WO2002073705A8 - Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung - Google Patents

Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung

Info

Publication number
WO2002073705A8
WO2002073705A8 PCT/DE2002/000514 DE0200514W WO02073705A8 WO 2002073705 A8 WO2002073705 A8 WO 2002073705A8 DE 0200514 W DE0200514 W DE 0200514W WO 02073705 A8 WO02073705 A8 WO 02073705A8
Authority
WO
WIPO (PCT)
Prior art keywords
radiation
window
producing
same
primary surface
Prior art date
Application number
PCT/DE2002/000514
Other languages
English (en)
French (fr)
Other versions
WO2002073705A3 (de
WO2002073705A2 (de
Inventor
Johannes Baur
Dominik Eisert
Michael Fehrer
Berthold Hahn
Volker Haerle
Marianne Ortmann
Uwe Strauss
Johannes Voelkl
Ulrich Zehnder
Original Assignee
Osram Opto Semiconductors Gmbh
Johannes Baur
Dominik Eisert
Michael Fehrer
Berthold Hahn
Volker Haerle
Marianne Ortmann
Uwe Strauss
Johannes Voelkl
Ulrich Zehnder
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh, Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Haerle, Marianne Ortmann, Uwe Strauss, Johannes Voelkl, Ulrich Zehnder filed Critical Osram Opto Semiconductors Gmbh
Priority to JP2002572649A priority Critical patent/JP2004521498A/ja
Publication of WO2002073705A2 publication Critical patent/WO2002073705A2/de
Publication of WO2002073705A3 publication Critical patent/WO2002073705A3/de
Priority to US10/657,841 priority patent/US7169632B2/en
Publication of WO2002073705A8 publication Critical patent/WO2002073705A8/de
Priority to US11/567,977 priority patent/US8138511B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

Die Erfindung beschreibt ein strahlungsemittierendes Halbleiterbauelement mit verbesserter Strahlungsausbeute sowie ein Verfahren zu dessen Herstellung. Das Halbleiterbauelement weist eine Mehrschichtstruktur (2) mit einer aktiven Schicht (3) zur Strahlungserzeugung innerhalb der Mehrschichtstruktur (2) sowie ein Fenster (1) mit einer ersten und einer zweiten Hauptfläche auf. Die Mehrschichtstruktur grenzt an die erste Hauptfläche (5) des Fensters (1). Von der zweiten Hauptfläche (6) her ist in dem Fenster (1) mindestens eine Ausnehmung zur Erhöhung der Strahlungsausbeute gebildet. Die Ausnehmung weist vorzugsweise einen trapezförmigen, sich zur ersten Hauptfläche (5) hin verjüngenden Querschnitt auf und kann beispielsweise durch Einsägen des Fensters hergestellt werden.
PCT/DE2002/000514 2001-03-09 2002-02-13 Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung WO2002073705A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002572649A JP2004521498A (ja) 2001-03-09 2002-02-13 ビーム放射半導体素子およびその作製方法
US10/657,841 US7169632B2 (en) 2001-03-09 2003-09-09 Radiation-emitting semiconductor component and method for producing the semiconductor component
US11/567,977 US8138511B2 (en) 2001-03-09 2006-12-07 Radiation-emitting semiconductor component and method for producing the semiconductor component

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10111501.6A DE10111501B4 (de) 2001-03-09 2001-03-09 Strahlungsemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung
DE10111501.6 2001-03-09

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/657,841 Continuation US7169632B2 (en) 2001-03-09 2003-09-09 Radiation-emitting semiconductor component and method for producing the semiconductor component

Publications (3)

Publication Number Publication Date
WO2002073705A2 WO2002073705A2 (de) 2002-09-19
WO2002073705A3 WO2002073705A3 (de) 2002-12-12
WO2002073705A8 true WO2002073705A8 (de) 2003-11-13

Family

ID=7676946

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/000514 WO2002073705A2 (de) 2001-03-09 2002-02-13 Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung

Country Status (5)

Country Link
US (2) US7169632B2 (de)
JP (1) JP2004521498A (de)
DE (1) DE10111501B4 (de)
TW (1) TW540166B (de)
WO (1) WO2002073705A2 (de)

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Also Published As

Publication number Publication date
WO2002073705A3 (de) 2002-12-12
TW540166B (en) 2003-07-01
DE10111501A1 (de) 2002-09-19
WO2002073705A2 (de) 2002-09-19
JP2004521498A (ja) 2004-07-15
DE10111501B4 (de) 2019-03-21
US8138511B2 (en) 2012-03-20
US7169632B2 (en) 2007-01-30
US20080179380A1 (en) 2008-07-31
US20040046179A1 (en) 2004-03-11

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