KR970054494A

KR970054494A - Contact Forming Method of Semiconductor Device

Info

Publication number: KR970054494A
Application number: KR1019950048262A
Authority: KR
Inventors: 한경섭
Original assignee: 구자홍; Lg 전자 주식회사
Priority date: 1995-12-11
Filing date: 1995-12-11
Publication date: 1997-07-31

Abstract

본 발명은 반도체 장치의 콘택형성 방법에 관한 것으로, 과식각으로 인한 금속과 불순물 영역간의 콘택저항불량 및 스텝 커버리지를 개선시킬 수 있도록 한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a contact in a semiconductor device, and to improve contact resistance defects and step coverage between a metal and an impurity region due to overetching.

본 발명에 따른 반도체 장치의 콘택형성 방법은 기판을 준비하는 제1단계; 기판상에 제1반도체층을 형성하는 제2단계; 상기 제1반도체층을 포함한 기판전면에 절연막을 형성하는 제3단계; 상기 절연막중 콘택부위를 선택적으로 제거하여 콘택홀을 형성하는 제4단계; 상기 콘택홀을 포함한 절연막위에 제2반도체층을 형성하는 제5단계; 상기 제2반도체층을 상기 제1반도체층 높이만큼만 남도록 선택적으로 제거하는 제6단계를 포함하여 이루어진다.A method for forming a contact in a semiconductor device according to the present invention includes a first step of preparing a substrate; Forming a first semiconductor layer on the substrate; A third step of forming an insulating film on the entire surface of the substrate including the first semiconductor layer; A fourth step of forming a contact hole by selectively removing a contact portion of the insulating film; A fifth step of forming a second semiconductor layer on the insulating film including the contact hole; And a sixth step of selectively removing the second semiconductor layer so that only the height of the first semiconductor layer remains.

Description

Contact Forming Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3d∼i는 본 발명에 따른 콘택 형성방법의 실시예인 액정표시장치의 제조공정 단면도.3D to i are cross-sectional views of a manufacturing process of a liquid crystal display device, which is an embodiment of a contact forming method according to the present invention.

Claims

A first step of preparing a substrate; Forming a first semiconductor layer on the substrate; A third step of forming an insulating film on the entire surface of the substrate including the first semiconductor layer; A fourth step of forming a contact hole by selectively removing a contact portion of the insulating film; A fifth step of forming a second semiconductor layer on the insulating film including the contact hole; And removing the second semiconductor layer selectively to leave only the height of the first semiconductor layer.

The method of claim 1, wherein the method of selectively removing the second semiconductor layer is performed by using a wet etching method and a dry etching method.

The contact forming method of claim 1, further comprising a seventh step of implanting ions into the contact part after the sixth step if the contact part is an impurity region.

The contact forming method of claim 1, wherein the insulating layer on both sides of the contact hole is etched when the second semiconductor layer is selectively removed.

※ Note: The disclosure is based on the initial application.