KR970063392A - 반도체 웨이퍼의 제조방법 - Google Patents
반도체 웨이퍼의 제조방법 Download PDFInfo
- Publication number
- KR970063392A KR970063392A KR1019970004968A KR19970004968A KR970063392A KR 970063392 A KR970063392 A KR 970063392A KR 1019970004968 A KR1019970004968 A KR 1019970004968A KR 19970004968 A KR19970004968 A KR 19970004968A KR 970063392 A KR970063392 A KR 970063392A
- Authority
- KR
- South Korea
- Prior art keywords
- grinding
- cutting
- semiconductor wafer
- auxiliary
- section
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
- B28D5/028—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a ring blade having an inside cutting edge
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B47/00—Drives or gearings; Equipment therefor
- B24B47/22—Equipment for exact control of the position of the grinding tool or work at the start of the grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/03—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent according to the final size of the previously ground workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/003—Multipurpose machines; Equipment therefor
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mining & Mineral Resources (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
연삭공구를 사용하여 단결정의 단면을 연삭하고, 연삭공구를 사용하여 단결정으로부터 반도체웨이퍼로 절단하며, 연삭할때 소정깊이의 연삭모마모를 형성하고 그 반도체 웨이퍼를 연삭단면과 가급적수평으로한 절단 평면내에서 절단하는 순서를 반복하여 반도체웨이퍼로 제조하는 방법에 관한 것이다.
이 방법은 a) 보조체 표면 일부를 동시에 연삭시켜 그 보조체 표면과 단면을 하나의 평면내에 설정하고 연삭에 의해 보조체에서 마모시킨 재료의 두께를 연삭 마모와 동일하게 하며; b) 절단 공구를 사용하여 그 절단 평면내에서 보조체를 절단하고 연삭부분과 연삭하지 않은 부분을 구비한 절단 섹션을 형성하며, c) 연삭전에 보조체의 연삭표면과 보조체 표면 사이의 거리 또는 연삭하지 않은 부분에서 절단섹션의 두께와 반도체 웨이퍼의 두께의 차이로서 그 연삭 마모를 측정함을 구성한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 단결정 단면 연삭시의 상태 개략도.
제2도는 단결정에서 반도체웨이퍼를 절단할때의 개략도.
Claims (3)
- 연삭 공구를 사용하여 단결정의 단면(end face)을 연삭하고, 절단 공구를 사용하여 단결정에서 반도체웨이퍼를 절단하며, 소정깊이의 연삭 마모를 연삭할때 형성하고, 그 반도체 웨이퍼를 연삭단면(ground end face)에 가급적 평행한 절단 평면내에서 절단시키는 순서를 반복하여 반도체 웨이퍼를 제조하는 방법에 있어서, a) 보조제 표면 일부를 동시에 연삭시켜, 그 보조체의 표면과 단면을 하나의 평면내서 설정하고, 연삭에 의해 그 보조체에서 마모시킨 그 재로의 두께를 그 연삭 마모와 동일하게 하며, b) 그 절단 공구를 사용하여 절단평면내에서 보조체를 절단하여, 연삭부분과 연삭하지 않은 부분을 가진 절단 섹션을 형성하고, c) 연삭전에 그 보조체의 연삭표면과 보조체의 표면사이의 거리 또는 연삭되지 않은 부분에서 절단섹션의 두께와 반도체웨이퍼의 두께의 차이로 연삭 마모를 측정함을 특징으로 하는 방법.
- 제1항에 있어서, 반도체 웨이퍼를 절단할때, 그 절단 평면에 대한 절삭 공구의 편차를 측정하며, 필요한 연삭 마모는 소정편차의 작용으로 측정되고, 그 필요한 연삭 마모는 단결정의 단면을 연삭하는 연삭공구에 대하여 설정하며 그 다음 반도체 웨이퍼를 절단시킨 다음, 실제로 얼어진 연삭마모를 측정함을 특징으로 하는 방법.
