KR970053910A - MOS transistor - Google Patents
MOS transistor Download PDFInfo
- Publication number
- KR970053910A KR970053910A KR1019950065966A KR19950065966A KR970053910A KR 970053910 A KR970053910 A KR 970053910A KR 1019950065966 A KR1019950065966 A KR 1019950065966A KR 19950065966 A KR19950065966 A KR 19950065966A KR 970053910 A KR970053910 A KR 970053910A
- Authority
- KR
- South Korea
- Prior art keywords
- gate electrode
- spacer
- mos transistor
- sidewalls
- stacked
- Prior art date
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
샐리사이드 공정으로 제조된 모스 트랜지스터에 대해 기재되어 있다. 이는 다결정 실리콘층과 금속 실리사이드층이 적층된 구조의 게이트 전극, 상기 게이트 전극 측벽에 형성된 제1스페이서, 상기 제1스페이서와 게이트 전극 사이에 형성된 제2스페이서를 구비한다. 따라서, 게이트 전극과 소오스/드레인과의 단락을 방지할 수 있다.A MOS transistor made by the salicide process is described. The gate electrode includes a gate electrode having a structure in which a polycrystalline silicon layer and a metal silicide layer are stacked, a first spacer formed on sidewalls of the gate electrode, and a second spacer formed between the first spacer and the gate electrode. Therefore, a short circuit between the gate electrode and the source / drain can be prevented.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2도는 본 발명의 샐리사이드 공정에 따라 제조된 모스 트랜지스터를 도시한 단면도이다.2 is a cross-sectional view of a MOS transistor manufactured according to the salicide process of the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950065966A KR970053910A (en) | 1995-12-29 | 1995-12-29 | MOS transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950065966A KR970053910A (en) | 1995-12-29 | 1995-12-29 | MOS transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970053910A true KR970053910A (en) | 1997-07-31 |
Family
ID=66622796
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950065966A KR970053910A (en) | 1995-12-29 | 1995-12-29 | MOS transistor |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970053910A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100460074B1 (en) * | 1998-12-11 | 2005-02-02 | 주식회사 하이닉스반도체 | Manufacturing method of semiconductor device |
-
1995
- 1995-12-29 KR KR1019950065966A patent/KR970053910A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100460074B1 (en) * | 1998-12-11 | 2005-02-02 | 주식회사 하이닉스반도체 | Manufacturing method of semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1001467A3 (en) | Semiconductor device and method of manufacturing the same | |
KR850005163A (en) | Manufacturing Method of Field Effect Transistor | |
KR890004444A (en) | MOS transistor | |
EP1152470A3 (en) | Semiconductor device with LDD structure and process of manufacturing the same | |
KR950021529A (en) | Planar structure MOS transistor and manufacturing method thereof | |
KR970053910A (en) | MOS transistor | |
KR850005162A (en) | Field effect transistor | |
KR950021503A (en) | BiCMOS and its Formation Method for Supporting Merged Devices | |
KR970052835A (en) | Transistor Formation Method Using Cobalt Silicide Film | |
KR890005893A (en) | Manufacturing Method of Semiconductor Device | |
KR970054387A (en) | Most transistor manufacturing method | |
KR970053053A (en) | Most transistor manufacturing method | |
KR960015810A (en) | Transistor Manufacturing Method | |
KR970053096A (en) | MOS field effect transistor manufacturing method | |
KR970024156A (en) | Step improvement method between cell area and peripheral circuit area | |
KR970054416A (en) | Manufacturing method of MOS field effect transistor | |
KR910005486A (en) | CMOS transistor and its manufacturing method | |
KR960019611A (en) | Semiconductor device manufacturing method | |
KR900011043A (en) | MOSFET device and manufacturing method | |
KR970052111A (en) | Semiconductor device having multiple well structure and manufacturing method thereof | |
KR920022555A (en) | Manufacturing Method of Semiconductor Device | |
KR970053102A (en) | Manufacturing method of MOS field effect transistor | |
KR970018701A (en) | Method of manufacturing transistor in semiconductor device | |
KR970024260A (en) | Transistors with Oxides Under Channel Region | |
KR940016902A (en) | MOS transistor manufacturing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Withdrawal due to no request for examination |