 계면에서의 전위등의 격자 결합의 발생을 방지한다.
[해결수단]
우물층(11)은 Ga0.56In0.44P로 이루어지는 주요영역(110)과, 이 영역에서 우물층/배리어층계면까지의 사이에서, 그 변형이 -0.5%로 부터 -0.1%로 점차 변화하도록 조성이 점차 변화하고 있는 GaInP로 이루어지는 천이영역(111)에 의해 구성되고, 또, 배리어층(12)은, (Al0.5Ga0.5)0.452In0.548P로 이루어지는 주요영역(120)과, 이영역에서 배리어층/ 우물층 계면까지의 사이에서, 그 변형이 +0.4%로부터 -0.1%까지 점차 변화하도록 조성이 점차 변화하고 있는 AlGaInP으로 이루어지는 천이영역(121)에 의해 구성되어 있다.

Description

반도체 레이저 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도 1은 본 발명의 실시의 형태 2에 의한 반도체 레이저 장치를 표시하는 단면도.

Claims (3)

  1. 균일한 변형을 가지는 주요영역을 각각 포함하는 복수의 우물층과 그 우물층의 주요영역의 변형과는 다른 균일한 변형을 가지는 주요영역을 각각 포함하는 복수의 배리어층이 교대로 적층되어서 이루어진 변형 다중 양자우물 활성층을 구비한 반도체 레이저 장치에 있어서, 상기 복수의 우물층및 상기 복수의 배리어층 내의 적어도 일층은, 그 층이 포함하는 상기 주요영역에서 그 층에 인접하는 층에 가까이 감에 따라 그 주요영역의 변형으로부터 그 층에 인접하는 층이 포함하는 상기 주요영역의 변형이 가까이 가도록 그 변형이 점차 변화하는 천이영역을 포함하고, 사익 천이영역을 포함하는 층과 그 층에 인접한 층의 사이의 계면에 있어서의 그 2층의 변형량의 차가, 그 2층의 상기 주요영역의 변형량의 차보다 작은 것을 특징으로 하는 반도체 레이저 장치.
  2. 제1항에 있어서, 상기 우물층 주요영역이 가지는 변형은 인장변형이고, 사익 배리어층 주요영역이 가지는 변형을 압축 변형인 것을 특징으로 하는 반도체 레이저 장치.
  3. 제1항에 있어서, 상기 우물층 주요영역이 가지는 변형은 압축 변형이고, 상기 배리어층 주요영역이 가지는 변형은 인장 변형인 것을 특징으로 하는 반도체 레이저 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960041991A 1996-03-01 1996-09-24 반도체 레이저 장치 KR970068065A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP96-044713 1996-03-01
JP4471396A JPH09246654A (ja) 1996-03-01 1996-03-01 半導体レーザ装置

Publications (1)

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KR970068065A true KR970068065A (ko) 1997-10-13

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US (1) US5694410A (ko)
JP (1) JPH09246654A (ko)
KR (1) KR970068065A (ko)
CN (1) CN1159084A (ko)
DE (1) DE19651352A1 (ko)
TW (1) TW333719B (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3420087B2 (ja) * 1997-11-28 2003-06-23 Ｎｅｃエレクトロニクス株式会社 半導体発光素子
JP2000244063A (ja) * 1999-02-19 2000-09-08 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
JP2001094219A (ja) * 1999-09-22 2001-04-06 Sanyo Electric Co Ltd 半導体発光デバイス
US6274463B1 (en) 2000-07-31 2001-08-14 Hewlett-Packard Company Fabrication of a photoconductive or a cathoconductive device using lateral solid overgrowth method
JP2005353654A (ja) * 2004-06-08 2005-12-22 Mitsubishi Electric Corp 半導体レーザ素子およびその製造方法
DE102007057708A1 (de) * 2007-09-26 2009-04-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP5407359B2 (ja) * 2009-01-23 2014-02-05 信越半導体株式会社 発光ダイオード
US20110160919A1 (en) * 2009-12-30 2011-06-30 Orr David C Mobile fluid delivery control system and method
JP5684501B2 (ja) * 2010-07-06 2015-03-11 昭和電工株式会社 発光ダイオード用エピタキシャルウェーハ
US20180269658A1 (en) * 2016-05-05 2018-09-20 Macom Technology Solutions Holdings, Inc. Semiconductor laser incorporating an electron barrier with low aluminum content
CN106340806A (zh) * 2016-11-14 2017-01-18 北京青辰光电科技有限公司 一种波长为650nm的分布反馈半导体激光器的制作方法
WO2019022960A1 (en) * 2017-07-28 2019-01-31 Lumileds Llc CONSTRAINTS OF ALGAINP FOR EFFICIENT BLOCKING OF ELECTRON AND HOLES IN LIGHT EMITTING DEVICES
US11322650B2 (en) 2017-07-28 2022-05-03 Lumileds Llc Strained AlGaInP layers for efficient electron and hole blocking in light emitting devices

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Publication number Priority date Publication date Assignee Title
JP3145718B2 (ja) * 1990-12-28 2001-03-12 日本電気株式会社 半導体レーザ
JPH05175601A (ja) * 1991-12-20 1993-07-13 Fujikura Ltd 多重量子井戸半導体レーザ
JPH05343738A (ja) * 1992-06-09 1993-12-24 Fujitsu Ltd 光半導体装置の製造方法
JP2833396B2 (ja) * 1993-01-28 1998-12-09 松下電器産業株式会社 歪多重量子井戸半導体レーザ
US5394424A (en) * 1993-07-14 1995-02-28 The Furukawa Electric Co., Ltd. Semiconductor laser device
JPH07183614A (ja) * 1993-12-24 1995-07-21 Fujikura Ltd 歪多重量子井戸光デバイス

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CN1159084A (zh) 1997-09-10
JPH09246654A (ja) 1997-09-19
TW333719B (en) 1998-06-11
DE19651352A1 (de) 1997-09-04
US5694410A (en) 1997-12-02

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