- 제1항에 있어서, 그 보조체의 연삭표면은 페르트미더(phertometer)로 조사하며, 그 연삭공구의 상태는 조사결과에 의해 평가함을 특징으로 하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE96-19607695.1 | 1996-02-29 | ||
DE19607695A DE19607695A1 (de) | 1996-02-29 | 1996-02-29 | Verfahren zur Herstellung von Halbleiterscheiben |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970063392A true KR970063392A (ko) | 1997-09-12 |
KR100235542B1 KR100235542B1 (ko) | 1999-12-15 |
Family
ID=7786797
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019970004968A KR100235542B1 (ko) | 1996-02-29 | 1997-02-19 | 반도체 웨이퍼의 제조방법 |
Country Status (8)
Country | Link |
---|---|
US (1) | US5975990A (ko) |
EP (1) | EP0791444B1 (ko) |
JP (1) | JP2849908B2 (ko) |
KR (1) | KR100235542B1 (ko) |
CN (1) | CN1078518C (ko) |
DE (2) | DE19607695A1 (ko) |
MY (1) | MY112675A (ko) |
TW (1) | TW330167B (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19607695A1 (de) * | 1996-02-29 | 1997-09-04 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung von Halbleiterscheiben |
DE10128630A1 (de) * | 2001-06-13 | 2003-01-02 | Freiberger Compound Mat Gmbh | Vorrichtung und Verfahren zur Bestimmung der Orientierung einer kristallografischen Ebene relativ zu einer Kristalloberfläche sowie Vorrichtung und Verfahren zum Trennen eines Einkristalls in einer Trennmaschine |
CN1310739C (zh) * | 2002-09-06 | 2007-04-18 | 大连淡宁实业发展有限公司 | 钒酸钇单晶片的批量加工工艺 |
US7131891B2 (en) | 2003-04-28 | 2006-11-07 | Micron Technology, Inc. | Systems and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces |
CN106475864B (zh) * | 2016-12-20 | 2018-11-06 | 台山市兰宝磨具有限公司 | 一种磨具端面加工方法和装置 |
CN108789888B (zh) * | 2018-07-23 | 2020-06-09 | 中国工程物理研究院激光聚变研究中心 | 用于x射线显微成像的曲面晶体制备方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4138304A (en) * | 1977-11-03 | 1979-02-06 | General Electric Company | Wafer sawing technique |
US4227348A (en) * | 1978-12-26 | 1980-10-14 | Rca Corporation | Method of slicing a wafer |
JPS57168854A (en) * | 1981-04-05 | 1982-10-18 | Tokyo Seimitsu Co Ltd | Slicing device |
DE3640645A1 (de) * | 1986-11-28 | 1988-06-09 | Wacker Chemitronic | Verfahren zum zersaegen von kristallstaeben oder -bloecken vermittels innenlochsaege in duenne scheiben |
DE3737540C1 (de) * | 1987-11-05 | 1989-06-22 | Mueller Georg Nuernberg | Verfahren und Maschine zum Herstellen von Ronden mit zumindest einer planen Oberflaeche |
US5025593A (en) * | 1988-01-18 | 1991-06-25 | Mazda Motor Corporation | Slicing machine and control method thereof |
DE3906091A1 (de) * | 1989-02-27 | 1990-08-30 | Wacker Chemitronic | Verfahren zum zersaegen von stabfoermigen werkstuecken in scheiben mittels innenlochsaege, sowie innenlochsaegen zu seiner durchfuehrung |
JPH0767692B2 (ja) * | 1989-09-07 | 1995-07-26 | 株式会社東京精密 | スライシングマシンの切断方法 |
US5189843A (en) * | 1990-08-30 | 1993-03-02 | Silicon Technology Corporation | Wafer slicing and grinding machine and a method of slicing and grinding wafers |
JPH05318460A (ja) * | 1992-05-25 | 1993-12-03 | Tokyo Seimitsu Co Ltd | 半導体ウエハのスライシング方法 |
DE19607695A1 (de) * | 1996-02-29 | 1997-09-04 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung von Halbleiterscheiben |
-
1996
- 1996-02-29 DE DE19607695A patent/DE19607695A1/de not_active Withdrawn
- 1996-10-30 MY MYPI96004514A patent/MY112675A/en unknown
- 1996-11-29 CN CN96120864A patent/CN1078518C/zh not_active Expired - Fee Related
- 1996-12-02 US US08/759,023 patent/US5975990A/en not_active Expired - Fee Related
- 1996-12-02 JP JP8321787A patent/JP2849908B2/ja not_active Expired - Fee Related
-
1997
- 1997-02-14 TW TW086101767A patent/TW330167B/zh not_active IP Right Cessation
- 1997-02-19 KR KR1019970004968A patent/KR100235542B1/ko not_active IP Right Cessation
- 1997-02-27 EP EP97103164A patent/EP0791444B1/de not_active Expired - Lifetime
- 1997-02-27 DE DE59700009T patent/DE59700009D1/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2849908B2 (ja) | 1999-01-27 |
DE19607695A1 (de) | 1997-09-04 |
TW330167B (en) | 1998-04-21 |
DE59700009D1 (de) | 1998-09-17 |
KR100235542B1 (ko) | 1999-12-15 |
JPH09246217A (ja) | 1997-09-19 |
EP0791444B1 (de) | 1998-08-12 |
CN1158289A (zh) | 1997-09-03 |
CN1078518C (zh) | 2002-01-30 |
EP0791444A1 (de) | 1997-08-27 |
MY112675A (en) | 2001-07-31 |
US5975990A (en) | 1999-11-02 |
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