KR970067780A - 대량 메모리와 대량 메모리의 제조방법 - Google Patents

대량 메모리와 대량 메모리의 제조방법 Download PDF

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Publication number
KR970067780A
KR970067780A KR1019970007699A KR19970007699A KR970067780A KR 970067780 A KR970067780 A KR 970067780A KR 1019970007699 A KR1019970007699 A KR 1019970007699A KR 19970007699 A KR19970007699 A KR 19970007699A KR 970067780 A KR970067780 A KR 970067780A
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South Korea
Prior art keywords
mass memory
macroblock
forming
interconnect network
blocks
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KR1019970007699A
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English (en)
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미리앙 우다르
프랑수아 베르나르
쟝-마르끄 뷔로
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뷔 땅 쥬느비에프
톰슨-시에스에프
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Publication of KR970067780A publication Critical patent/KR970067780A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)

Abstract

본 발명은 대규모 집적도를 가진 대량 메모리와 그러한 메모리의 제조 방법에 관한 것이다.

Description

대량 메모리와 대량 메모리의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도 9 는 스택된 칩의블럭들이 M×N 행렬 배열고 구성되는 매크로블럭을 예시하는 도면

Claims (8)

  1. 상호 접속 네트워크에 의해 제어 회로에 접속된 스택된 칩들의 블럭을 구비하는 기능적 대량 메모리에 있어서, 스택된 칩 블럭들의 행렬 배열에 의해 구성되는 매크로블럭을 구비하며, 모놀리식 배열은 상호 접속 네트워크와 제어 회로가 중첩된 기판을 구성하는 것을 특징으로 하는 기능적 대량 메모리.
  2. 제 1 항에 있어서, 매크로블럭은 열적 또는 전기적으로 전도되는 상보 소자를 구비하는 것을 특징으로 하는 기능적 대량 메모리.
  3. 제 1 항 또는 2항에 있어서, 칩의 피복된 블럭 사이에 수지을 구비하는 것을 특징으로 하는 기능적 대량 메모리.
  4. 제 1 항 또는 2 항에 있어서, 블럭의 행 사이에 접착 필름을 구비하는 것을 특징으로 하는 기능적 대량 메모리.
  5. 한 면이 칩의 입력부/츨력부와 상호 접속 네트워크와 제어 회로에 접속되는 전도 트랙의 절단면을 포함하는 스택된 칩들의 블럭을 구비하는 기능적 대량 메모리의제조 방법에 있어서, 스택된 칩 블럭의 행렬 배열에 의해 형성되고, 트랙 절단면이 나타나는 한 면을 갖는 매크로블럭을 형성하는 단계, 매크로블럭의 면상에 상호 접속 내트워크를 형성하는 단계, 및 제어 회로를 상호 접속 네트워크에 접속하는 단계를 구비하는 것을 특징으로 하는 기능적 대량 메모리의 제조 방법.
  6. 제5항에 있어서, 상기 매크로블럭을 형성하는 단계는 칩의 평면에 수직인 방향 Y 의 블럭내에 위치 지정 구멍을 형성하는 단계, 위치 지정 구멍내로 위치 지정 막대를 도입하여 방향 Y 로 N 블럭이 M 스택을 형성하는 단계, 및 방향 Y 에 수직인 방향 X 로 M 스택을 조립하는 단계를 구비하는 것을 특징으로 하는 기능적 대량 메모리의 제조 방법.
  7. 제 5 항에 있어서, 피복 수지로 블럭들의 세트를 피복함으로써 매클블럭을 형성하는 단계, 및 메크로블럭의 면을 나타내기 위하여 블럭 세트의 피복을 폴리싱과 기계 가공하는 단계를 구비하는 것을 특징으로 하는 기능적 대량 메모리의 제조 방법.
  8. 제 5 항 내지 제 7 항 중의 한 항에 있어서, 금속층과 비아홀로 형성된 유전체 층의 교번 증착에 의해 상호 접속 네트워크를 형성하는 단계를 구비하는 것을 특징으로 하는 기능적 대량 메모리의 제조 방법.
KR1019970007699A 1996-03-08 1997-03-07 대량 메모리와 대량 메모리의 제조방법 KR970067780A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9602959 1996-03-08
FR9602959A FR2745973B1 (fr) 1996-03-08 1996-03-08 Memoire de masse et procede de fabrication de memoire de masse

