KR970053102A - Manufacturing method of MOS field effect transistor - Google Patents
Manufacturing method of MOS field effect transistor Download PDFInfo
- Publication number
- KR970053102A KR970053102A KR1019950050482A KR19950050482A KR970053102A KR 970053102 A KR970053102 A KR 970053102A KR 1019950050482 A KR1019950050482 A KR 1019950050482A KR 19950050482 A KR19950050482 A KR 19950050482A KR 970053102 A KR970053102 A KR 970053102A
- Authority
- KR
- South Korea
- Prior art keywords
- gate
- oxide film
- nitride film
- forming
- semiconductor substrate
- Prior art date
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
본 발명은 모스전계효과와 트랜지스터의 제조방법에 관한 것으로, 본 발명은 LDD구조를 갖는 MOSFET의 제조 방법에 있어서, 식각정치층으로 사용되는 티타늄질화막을 형성하고, 상기 티타늄질화막의 상부에 실리콘질화막을 형성하고, 상기 티타늄질화막과 실리콘질화막을 이방성식각하여 게이트산화막과 게이트의 측벽에 스페이서를 형성하므로써, 상기 스페이서 형성시 과도식각에 의하여 반도체기판이 손상되는 것을 방지하고, 상기 반도체기판과 실리콘질화막이 직접 접촉하지 않으므로 열소자에 의한 저항을 감소한다.The present invention relates to a MOS field effect and a method of manufacturing a transistor. The present invention relates to a method of manufacturing a MOSFET having an LDD structure, and to forming a titanium nitride film used as an etch-policy layer, wherein And anisotropically etch the titanium nitride film and the silicon nitride film to form spacers on the sidewalls of the gate oxide film and the gate, thereby preventing the semiconductor substrate from being damaged by the excessive etching during the formation of the spacer, and the semiconductor substrate and the silicon nitride film directly Since there is no contact, the resistance caused by the thermal element is reduced.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2A도 내지 제2C도는 본 발명의 실시예에 따른 모스전게 효과 트랜지스터의 제조 공정도.2A to 2C are manufacturing process diagrams of a MOS transistor according to an embodiment of the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950050482A KR970053102A (en) | 1995-12-15 | 1995-12-15 | Manufacturing method of MOS field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950050482A KR970053102A (en) | 1995-12-15 | 1995-12-15 | Manufacturing method of MOS field effect transistor |
Publications (1)
Publication Number | Publication Date |
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KR970053102A true KR970053102A (en) | 1997-07-29 |
Family
ID=66595026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950050482A KR970053102A (en) | 1995-12-15 | 1995-12-15 | Manufacturing method of MOS field effect transistor |
Country Status (1)
Country | Link |
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KR (1) | KR970053102A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100469337B1 (en) * | 1997-12-20 | 2005-04-20 | 주식회사 하이닉스반도체 | Transistor manufacturing method of semiconductor device |
KR100476666B1 (en) * | 1998-08-05 | 2005-06-08 | 삼성전자주식회사 | Method for manufacturing semiconductor device |
-
1995
- 1995-12-15 KR KR1019950050482A patent/KR970053102A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100469337B1 (en) * | 1997-12-20 | 2005-04-20 | 주식회사 하이닉스반도체 | Transistor manufacturing method of semiconductor device |
KR100476666B1 (en) * | 1998-08-05 | 2005-06-08 | 삼성전자주식회사 | Method for manufacturing semiconductor device |
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