KR970054461A - 박막트랜지스터-액정표시소자의 제조방법 - Google Patents

박막트랜지스터-액정표시소자의 제조방법 Download PDF

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KR970054461A
KR970054461A KR1019950051050A KR19950051050A KR970054461A KR 970054461 A KR970054461 A KR 970054461A KR 1019950051050 A KR1019950051050 A KR 1019950051050A KR 19950051050 A KR19950051050 A KR 19950051050A KR 970054461 A KR970054461 A KR 970054461A
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South Korea
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forming
drain
display device
crystal display
liquid crystal
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KR1019950051050A
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English (en)
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KR0176175B1 (ko
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정창오
정철수
서도원
이정길
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김광호
삼성전자 주식회사
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Abstract

신규한 박막트랜지스터-액정표시소자의 제조방법이 개시되어 있다. 탭 집적회로가 본딩되는 패드 부위까지 알루미늄 합금으로 이루어진 게이트를 형성한다. 결과물 상에 액티브 패턴, 소옷/드레인 및 화소패턴을 차례로 형성한다. 결과물 상에 패시베이션층을 형성한 후, 이를 식각하여 게이트 패드, 소오스/드레인 패드 및 화소패턴 부위를 동시에 개구시킨다. 소오스/드레인 형성전의 HF 세정공정 및 화소 ITO 증착공정시 알루미늄 합금이 노출되지 않는다.

Description

박막트랜지스터-액정표시소자의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 내지 제6도는 본 발명에 의한 TFT-LCD 소자의 제조방법을 설명하기 위한 단면도들.

Claims (8)

  1. 탭 집적회로가 본딩되는 패드 부위까지 알루미늄 합금으로 이루어진 게이트를 형성하는 단계; 상기 결과물 상에 액티브 패턴을 형성하는 단계; 상기 결과물 상에 소오스/드레인을 형성하는 단계; 상기 결과물 상에 화소패턴을 형성하는 단계; 상기 결과물 상에 패시베이션층을 형성하는 단계; 및 상기 패시베이션층을 식각하여 게이트 패드, 소오스/드레인 패드 및 화소패턴 부위를 동시에 개구시키는 단계를 구비하는 것을 특징으로 하는 박막트랜지스터-액정표시소자의 제조방법.
  2. 제1항에 있어서, 상기 알루미늄 합금은 알루미늄(Al)과 네오듐(Nd), 지르코늄(Zr), 탄탈륨(Ta), 티타늄(Ti), 크롬(Cr), 몰리브덴(Mo), 실리콘(Si), 텅스텐(W), 니켈(Ni), 및 구리(Cu)의 군에서 선택된 어느 한 원소와의 2원소 합금 또는 3원소 합금인 것을 특징으로 하는 박막트랜지스터-액정표시소자의 제조방법.
  3. 제2항에 있어서, 상기 원소들의 함량은 0.1-10.0 at%인 것을 특징으로 하는 박막트랜지스터-액정표시소자의 제조 방법.
  4. 제1항에 있어서, 상기 액티브 패턴을 형성하는 단계 전에, 상기 탭 집적회로가 접촉되는 패드 부위를 제외한 부분에 양극산화를 실시하는 단계을 더 구비하는 것을 특징으로 하는박막트랜지스터-액정표시소자의 제조방법.
  5. 제1항에 있어서, 상기 액티브 패턴을 형성하는 단계 전에, 상기 알루미늄 합금으로 이루어진 게이트가 형성된 결과물 상에 실리콘산화물로 이루어진 절연막을 형성하는 단계를 더 구비하는 것을 특징으로 하는 박막트랜지스터-액정표시소자의 제조방법.
  6. 제1항에 있어서, 상기 소오스/드레인은 크롬(Cr), 몰리브덴(Mo), 탄탈륨(Ta), 티타늄(Ti), 텅스텐(W) 또는 이들의 합금으로 이루어진 물질로 형성하는 것을 특징으로 하는 박막트랜지스터-액정표시소자의 제조방법.
  7. 제1항에 있어서, 상기 소오스/드레인을 형성하는 단계 전에, HF 세정액을 이용한 세정공정을 실시하는 단계를 더 구비하는 것을 특징으로 하는 박막트랜지스터-액정표시소자의 제조방법.
  8. 제1항에 있어서, 상기 패시베이션층은 실리콘질화물 또는 실리콘산화물 중의 어느 하나로 이루어진 것을 특징으로 하는 박막트랜지스터-액정표시소자의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950051050A 1995-12-16 1995-12-16 박막트랜지스터-액정표시소자의 제조방법 KR0176175B1 (ko)

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KR1019950051050A KR0176175B1 (ko) 1995-12-16 1995-12-16 박막트랜지스터-액정표시소자의 제조방법

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KR1019950051050A KR0176175B1 (ko) 1995-12-16 1995-12-16 박막트랜지스터-액정표시소자의 제조방법

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020067744A (ko) * 2001-02-17 2002-08-24 김동식 박막트랜지스터의 제조방법
KR100421901B1 (ko) * 1998-12-10 2004-04-17 엘지.필립스 엘시디 주식회사 반사형액정표시장치의반사판
KR100483526B1 (ko) * 1997-10-23 2005-09-15 삼성전자주식회사 박막트랜지스터및그제조방법
WO2023103079A1 (zh) * 2021-12-10 2023-06-15 深圳市华星光电半导体显示技术有限公司 显示面板及其制造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100477141B1 (ko) * 1997-09-19 2005-07-04 삼성전자주식회사 금속막과그위에절연층을포함하는반도체장치의제조방법

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100483526B1 (ko) * 1997-10-23 2005-09-15 삼성전자주식회사 박막트랜지스터및그제조방법
KR100421901B1 (ko) * 1998-12-10 2004-04-17 엘지.필립스 엘시디 주식회사 반사형액정표시장치의반사판
KR20020067744A (ko) * 2001-02-17 2002-08-24 김동식 박막트랜지스터의 제조방법
WO2023103079A1 (zh) * 2021-12-10 2023-06-15 深圳市华星光电半导体显示技术有限公司 显示面板及其制造方法

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