KR950034349U - 반도체 공정튜브 내로의 가스주입 장치 - Google Patents

반도체 공정튜브 내로의 가스주입 장치

Info

Publication number
KR950034349U
KR950034349U KR2019940012330U KR19940012330U KR950034349U KR 950034349 U KR950034349 U KR 950034349U KR 2019940012330 U KR2019940012330 U KR 2019940012330U KR 19940012330 U KR19940012330 U KR 19940012330U KR 950034349 U KR950034349 U KR 950034349U
Authority
KR
South Korea
Prior art keywords
injection device
gas injection
semiconductor process
process tube
tube
Prior art date
Application number
KR2019940012330U
Other languages
English (en)
Other versions
KR0114989Y1 (ko
Inventor
허상범
김용화
Original Assignee
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 현대전자산업 주식회사 filed Critical 현대전자산업 주식회사
Priority to KR2019940012330U priority Critical patent/KR0114989Y1/ko
Publication of KR950034349U publication Critical patent/KR950034349U/ko
Application granted granted Critical
Publication of KR0114989Y1 publication Critical patent/KR0114989Y1/ko

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587Mechanical means for changing the gas flow

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
KR2019940012330U 1994-05-30 1994-05-30 반도체 공정튜브 내로의 가스주입 장치 KR0114989Y1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019940012330U KR0114989Y1 (ko) 1994-05-30 1994-05-30 반도체 공정튜브 내로의 가스주입 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019940012330U KR0114989Y1 (ko) 1994-05-30 1994-05-30 반도체 공정튜브 내로의 가스주입 장치

Publications (2)

Publication Number Publication Date
KR950034349U true KR950034349U (ko) 1995-12-18
KR0114989Y1 KR0114989Y1 (ko) 1998-04-15

Family

ID=19384475

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019940012330U KR0114989Y1 (ko) 1994-05-30 1994-05-30 반도체 공정튜브 내로의 가스주입 장치

Country Status (1)

Country Link
KR (1) KR0114989Y1 (ko)

Also Published As

Publication number Publication date
KR0114989Y1 (ko) 1998-04-15

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