KR970022176A - CBr₄개스를 이용한 반도체 패턴 측면의 에피성장율 조절방법 - Google Patents

CBr₄개스를 이용한 반도체 패턴 측면의 에피성장율 조절방법 Download PDF

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KR970022176A
KR970022176A KR1019950037594A KR19950037594A KR970022176A KR 970022176 A KR970022176 A KR 970022176A KR 1019950037594 A KR1019950037594 A KR 1019950037594A KR 19950037594 A KR19950037594 A KR 19950037594A KR 970022176 A KR970022176 A KR 970022176A
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cbr
semiconductor pattern
gas
raw material
growth rate
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KR1019950037594A
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KR0178303B1 (ko
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민석기
김무성
김성일
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김은영
한국과학기술연구원
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Priority to JP8182573A priority patent/JP2682979B2/ja
Priority to US08/684,721 priority patent/US5865888A/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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Abstract

본 발명은 CBr4개스를 이용한 반도체 패턴 각면의 에퍼섬장율 조절방법에 관한 것으로, 패터닝된 GaAs 기판 위에 유기금속화학증착(MOCVD)법에 의해 에퍼층을 성장시킬 때 CBr4개스를 유입시키므로써 상기 CBr4유입량에 따라 에피층 패턴의 측면 성장율을 조절할 수 있을 뿐 아니라 이로 인해 소자의 평탄화를 기할수 있게 된다.

Description

CBr₄개스를 이용한 반도체 패턴 측면의 에피성장율 조절방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2(가)도 및 제2(나)도는 단일 메사위에 GaAs 에피층을 성장시킬 때 CBr4유입의 효과를 나타내는 에피층 단면의 주사전자현미경 사진을 도시한 것으로,
제2(가)도는 CBr4를 유입하지 않은 경우의 주사전자현미경 사진을 도시한 도면(사진의 스케일 마커는 5㎛), 제2(나)도는 CBr4를 0.023cc/min(농도로 환산시 4.6×10-6) 유입한 경우의 주사전자현미경 사진을 도시할 도면(사진의 스케일 마커는 5㎛).

Claims (5)

  1. 반도체 소자 제조공정에 있어서, 패터닝된 GaAs 기판 위에 유기금속화학중착법에 의해 에피층을 성장시킬 때 CBr4를 유입시켜 CBr4유입량에 따라 에피층의 측면 성장율을 조절하는 것을 특징으로 하는 CBr4개스를 이용한 반도체 패턴 측면의 에피성장율 조절방법.
  2. 제1항에 있어서, 상기 CBr4을 유입하여 에피층을 성장시키는 과정에서 에피층 성장온도 또는 원료 개스인 5족 원료 유입량/3족 원료 유입량의 비를-변화시켜 에피층의 측면 성장유를 조절하는 것을 특징으로 하는 CBr4개스를 이용한 반도체 패턴 측면의 에피성장율 조절방법.
  3. 제1항에 있어서, 상기 패터닝된 GaAs 기판은 장노광법 또는 습식식각법으로 식각처리하여 메사 또는 V 홈 형태로 형성되는 것을 특징으로 하는 CBr4개스를 이용한 반도체 패턴 측면의 에피성장율 조절방법.
  4. 제2항에 있어서, 상기 에피층 성장온도는 600℃ 내지 800℃ 범위내에서 변화시키는 것을 특징으로 하는 CBr4개스를 이용한 반도체 패턴 측면의 에피성장율 조절방법.
  5. 제2항에 있어서, 상기 원료 개스인 5족 원료 유입량/3족 일료 유입량의 비는 5 내지 120 범위내에서 변화시키는 것을 특징으로 하는 CBr4개스를 이용한 반도체 패턴 측면의 에피성장율 조절방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950037594A 1995-10-27 1995-10-27 CBr4 개스를 이용한 반도체 패턴 측면의 에피성장율 조절방법 KR0178303B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019950037594A KR0178303B1 (ko) 1995-10-27 1995-10-27 CBr4 개스를 이용한 반도체 패턴 측면의 에피성장율 조절방법
JP8182573A JP2682979B2 (ja) 1995-10-27 1996-07-12 半導体素子パターン側面に対するＣＢｒ４ガスを用いたエピタキシアル成長率調節方法
US08/684,721 US5865888A (en) 1995-10-27 1996-07-22 Semiconductor device epitaxial layer lateral growth rate control method using CBr4

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Application Number Priority Date Filing Date Title
KR1019950037594A KR0178303B1 (ko) 1995-10-27 1995-10-27 CBr4 개스를 이용한 반도체 패턴 측면의 에피성장율 조절방법

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KR0178303B1 KR0178303B1 (ko) 1999-04-15

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US6891202B2 (en) * 2001-12-14 2005-05-10 Infinera Corporation Oxygen-doped Al-containing current blocking layers in active semiconductor devices
US20060276043A1 (en) * 2003-03-21 2006-12-07 Johnson Mark A L Method and systems for single- or multi-period edge definition lithography
JP6142496B2 (ja) * 2012-10-12 2017-06-07 富士電機株式会社 半導体装置の製造方法
KR102270867B1 (ko) 2017-12-07 2021-07-01 주식회사 엘지에너지솔루션 전극, 그의 제조방법, 전극조립체 및 이차전지

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JPH02260417A (ja) * 1989-03-30 1990-10-23 Mitsubishi Electric Corp 半導体薄膜の結晶成長方法及びその装置
US5168077A (en) * 1989-03-31 1992-12-01 Kabushiki Kaisha Toshiba Method of manufacturing a p-type compound semiconductor thin film containing a iii-group element and a v-group element by metal organics chemical vapor deposition
JP3124209B2 (ja) * 1994-06-30 2001-01-15 シャープ株式会社 化合物半導体結晶層の製造方法
US5656538A (en) * 1995-03-24 1997-08-12 The Board Of Trustees Of The University Of Illinois Halide dopant process for producing semi-insulating group III-V regions for semiconductor devices

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KR0178303B1 (ko) 1999-04-15
JPH09134885A (ja) 1997-05-20
JP2682979B2 (ja) 1997-11-26
US5865888A (en) 1999-02-02

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