KR980005324U - 반도체 소자 제조용 공정튜브 - Google Patents

반도체 소자 제조용 공정튜브

Info

Publication number
KR980005324U
KR980005324U KR2019960017781U KR19960017781U KR980005324U KR 980005324 U KR980005324 U KR 980005324U KR 2019960017781 U KR2019960017781 U KR 2019960017781U KR 19960017781 U KR19960017781 U KR 19960017781U KR 980005324 U KR980005324 U KR 980005324U
Authority
KR
South Korea
Prior art keywords
semiconductor device
device manufacturing
process tube
tube
manufacturing
Prior art date
Application number
KR2019960017781U
Other languages
English (en)
Other versions
KR200163935Y1 (ko
Inventor
권창헌
Original Assignee
현대전자산업주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 현대전자산업주식회사 filed Critical 현대전자산업주식회사
Priority to KR2019960017781U priority Critical patent/KR200163935Y1/ko
Publication of KR980005324U publication Critical patent/KR980005324U/ko
Application granted granted Critical
Publication of KR200163935Y1 publication Critical patent/KR200163935Y1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
KR2019960017781U 1996-06-27 1996-06-27 반도체 소자 제조용 공정튜브 KR200163935Y1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019960017781U KR200163935Y1 (ko) 1996-06-27 1996-06-27 반도체 소자 제조용 공정튜브

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019960017781U KR200163935Y1 (ko) 1996-06-27 1996-06-27 반도체 소자 제조용 공정튜브

Publications (2)

Publication Number Publication Date
KR980005324U true KR980005324U (ko) 1998-03-30
KR200163935Y1 KR200163935Y1 (ko) 2000-01-15

Family

ID=19459702

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019960017781U KR200163935Y1 (ko) 1996-06-27 1996-06-27 반도체 소자 제조용 공정튜브

Country Status (1)

Country Link
KR (1) KR200163935Y1 (ko)

Also Published As

Publication number Publication date
KR200163935Y1 (ko) 2000-01-15

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