KR970018701A - Method of manufacturing transistor in semiconductor device - Google Patents
Method of manufacturing transistor in semiconductor device Download PDFInfo
- Publication number
- KR970018701A KR970018701A KR1019950031080A KR19950031080A KR970018701A KR 970018701 A KR970018701 A KR 970018701A KR 1019950031080 A KR1019950031080 A KR 1019950031080A KR 19950031080 A KR19950031080 A KR 19950031080A KR 970018701 A KR970018701 A KR 970018701A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- semiconductor device
- melting point
- high melting
- polysilicon layer
- Prior art date
Links
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
고집적 반도체장치에 있어서, 핫캐리어에 의한 소자 특성의 열화를 방지하는 트랜지스터의 제조방법에 관한 것으로, 반도체장치의 트랜지스터의 제조방법은, 상기 반도체기판 상의 전면에 게이트산화막을 형성하는 단계, 상기 게이트산화막 상에 다결정실리콘층을 도포하고 패터닝하여 개구부를 형성하는 단계, 상기 개구부의 내측벽에 스페이서를 형성하는 단계, 상기 다결정실리콘층을 제거하는 단계, 상기 스페이서들 사이의 반도체기판에 다른 다결정 실리콘층과 고융점실리사이드인 텅스텐실리사이드를 순차적으로 적층하여 게이트전극을 형성하는 단계 및 상기 고융점실리사이드가 형성된 기판전면에 이온주입공정을 실시하여 소오스영역 및 드레인영역을 형성하는 단계를 구비하여, 종래의 방법으로 형성된 트랜지스터에서 문제가 되는 강한 전계에 의한 핫캐리어 생성과 그에 따른 게이트에지(특히 드레인영역부분) 부분의 전자트랩 및 관통현상에 의한 게이트산화막의 열화 및 손상을 효과적으로 방지하여 반도체 소자의 신뢰성을 향상시킨다.In a highly integrated semiconductor device, a method of manufacturing a transistor that prevents deterioration of device characteristics by a hot carrier, the method of manufacturing a transistor of a semiconductor device, the method comprising: forming a gate oxide film on the entire surface of the semiconductor substrate, the gate oxide film Forming an opening by applying and patterning a polysilicon layer on the substrate, forming a spacer on an inner wall of the opening, removing the polysilicon layer, and forming another polycrystalline silicon layer on the semiconductor substrate between the spacers. Forming a gate electrode by sequentially stacking tungsten silicide, which is a high melting point silicide, and forming a source region and a drain region by performing an ion implantation process on the entire surface of the substrate on which the high melting point silicide is formed; Steel problematic in transistors formed To effectively prevent the deterioration and damage of the gate oxide film by the electron traps and through the phenomenon of hot carrier generation, and hence the gate-edge of the electric field (in particular the drain region portion) portion to improve the reliability of the semiconductor device.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제5도는 본 발명에 따른 트랜지스터의 단면도이다.5 is a cross-sectional view of a transistor according to the present invention.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950031080A KR970018701A (en) | 1995-09-21 | 1995-09-21 | Method of manufacturing transistor in semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950031080A KR970018701A (en) | 1995-09-21 | 1995-09-21 | Method of manufacturing transistor in semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970018701A true KR970018701A (en) | 1997-04-30 |
Family
ID=66616183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950031080A KR970018701A (en) | 1995-09-21 | 1995-09-21 | Method of manufacturing transistor in semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970018701A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100470126B1 (en) * | 2002-09-17 | 2005-02-05 | 동부아남반도체 주식회사 | Method for forming gate of semiconductor element |
| KR100461336B1 (en) * | 1997-12-27 | 2005-04-06 | 주식회사 하이닉스반도체 | Manufacturing method of semiconductor device |
-
1995
- 1995-09-21 KR KR1019950031080A patent/KR970018701A/en not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100461336B1 (en) * | 1997-12-27 | 2005-04-06 | 주식회사 하이닉스반도체 | Manufacturing method of semiconductor device |
| KR100470126B1 (en) * | 2002-09-17 | 2005-02-05 | 동부아남반도체 주식회사 | Method for forming gate of semiconductor element |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Withdrawal due to no request for examination |