KR970018572A - Capacitor Manufacturing Method of Semiconductor Memory Device - Google Patents

Capacitor Manufacturing Method of Semiconductor Memory Device Download PDF

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Publication number
KR970018572A
KR970018572A KR1019950031085A KR19950031085A KR970018572A KR 970018572 A KR970018572 A KR 970018572A KR 1019950031085 A KR1019950031085 A KR 1019950031085A KR 19950031085 A KR19950031085 A KR 19950031085A KR 970018572 A KR970018572 A KR 970018572A
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KR
South Korea
Prior art keywords
insulating layer
storage electrode
layer
memory device
semiconductor memory
Prior art date
Application number
KR1019950031085A
Other languages
Korean (ko)
Inventor
현창석
박형무
정규환
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950031085A priority Critical patent/KR970018572A/en
Publication of KR970018572A publication Critical patent/KR970018572A/en

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Abstract

반도체 메모리장치의 커패시터 제조방법에 개시되어 있다. 반도체기판상에 제1절연층, 식각저지층, 및 제2절연층을 차례로 형성하고, 상기 제2절연층 상에 스토리지 전극 패턴을 형성한 다음, 상기 제2절연층의 일부를 등방성 식각한다. 이어서, 상기 결과물 상에 제2도전층을 형성하고, 상기 결과물을 이방성식각한 다음, 상기 제2절연층을 제거하여 상기 스토리지 전극 패턴 및 제2도전층을 구비하는 스토리지 전극을 형성한다. 따라서 커패시터의 유효면적을 증가시킬 수 있다.Disclosed is a method of manufacturing a capacitor of a semiconductor memory device. A first insulating layer, an etch stop layer, and a second insulating layer are sequentially formed on the semiconductor substrate, a storage electrode pattern is formed on the second insulating layer, and a portion of the second insulating layer is isotropically etched. Subsequently, a second conductive layer is formed on the resultant, the resultant is anisotropically etched, and the second insulating layer is removed to form a storage electrode having the storage electrode pattern and the second conductive layer. Therefore, the effective area of the capacitor can be increased.

Description

반도체 메모리장치의 커패시터 제조방법Capacitor Manufacturing Method of Semiconductor Memory Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제5도는 본 발명의 일 실시예에 따른 커패시터 제조방법을 순서대로 도시한 단면도이다.5 is a cross-sectional view sequentially showing a capacitor manufacturing method according to an embodiment of the present invention.

Claims (3)

반도체기판상에 제1절연층, 식각저지층, 및 제2절연층을 차례로 형성하는 제1단계; 상기 제2절연층 상에 스토리지 전극 패턴을 형성하는 제2단계; 상기 제2절연층의 일부를 등방성 식각하는 제3단계; 상기 결과물 상에 제2도전층을 형성하는 제4단계; 및 상기 결과물을 이방성식각한 다음, 상기 제2절연층을 제거하여 상기 스토리지 전극 패턴 및 제2도전층을 구비하는 스토리지 전극을 형성하는 제5단계를 구비하는 것을 특징으로 하는 반도체 메모리 장치의 커패시터 제조방법.A first step of sequentially forming a first insulating layer, an etch stop layer, and a second insulating layer on the semiconductor substrate; Forming a storage electrode pattern on the second insulating layer; A third step of isotropically etching a portion of the second insulating layer; A fourth step of forming a second conductive layer on the resultant product; And forming a storage electrode having the storage electrode pattern and the second conductive layer by anisotropically etching the resultant, and then removing the second insulating layer. Way. 제1항에 있어서, 제3단계에서의 상기 등방성 식각은 그 식각량을 2000Å~10000Å을 유지하도록 식각하는 것을 특징으로 하는 반도체 메모리 장치의 커패시터 제조방법.The method of claim 1, wherein the isotropic etching in the third step is performed to maintain the etching amount of 2000 ns to 10000 ns. 제1항에 있어서, 상기 식각저지층은 실리콘질화물 또는 다결정실리콘으로 형성되는 것을 특징으로 하는 반도체 메모리 장치의 커패시터 제조방법.The method of claim 1, wherein the etch stop layer is formed of silicon nitride or polycrystalline silicon.
KR1019950031085A 1995-09-21 1995-09-21 Capacitor Manufacturing Method of Semiconductor Memory Device KR970018572A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950031085A KR970018572A (en) 1995-09-21 1995-09-21 Capacitor Manufacturing Method of Semiconductor Memory Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950031085A KR970018572A (en) 1995-09-21 1995-09-21 Capacitor Manufacturing Method of Semiconductor Memory Device

Publications (1)

Publication Number Publication Date
KR970018572A true KR970018572A (en) 1997-04-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950031085A KR970018572A (en) 1995-09-21 1995-09-21 Capacitor Manufacturing Method of Semiconductor Memory Device

Country Status (1)

Country Link
KR (1) KR970018572A (en)

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