KR970046669U - 반도체 제조공정용 가스 분사장치 - Google Patents

반도체 제조공정용 가스 분사장치

Info

Publication number
KR970046669U
KR970046669U KR2019950038649U KR19950038649U KR970046669U KR 970046669 U KR970046669 U KR 970046669U KR 2019950038649 U KR2019950038649 U KR 2019950038649U KR 19950038649 U KR19950038649 U KR 19950038649U KR 970046669 U KR970046669 U KR 970046669U
Authority
KR
South Korea
Prior art keywords
manufacturing process
injection device
gas injection
semiconductor manufacturing
semiconductor
Prior art date
Application number
KR2019950038649U
Other languages
English (en)
Other versions
KR200141176Y1 (ko
Inventor
조병길
Original Assignee
엘지반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지반도체주식회사 filed Critical 엘지반도체주식회사
Priority to KR2019950038649U priority Critical patent/KR200141176Y1/ko
Publication of KR970046669U publication Critical patent/KR970046669U/ko
Application granted granted Critical
Publication of KR200141176Y1 publication Critical patent/KR200141176Y1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
KR2019950038649U 1995-12-06 1995-12-06 반도체 제조공정용 가스 분사장치 KR200141176Y1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019950038649U KR200141176Y1 (ko) 1995-12-06 1995-12-06 반도체 제조공정용 가스 분사장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019950038649U KR200141176Y1 (ko) 1995-12-06 1995-12-06 반도체 제조공정용 가스 분사장치

Publications (2)

Publication Number Publication Date
KR970046669U true KR970046669U (ko) 1997-07-31
KR200141176Y1 KR200141176Y1 (ko) 1999-04-15

Family

ID=19432269

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019950038649U KR200141176Y1 (ko) 1995-12-06 1995-12-06 반도체 제조공정용 가스 분사장치

Country Status (1)

Country Link
KR (1) KR200141176Y1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100920773B1 (ko) * 2007-07-05 2009-10-08 세메스 주식회사 기판 제조 장치

Also Published As

Publication number Publication date
KR200141176Y1 (ko) 1999-04-15

Similar Documents

Publication Publication Date Title
KR960012575A (ko) 반도체 장치 제조 방법
DE59601335D1 (de) Halbleiterbauelement und Herstellverfahren
KR960012574A (ko) 반도체장치 제조방법
FI954241A (fi) Puolijohdelaitteen valmistusmenetelmä
DE69625007T2 (de) Halbleiterelement-Herstellungsverfahren
KR970046669U (ko) 반도체 제조공정용 가스 분사장치
KR960006318U (ko) 반도체 제조용 가스분사장치
KR970046631U (ko) 반도체 디바이스 제조장치의 가스 분사장치
KR970046617U (ko) 반도체 제조공정용 에이치 엠 디 에스 분사장치
KR970025793U (ko) 반도체 제조장비의 가스 공급 장치
KR970019729U (ko) 반도체 소자 제조용 공정 쳄버
KR970015284U (ko) 반도체 소자 제조용 공정 쳄버
KR970010753U (ko) 반도체 제조공정용 포토레지스트 분사장치
KR970046591U (ko) 반도체소자 제조용 개스공급장치
KR970003418A (ko) 고집적 반도체 소자 제조 방법
KR950034349U (ko) 반도체 공정튜브 내로의 가스주입 장치
KR960025304U (ko) 반도체제조용이온주입장치
KR960027786U (ko) 반도체 제조공정용 오존가스 방산장치
KR970025779U (ko) 일정한 가스공급체계를 구비하는 반도체 제조장치
KR960029722U (ko) 반도체 제조장치의 가스 공급장치
KR960027031U (ko) 반도체 제조장비용 공정용액 공급장치
DE69718733T2 (de) Herstellungsverfahren für Halbleiteranordnung
KR970003181U (ko) 반도체 소자 제조용 화학가스 배출장치
KR970015290U (ko) 반도체 장치 제조 장치
KR970046635U (ko) 반도체소자의 제조장치

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
REGI Registration of establishment
FPAY Annual fee payment

Payment date: 20080909

Year of fee payment: 11

LAPS Lapse due to unpaid annual fee