KR970053102A - Manufacturing method of MOS field effect transistor - Google Patents

Manufacturing method of MOS field effect transistor Download PDF

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Publication number
KR970053102A
KR970053102A KR1019950050482A KR19950050482A KR970053102A KR 970053102 A KR970053102 A KR 970053102A KR 1019950050482 A KR1019950050482 A KR 1019950050482A KR 19950050482 A KR19950050482 A KR 19950050482A KR 970053102 A KR970053102 A KR 970053102A
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KR
South Korea
Prior art keywords
gate
oxide film
nitride film
forming
semiconductor substrate
Prior art date
Application number
KR1019950050482A
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Korean (ko)
Inventor
황정웅
정이선
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to KR1019950050482A priority Critical patent/KR970053102A/en
Publication of KR970053102A publication Critical patent/KR970053102A/en

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Abstract

본 발명은 모스전계효과와 트랜지스터의 제조방법에 관한 것으로, 본 발명은 LDD구조를 갖는 MOSFET의 제조 방법에 있어서, 식각정치층으로 사용되는 티타늄질화막을 형성하고, 상기 티타늄질화막의 상부에 실리콘질화막을 형성하고, 상기 티타늄질화막과 실리콘질화막을 이방성식각하여 게이트산화막과 게이트의 측벽에 스페이서를 형성하므로써, 상기 스페이서 형성시 과도식각에 의하여 반도체기판이 손상되는 것을 방지하고, 상기 반도체기판과 실리콘질화막이 직접 접촉하지 않으므로 열소자에 의한 저항을 감소한다.The present invention relates to a MOS field effect and a method of manufacturing a transistor. The present invention relates to a method of manufacturing a MOSFET having an LDD structure, and to forming a titanium nitride film used as an etch-policy layer, wherein And anisotropically etch the titanium nitride film and the silicon nitride film to form spacers on the sidewalls of the gate oxide film and the gate, thereby preventing the semiconductor substrate from being damaged by the excessive etching during the formation of the spacer, and the semiconductor substrate and the silicon nitride film directly Since there is no contact, the resistance caused by the thermal element is reduced.

Description

모스전계효과 트랜지스터의 제조방법Manufacturing method of MOS field effect transistor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 내지 제2C도는 본 발명의 실시예에 따른 모스전게 효과 트랜지스터의 제조 공정도.2A to 2C are manufacturing process diagrams of a MOS transistor according to an embodiment of the present invention.

Claims (2)

반도체기판의 일정부분에 소자분리막을 형성하는 단게와, 반도체기판의 상부에 게이트산화막을 형성하는 단계와, 상기 게이트산화막의 상부에 폴리실리콘층을 형성한 후, 식각하여 하부에 게이트산화막패턴을 갖는 게이트를 형성하는 단계와, 상기 게이트와 소자분리막을 마스크로 이용하여 저농도이온확산영역을 형성하는 단계와, 상기 게이트와 게이트산화막의 측벽에 티타늄질화막패턴과, 산화막패턴으로 구성된 스페이서를 형성하는 단계를 포함하는 것을 특징으로 하는 모스전계효과 트랜지스터의 제조방법.And forming a gate oxide film on an upper portion of the semiconductor substrate, and forming a polysilicon layer on the gate oxide film, followed by etching to form a gate oxide film pattern on the lower portion of the semiconductor substrate. Forming a gate, forming a low concentration ion diffusion region using the gate and the device isolation film as a mask, and forming a spacer comprising a titanium nitride film pattern and an oxide film pattern on sidewalls of the gate and the gate oxide film. A method for producing a MOS field effect transistor comprising a. 제1항에 있어서, 상기 티타늄질화막패턴은 ㄴ자 모양으로 상기 게이트, 게이트산화막 및 반도체기판에 접하고, 상기 산화막패턴은 스페이서 모양으로 상기 티타늄질화막패턴에 접하는 것을 특징으로 하는 모스전계효과 트랜지스터의 제조방법.The method of claim 1, wherein the titanium nitride film pattern is in contact with the gate, the gate oxide film, and the semiconductor substrate in a letter-shaped shape, and the oxide film pattern is in contact with the titanium nitride film pattern in a spacer shape. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950050482A 1995-12-15 1995-12-15 Manufacturing method of MOS field effect transistor KR970053102A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950050482A KR970053102A (en) 1995-12-15 1995-12-15 Manufacturing method of MOS field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950050482A KR970053102A (en) 1995-12-15 1995-12-15 Manufacturing method of MOS field effect transistor

Publications (1)

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KR970053102A true KR970053102A (en) 1997-07-29

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KR1019950050482A KR970053102A (en) 1995-12-15 1995-12-15 Manufacturing method of MOS field effect transistor

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100469337B1 (en) * 1997-12-20 2005-04-20 주식회사 하이닉스반도체 Transistor manufacturing method of semiconductor device
KR100476666B1 (en) * 1998-08-05 2005-06-08 삼성전자주식회사 Method for manufacturing semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100469337B1 (en) * 1997-12-20 2005-04-20 주식회사 하이닉스반도체 Transistor manufacturing method of semiconductor device
KR100476666B1 (en) * 1998-08-05 2005-06-08 삼성전자주식회사 Method for manufacturing semiconductor device

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