KR970054547A - Capacitor Manufacturing Method of Semiconductor Device - Google Patents

Capacitor Manufacturing Method of Semiconductor Device Download PDF

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Publication number
KR970054547A
KR970054547A KR1019950046832A KR19950046832A KR970054547A KR 970054547 A KR970054547 A KR 970054547A KR 1019950046832 A KR1019950046832 A KR 1019950046832A KR 19950046832 A KR19950046832 A KR 19950046832A KR 970054547 A KR970054547 A KR 970054547A
Authority
KR
South Korea
Prior art keywords
electrode
depositing
semiconductor device
capacitor
manufacturing
Prior art date
Application number
KR1019950046832A
Other languages
Korean (ko)
Other versions
KR0166778B1 (en
Inventor
이강열
Original Assignee
문정환
Lg 반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, Lg 반도체 주식회사 filed Critical 문정환
Priority to KR1019950046832A priority Critical patent/KR0166778B1/en
Publication of KR970054547A publication Critical patent/KR970054547A/en
Application granted granted Critical
Publication of KR0166778B1 publication Critical patent/KR0166778B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

본 발명은 반도체 소자의 캐패시터 제조방법에 관한 것으로, 주문형 집적회로(ASIC : Application Specific IC) 공정에서 저전압화 특성을 갖는 캐패시터 제조방법을 제공하기 위한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a capacitor of a semiconductor device, and to provide a method of manufacturing a capacitor having low voltage reduction characteristics in an application specific IC (ASIC) process.

이를 위한 본 발명의 반도체 소자의 캐패시터 제조방법은 절연기판상에 다결정 실리콘과 고융점 금속을 차례로 증착하여 폴리 사이드층을 형성하고 이를 패터닝 하여 제1전극을 형성하는 단계, 제1전극을 포함한 전면에 보호막을 증착한 후 상기 제1전극의 표면이 노출되도록 보호막을 선택적으로 제거하는 단계, 상기 노출된 제1전극의 표면을 포함한 전면에 유전체막을 형성하는 단계, 상기 유전체막상에 금속을 증착하고 패터닝 하여 제2전극을 형성하는 단계를 포함하여 이루어짐을 특징으로 한다.The method of manufacturing a capacitor of a semiconductor device of the present invention for this purpose is to form a polyside layer by sequentially depositing polycrystalline silicon and a high melting point metal on an insulating substrate and patterning it to form a first electrode, the front surface including the first electrode Selectively depositing the protective film to expose the surface of the first electrode after depositing the protective film, forming a dielectric film on the entire surface including the exposed surface of the first electrode, depositing and patterning a metal on the dielectric film And forming a second electrode.

Description

반도체 소자의 캐패시터 제조방법Capacitor Manufacturing Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제4도 (a)∼(c)는 본 발명에 반도체 소자의 캐패시터 제조방법을 나타낸 공정단면도.4 (a) to 4 (c) are process cross-sectional views showing a method for manufacturing a capacitor of a semiconductor device in the present invention.

Claims (2)

절연기판상에 다결정 실리콘과 고융점 금속을 차례로 증착하여 폴리 사이드층을 형성하고 이를 패터닝 하여 제1전극을 형성하는 단계, 제1전극을 포함한 전면에 보호막을 증착한 후 상기 제1전극의 표면이 노출되도록 보호막을 선택적으로 제거하는 단계, 상기 노출된 제1전극의 표면을 포함한 전면에 유전체막을 형성하는 단계, 상기 유전체막상에 금속을 증착하고 패터닝 하여 제2전극을 형성하는 단계를 포함하여 이루어짐을 특징으로 하는 반도체 소자의 캐패시터 제조방법.Forming a poly-side layer by sequentially depositing polycrystalline silicon and a high melting point metal on the insulating substrate and patterning it to form a first electrode, after depositing a protective film on the entire surface including the first electrode and the surface of the first electrode Selectively removing the protective film to be exposed, forming a dielectric film on the entire surface including the exposed surface of the first electrode, and depositing and patterning a metal on the dielectric film to form a second electrode. A method for manufacturing a capacitor of a semiconductor device. 제1항에 있어서, 상기 유전체막은 단일막을 이루어짐을 특징으로 하는 반도체 소자의 캐패시터 제조방법.The method of claim 1, wherein the dielectric film is a single film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950046832A 1995-12-05 1995-12-05 Method for manufacturing a capacitor of semiconductor device KR0166778B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950046832A KR0166778B1 (en) 1995-12-05 1995-12-05 Method for manufacturing a capacitor of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950046832A KR0166778B1 (en) 1995-12-05 1995-12-05 Method for manufacturing a capacitor of semiconductor device

Publications (2)

Publication Number Publication Date
KR970054547A true KR970054547A (en) 1997-07-31
KR0166778B1 KR0166778B1 (en) 1999-01-15

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ID=19437872

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950046832A KR0166778B1 (en) 1995-12-05 1995-12-05 Method for manufacturing a capacitor of semiconductor device

Country Status (1)

Country Link
KR (1) KR0166778B1 (en)

Also Published As

Publication number Publication date
KR0166778B1 (en) 1999-01-15

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