KR970013323A - Manufacturing method of MOS field effect transistor - Google Patents
Manufacturing method of MOS field effect transistor Download PDFInfo
- Publication number
- KR970013323A KR970013323A KR1019950026848A KR19950026848A KR970013323A KR 970013323 A KR970013323 A KR 970013323A KR 1019950026848 A KR1019950026848 A KR 1019950026848A KR 19950026848 A KR19950026848 A KR 19950026848A KR 970013323 A KR970013323 A KR 970013323A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- forming
- high concentration
- effect transistor
- field effect
- Prior art date
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Abstract
본 발명은 LDD 구조의 모스전계효과 트랜지스터에 관한 것으로, 게이트 측벽에 산화막스페이서를 형성할 때 노출되는 반도체기판을 식각하여 홈을 형성하고, 고농도의 불순물을 이온주입하고 열처리하여 고농도의 이온이 채널영역을 확산되는 것을 방지하여 충분한 채널길이를 확보하므로써, 소자를 더욱 고집적화하는 모스 전계효과 트랜지스터에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a MOS field effect transistor having an LDD structure, wherein a semiconductor substrate exposed when forming an oxide film spacer on a gate sidewall is etched to form a groove, and a high concentration of ions are implanted and heat treated to implant a high concentration of impurities. The present invention relates to a MOS field effect transistor that makes the device more highly integrated by preventing the diffusion of light into the semiconductor layer and securing a sufficient channel length.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제7도는 본 발명의 실시예에 따라 LDD MOSFET를 제조하는 단계를 도시한 단면도.7 is a cross-sectional view illustrating steps of manufacturing an LDD MOSFET in accordance with an embodiment of the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950026848A KR970013323A (en) | 1995-08-28 | 1995-08-28 | Manufacturing method of MOS field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950026848A KR970013323A (en) | 1995-08-28 | 1995-08-28 | Manufacturing method of MOS field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970013323A true KR970013323A (en) | 1997-03-29 |
Family
ID=66595631
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950026848A KR970013323A (en) | 1995-08-28 | 1995-08-28 | Manufacturing method of MOS field effect transistor |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970013323A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100790264B1 (en) * | 2006-08-07 | 2008-01-02 | 동부일렉트로닉스 주식회사 | Semiconductor device and method for fabricating the same |
-
1995
- 1995-08-28 KR KR1019950026848A patent/KR970013323A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100790264B1 (en) * | 2006-08-07 | 2008-01-02 | 동부일렉트로닉스 주식회사 | Semiconductor device and method for fabricating the same |
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |