KR970052255A - Contact hole filling method of semiconductor device - Google Patents
Contact hole filling method of semiconductor device Download PDFInfo
- Publication number
- KR970052255A KR970052255A KR1019950050878A KR19950050878A KR970052255A KR 970052255 A KR970052255 A KR 970052255A KR 1019950050878 A KR1019950050878 A KR 1019950050878A KR 19950050878 A KR19950050878 A KR 19950050878A KR 970052255 A KR970052255 A KR 970052255A
- Authority
- KR
- South Korea
- Prior art keywords
- contact hole
- polysilicon film
- semiconductor device
- filling method
- forming
- Prior art date
Links
Abstract
본 발명은 소자 분리 절연막이 형성된 반도체 기판 절연막(4)을 도포하는 단계; 상기 절연막에 콘택홀을 형성하여 상기 반도체 기판의 소정 영역을 노출시키는 단계; 상기 콘택홀에 불순물을 포함하지 않은 제1폴리실리콘막을 증착하는 단계; 불순물을 포함하는 제2폴리실리콘막을 상기 콘택홀 상에 형성된 제1폴리실리콘막 상에 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 콘택홀 매립 방법에 관한 것으로, 콘택홀의 고농도 부분의 확산을 억제하여 펀치 현상을 막아주는 콘택홀 매립 방법을 제공한다.The present invention comprises the steps of applying a semiconductor substrate insulating film (4) formed with a device isolation insulating film; Forming a contact hole in the insulating layer to expose a predetermined region of the semiconductor substrate; Depositing a first polysilicon film containing no impurities in the contact hole; A method of filling a contact hole in a semiconductor device, comprising: forming a second polysilicon film containing impurities on a first polysilicon film formed on the contact hole. It provides a contact hole filling method that suppresses the punch phenomenon.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제4도 내지 제6도는 본 발명에 따른 콘택홀 매립 방법을 설명하는 콘택홀 제조 공정 단면도.4 to 6 are cross-sectional views of a contact hole manufacturing process illustrating a method for filling a contact hole according to the present invention.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950050878A KR970052255A (en) | 1995-12-16 | 1995-12-16 | Contact hole filling method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950050878A KR970052255A (en) | 1995-12-16 | 1995-12-16 | Contact hole filling method of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970052255A true KR970052255A (en) | 1997-07-29 |
Family
ID=66594215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950050878A KR970052255A (en) | 1995-12-16 | 1995-12-16 | Contact hole filling method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970052255A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030001642A (en) * | 2001-06-25 | 2003-01-08 | 주식회사 하이닉스반도체 | Method for forming the contact plug of semiconductor device |
| KR100447107B1 (en) * | 2001-06-29 | 2004-09-04 | 주식회사 하이닉스반도체 | The structure of plug poly silicon layer in semiconductor device |
-
1995
- 1995-12-16 KR KR1019950050878A patent/KR970052255A/en not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030001642A (en) * | 2001-06-25 | 2003-01-08 | 주식회사 하이닉스반도체 | Method for forming the contact plug of semiconductor device |
| KR100447107B1 (en) * | 2001-06-29 | 2004-09-04 | 주식회사 하이닉스반도체 | The structure of plug poly silicon layer in semiconductor device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Withdrawal due to no request for examination |