Publications (1)

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KR970067780A true KR970067780A (ko) 1997-10-13

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KR1019970007699A KR970067780A (ko) 1996-03-08 1997-03-07 대량 메모리와 대량 메모리의 제조방법

Country Status (6)

Country Link
US (1) US5908304A (ko)
EP (1) EP0794574B1 (ko)
JP (1) JPH09246460A (ko)
KR (1) KR970067780A (ko)
DE (1) DE69718223T2 (ko)
FR (1) FR2745973B1 (ko)

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Publication number Priority date Publication date Assignee Title
FR2770932B1 (fr) 1997-11-07 2001-11-16 Thomson Csf Procede de fabrication d'une sonde acoustique
FR2779575B1 (fr) 1998-06-05 2003-05-30 Thomson Csf Sonde acoustique multielements comprenant un film composite conducteur et procede de fabrication
FR2789822B1 (fr) 1999-02-12 2001-06-08 Thomson Csf Dispositif a ondes de surface connecte a une embase avec un adhesif conducteur
FR2799883B1 (fr) 1999-10-15 2003-05-30 Thomson Csf Procede d'encapsulation de composants electroniques
WO2001056067A1 (en) * 2000-01-31 2001-08-02 Lockheed Martin Corporation Micro electro-mechanical component and system architecture
JP3502033B2 (ja) * 2000-10-20 2004-03-02 沖電気工業株式会社 テスト回路
FR2819143B1 (fr) * 2000-12-28 2003-03-07 Thomson Csf Procede de realisation de plots de connexion sur un circuit imprime
JP3999945B2 (ja) * 2001-05-18 2007-10-31 株式会社東芝 半導体装置の製造方法
US20090127694A1 (en) * 2007-11-14 2009-05-21 Satoshi Noro Semiconductor module and image pickup apparatus
JP4709868B2 (ja) * 2008-03-17 2011-06-29 株式会社東芝 半導体記憶装置

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JPS5837948A (ja) * 1981-08-31 1983-03-05 Toshiba Corp 積層半導体記憶装置
JP2559700B2 (ja) * 1986-03-18 1996-12-04 富士通株式会社 半導体装置の製造方法
EP0385979B1 (en) * 1987-10-20 1993-08-11 Irvine Sensors Corporation High-density electronic modules, process and product
US4983533A (en) * 1987-10-28 1991-01-08 Irvine Sensors Corporation High-density electronic modules - process and product
US5104820A (en) * 1989-07-07 1992-04-14 Irvine Sensors Corporation Method of fabricating electronic circuitry unit containing stacked IC layers having lead rerouting
US5235672A (en) * 1991-02-06 1993-08-10 Irvine Sensors Corporation Hardware for electronic neural network
JPH0715969B2 (ja) * 1991-09-30 1995-02-22 インターナショナル・ビジネス・マシーンズ・コーポレイション マルチチツプ集積回路パツケージ及びそのシステム
FR2688629A1 (fr) * 1992-03-10 1993-09-17 Thomson Csf Procede et dispositif d'encapsulation en trois dimensions de pastilles semi-conductrices.
DE69426695T2 (de) * 1993-04-23 2001-08-09 Irvine Sensors Corp Elektronisches modul mit einem stapel von ic-chips
US5362986A (en) * 1993-08-19 1994-11-08 International Business Machines Corporation Vertical chip mount memory package with packaging substrate and memory chip pairs
US5561622A (en) * 1993-09-13 1996-10-01 International Business Machines Corporation Integrated memory cube structure

Also Published As

Publication number Publication date
US5908304A (en) 1999-06-01
DE69718223T2 (de) 2003-08-28
EP0794574A1 (fr) 1997-09-10
EP0794574B1 (fr) 2003-01-08
FR2745973A1 (fr) 1997-09-12
JPH09246460A (ja) 1997-09-19
FR2745973B1 (fr) 1998-04-03
DE69718223D1 (de) 2003-02-13

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