KR970053803A - Method of forming protective film of semiconductor device - Google Patents
Method of forming protective film of semiconductor device Download PDFInfo
- Publication number
- KR970053803A KR970053803A KR1019950046362A KR19950046362A KR970053803A KR 970053803 A KR970053803 A KR 970053803A KR 1019950046362 A KR1019950046362 A KR 1019950046362A KR 19950046362 A KR19950046362 A KR 19950046362A KR 970053803 A KR970053803 A KR 970053803A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- sog
- conductive layer
- semiconductor substrate
- insulating film
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도체소자의 보호막 형성방법에 관한 것으로, 기생커패시턴스를 발생시키는 금속라인들 사이에 저유전물질인 SOG를 채워 기행커패시턴스의 증가를 억제시키므로써 고집적소자 제조에 적합하도록 한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a protective film of a semiconductor device, by filling SOG, which is a low dielectric material, between metal lines generating parasitic capacitance, thereby suppressing an increase in traveling capacitance, thereby making it suitable for high integrated device fabrication.
본 발명에 따른 반도체소자의 보호막 형성방법은 반도체기판을 준비하는 단계; 상기 반도체기판상에 도너층을 형성하는 단계; 상기 도전층을 포함한 반도체기판상에 절연막을 형성하는 단계; 상기 절연막위에 SOG를 중착하는 단계; 상기 도전층 측면에만 남도록 상기 SOG를 선택적으로 제거하는 단계; 상기 도전층 측면에 남아 있는 SOG를 포함한 절연막위에 질화막을 형성하는 단계를 포함하여 이루어진다.A method of forming a protective film of a semiconductor device according to the present invention comprises the steps of preparing a semiconductor substrate; Forming a donor layer on the semiconductor substrate; Forming an insulating film on the semiconductor substrate including the conductive layer; Depositing SOG on the insulating film; Selectively removing the SOG so that only the side of the conductive layer remains; And forming a nitride film on the insulating film including the SOG remaining on the side of the conductive layer.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2c∼2e도는 본 발명에 따른 반도체소자의 보호막형성 공정단면도.2C to 2E are cross-sectional views of a protective film forming process of a semiconductor device according to the present invention.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950046362A KR970053803A (en) | 1995-12-04 | 1995-12-04 | Method of forming protective film of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950046362A KR970053803A (en) | 1995-12-04 | 1995-12-04 | Method of forming protective film of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970053803A true KR970053803A (en) | 1997-07-31 |
Family
ID=66592900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950046362A KR970053803A (en) | 1995-12-04 | 1995-12-04 | Method of forming protective film of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970053803A (en) |
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1995
- 1995-12-04 KR KR1019950046362A patent/KR970053803A/en not_active Application Discontinuation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |