DE69637596D1 - Hochfrequenzhalbleiteranordnung - Google Patents

Hochfrequenzhalbleiteranordnung

Info

Publication number
DE69637596D1
DE69637596D1 DE69637596T DE69637596T DE69637596D1 DE 69637596 D1 DE69637596 D1 DE 69637596D1 DE 69637596 T DE69637596 T DE 69637596T DE 69637596 T DE69637596 T DE 69637596T DE 69637596 D1 DE69637596 D1 DE 69637596D1
Authority
DE
Germany
Prior art keywords
semiconductor device
frequency semiconductor
frequency
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69637596T
Other languages
English (en)
Inventor
Donald L Plumton
Jau-Yuann Yang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69637596D1 publication Critical patent/DE69637596D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66454—Static induction transistors [SIT], e.g. permeable base transistors [PBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
    • H01L29/66924—Unipolar field-effect transistors with a PN junction gate, i.e. JFET with an active layer made of a group 13/15 material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors
DE69637596T 1995-12-29 1996-12-20 Hochfrequenzhalbleiteranordnung Expired - Lifetime DE69637596D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US931795P 1995-12-29 1995-12-29

Publications (1)

Publication Number Publication Date
DE69637596D1 true DE69637596D1 (de) 2008-08-21

Family

ID=21736914

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69637596T Expired - Lifetime DE69637596D1 (de) 1995-12-29 1996-12-20 Hochfrequenzhalbleiteranordnung

Country Status (4)

Country Link
US (1) US5910665A (de)
EP (1) EP0789402A1 (de)
JP (1) JPH09293880A (de)
DE (1) DE69637596D1 (de)

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US6965123B1 (en) 1997-07-29 2005-11-15 Micron Technology, Inc. Transistor with variable electron affinity gate and methods of fabrication and use
US7196929B1 (en) * 1997-07-29 2007-03-27 Micron Technology Inc Method for operating a memory device having an amorphous silicon carbide gate insulator
US7154153B1 (en) 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device
US6794255B1 (en) * 1997-07-29 2004-09-21 Micron Technology, Inc. Carburized silicon gate insulators for integrated circuits
SE9901410D0 (sv) * 1999-04-21 1999-04-21 Abb Research Ltd Abipolar transistor
US6734476B2 (en) 2001-06-14 2004-05-11 Ixys Corporation Semiconductor devices having group III-V compound layers
US7280026B2 (en) 2002-04-18 2007-10-09 Coldwatt, Inc. Extended E matrix integrated magnetics (MIM) core
US6696706B1 (en) * 2002-10-22 2004-02-24 Lovoltech, Inc. Structure and method for a junction field effect transistor with reduced gate capacitance
US7427910B2 (en) * 2004-08-19 2008-09-23 Coldwatt, Inc. Winding structure for efficient switch-mode power converters
US7321283B2 (en) * 2004-08-19 2008-01-22 Coldwatt, Inc. Vertical winding structures for planar magnetic switched-mode power converters
US7417875B2 (en) 2005-02-08 2008-08-26 Coldwatt, Inc. Power converter employing integrated magnetics with a current multiplier rectifier and method of operating the same
US7385375B2 (en) * 2005-02-23 2008-06-10 Coldwatt, Inc. Control circuit for a depletion mode switch and method of operating the same
US7876191B2 (en) 2005-02-23 2011-01-25 Flextronics International Usa, Inc. Power converter employing a tapped inductor and integrated magnetics and method of operating the same
US7176662B2 (en) * 2005-02-23 2007-02-13 Coldwatt, Inc. Power converter employing a tapped inductor and integrated magnetics and method of operating the same
US7439556B2 (en) * 2005-03-29 2008-10-21 Coldwatt, Inc. Substrate driven field-effect transistor
US7439557B2 (en) * 2005-03-29 2008-10-21 Coldwatt, Inc. Semiconductor device having a lateral channel and contacts on opposing surfaces thereof
US7339208B2 (en) 2005-05-13 2008-03-04 Coldwatt, Inc. Semiconductor device having multiple lateral channels and method of forming the same
US7675090B2 (en) * 2005-05-13 2010-03-09 Flextronics International Usa, Inc. Semiconductor device having a contact on a buffer layer thereof and method of forming the same
US20070029573A1 (en) * 2005-08-08 2007-02-08 Lin Cheng Vertical-channel junction field-effect transistors having buried gates and methods of making
US7564074B2 (en) * 2005-08-25 2009-07-21 Flextronics International Usa, Inc. Semiconductor device including a lateral field-effect transistor and Schottky diode
US7285807B2 (en) * 2005-08-25 2007-10-23 Coldwatt, Inc. Semiconductor device having substrate-driven field-effect transistor and Schottky diode and method of forming the same
US7462891B2 (en) * 2005-09-27 2008-12-09 Coldwatt, Inc. Semiconductor device having an interconnect with sloped walls and method of forming the same
US8595041B2 (en) * 2006-02-07 2013-11-26 Sap Ag Task responsibility system
US8415737B2 (en) 2006-06-21 2013-04-09 Flextronics International Usa, Inc. Semiconductor device with a pillar region and method of forming the same
US7541640B2 (en) * 2006-06-21 2009-06-02 Flextronics International Usa, Inc. Vertical field-effect transistor and method of forming the same
US7663183B2 (en) * 2006-06-21 2010-02-16 Flextronics International Usa, Inc. Vertical field-effect transistor and method of forming the same
US8125205B2 (en) 2006-08-31 2012-02-28 Flextronics International Usa, Inc. Power converter employing regulators with a coupled inductor
US7675758B2 (en) * 2006-12-01 2010-03-09 Flextronics International Usa, Inc. Power converter with an adaptive controller and method of operating the same
US7889517B2 (en) 2006-12-01 2011-02-15 Flextronics International Usa, Inc. Power system with power converters having an adaptive controller
US7675759B2 (en) 2006-12-01 2010-03-09 Flextronics International Usa, Inc. Power system with power converters having an adaptive controller
US7667986B2 (en) * 2006-12-01 2010-02-23 Flextronics International Usa, Inc. Power system with power converters having an adaptive controller
US9197132B2 (en) 2006-12-01 2015-11-24 Flextronics International Usa, Inc. Power converter with an adaptive controller and method of operating the same
US7468649B2 (en) 2007-03-14 2008-12-23 Flextronics International Usa, Inc. Isolated power converter
US7906941B2 (en) 2007-06-19 2011-03-15 Flextronics International Usa, Inc. System and method for estimating input power for a power processing circuit
CN102342008B (zh) 2009-01-19 2016-08-03 伟创力国际美国公司 用于功率转换器的控制器
WO2010083511A1 (en) 2009-01-19 2010-07-22 Flextronics International Usa, Inc. Controller for a power converter
US9019061B2 (en) 2009-03-31 2015-04-28 Power Systems Technologies, Ltd. Magnetic device formed with U-shaped core pieces and power converter employing the same
US8643222B2 (en) 2009-06-17 2014-02-04 Power Systems Technologies Ltd Power adapter employing a power reducer
US9077248B2 (en) 2009-06-17 2015-07-07 Power Systems Technologies Ltd Start-up circuit for a power adapter
US8514593B2 (en) 2009-06-17 2013-08-20 Power Systems Technologies, Ltd. Power converter employing a variable switching frequency and a magnetic device with a non-uniform gap
US8638578B2 (en) 2009-08-14 2014-01-28 Power System Technologies, Ltd. Power converter including a charge pump employable in a power adapter
US8976549B2 (en) 2009-12-03 2015-03-10 Power Systems Technologies, Ltd. Startup circuit including first and second Schmitt triggers and power converter employing the same
US8520420B2 (en) 2009-12-18 2013-08-27 Power Systems Technologies, Ltd. Controller for modifying dead time between switches in a power converter
US9246391B2 (en) 2010-01-22 2016-01-26 Power Systems Technologies Ltd. Controller for providing a corrected signal to a sensed peak current through a circuit element of a power converter
US8787043B2 (en) 2010-01-22 2014-07-22 Power Systems Technologies, Ltd. Controller for a power converter and method of operating the same
CN102870320B (zh) 2010-03-17 2016-11-02 电力系统技术有限公司 功率转换器的控制系统及其操作方法
US8792257B2 (en) 2011-03-25 2014-07-29 Power Systems Technologies, Ltd. Power converter with reduced power dissipation
US8792256B2 (en) 2012-01-27 2014-07-29 Power Systems Technologies Ltd. Controller for a switch and method of operating the same
US9190898B2 (en) 2012-07-06 2015-11-17 Power Systems Technologies, Ltd Controller for a power converter and method of operating the same
US9106130B2 (en) 2012-07-16 2015-08-11 Power Systems Technologies, Inc. Magnetic device and power converter employing the same
US9379629B2 (en) 2012-07-16 2016-06-28 Power Systems Technologies, Ltd. Magnetic device and power converter employing the same
US9099232B2 (en) 2012-07-16 2015-08-04 Power Systems Technologies Ltd. Magnetic device and power converter employing the same
US9214264B2 (en) 2012-07-16 2015-12-15 Power Systems Technologies, Ltd. Magnetic device and power converter employing the same
US9240712B2 (en) 2012-12-13 2016-01-19 Power Systems Technologies Ltd. Controller including a common current-sense device for power switches of a power converter
US9300206B2 (en) 2013-11-15 2016-03-29 Power Systems Technologies Ltd. Method for estimating power of a power converter
CN108091575B (zh) * 2017-12-21 2021-02-26 眉山国芯科技有限公司 结型场效应晶体管及其制作方法
US10395988B1 (en) 2018-04-10 2019-08-27 International Business Machines Corporation Vertical FET transistor with reduced source/drain contact resistance

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Also Published As

Publication number Publication date
EP0789402A1 (de) 1997-08-13
US5910665A (en) 1999-06-08
JPH09293880A (ja) 1997-11-11

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