TW333719B - The semiconductor laser apparatus - Google Patents

The semiconductor laser apparatus

Info

Publication number
TW333719B
TW333719B TW085110640A TW85110640A TW333719B TW 333719 B TW333719 B TW 333719B TW 085110640 A TW085110640 A TW 085110640A TW 85110640 A TW85110640 A TW 85110640A TW 333719 B TW333719 B TW 333719B
Authority
TW
Taiwan
Prior art keywords
semiconductor laser
layers
laser apparatus
deformation
layer
Prior art date
Application number
TW085110640A
Other languages
English (en)
Inventor
Takashi Motoda
Kenichi Ono
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW333719B publication Critical patent/TW333719B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/3436—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)P
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
TW085110640A 1996-03-01 1996-08-31 The semiconductor laser apparatus TW333719B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4471396A JPH09246654A (ja) 1996-03-01 1996-03-01 半導体レーザ装置

Publications (1)

Publication Number Publication Date
TW333719B true TW333719B (en) 1998-06-11

Family

ID=12699071

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085110640A TW333719B (en) 1996-03-01 1996-08-31 The semiconductor laser apparatus

Country Status (6)

Country Link
US (1) US5694410A (zh)
JP (1) JPH09246654A (zh)
KR (1) KR970068065A (zh)
CN (1) CN1159084A (zh)
DE (1) DE19651352A1 (zh)
TW (1) TW333719B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3420087B2 (ja) * 1997-11-28 2003-06-23 Ｎｅｃエレクトロニクス株式会社 半導体発光素子
JP2000244063A (ja) * 1999-02-19 2000-09-08 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
JP2001094219A (ja) * 1999-09-22 2001-04-06 Sanyo Electric Co Ltd 半導体発光デバイス
US6274463B1 (en) 2000-07-31 2001-08-14 Hewlett-Packard Company Fabrication of a photoconductive or a cathoconductive device using lateral solid overgrowth method
JP2005353654A (ja) * 2004-06-08 2005-12-22 Mitsubishi Electric Corp 半導体レーザ素子およびその製造方法
DE102007057708A1 (de) * 2007-09-26 2009-04-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP5407359B2 (ja) * 2009-01-23 2014-02-05 信越半導体株式会社 発光ダイオード
US20110160919A1 (en) * 2009-12-30 2011-06-30 Orr David C Mobile fluid delivery control system and method
JP5684501B2 (ja) 2010-07-06 2015-03-11 昭和電工株式会社 発光ダイオード用エピタキシャルウェーハ
US20180269658A1 (en) * 2016-05-05 2018-09-20 Macom Technology Solutions Holdings, Inc. Semiconductor laser incorporating an electron barrier with low aluminum content
CN106340806A (zh) * 2016-11-14 2017-01-18 北京青辰光电科技有限公司 一种波长为650nm的分布反馈半导体激光器的制作方法
JP6999024B2 (ja) * 2017-07-28 2022-01-18 ルミレッズ リミテッド ライアビリティ カンパニー 発光装置における効率的な電子およびホールブロック用の歪みＡｌＧａＩｎＰ層
US11322650B2 (en) 2017-07-28 2022-05-03 Lumileds Llc Strained AlGaInP layers for efficient electron and hole blocking in light emitting devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3145718B2 (ja) * 1990-12-28 2001-03-12 日本電気株式会社 半導体レーザ
JPH05175601A (ja) * 1991-12-20 1993-07-13 Fujikura Ltd 多重量子井戸半導体レーザ
JPH05343738A (ja) * 1992-06-09 1993-12-24 Fujitsu Ltd 光半導体装置の製造方法
JP2833396B2 (ja) * 1993-01-28 1998-12-09 松下電器産業株式会社 歪多重量子井戸半導体レーザ
US5394424A (en) * 1993-07-14 1995-02-28 The Furukawa Electric Co., Ltd. Semiconductor laser device
JPH07183614A (ja) * 1993-12-24 1995-07-21 Fujikura Ltd 歪多重量子井戸光デバイス

Also Published As

Publication number Publication date
CN1159084A (zh) 1997-09-10
KR970068065A (ko) 1997-10-13
US5694410A (en) 1997-12-02
JPH09246654A (ja) 1997-09-19
DE19651352A1 (de) 1997-09-04

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