KR970013323A - Manufacturing method of MOS field effect transistor - Google Patents

Manufacturing method of MOS field effect transistor Download PDF

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Publication number
KR970013323A
KR970013323A KR1019950026848A KR19950026848A KR970013323A KR 970013323 A KR970013323 A KR 970013323A KR 1019950026848 A KR1019950026848 A KR 1019950026848A KR 19950026848 A KR19950026848 A KR 19950026848A KR 970013323 A KR970013323 A KR 970013323A
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KR
South Korea
Prior art keywords
oxide film
forming
high concentration
effect transistor
field effect
Prior art date
Application number
KR1019950026848A
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Korean (ko)
Inventor
이석규
Original Assignee
김주용
현대전자산업주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업주식회사 filed Critical 김주용
Priority to KR1019950026848A priority Critical patent/KR970013323A/en
Publication of KR970013323A publication Critical patent/KR970013323A/en

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Abstract

본 발명은 LDD 구조의 모스전계효과 트랜지스터에 관한 것으로, 게이트 측벽에 산화막스페이서를 형성할 때 노출되는 반도체기판을 식각하여 홈을 형성하고, 고농도의 불순물을 이온주입하고 열처리하여 고농도의 이온이 채널영역을 확산되는 것을 방지하여 충분한 채널길이를 확보하므로써, 소자를 더욱 고집적화하는 모스 전계효과 트랜지스터에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a MOS field effect transistor having an LDD structure, wherein a semiconductor substrate exposed when forming an oxide film spacer on a gate sidewall is etched to form a groove, and a high concentration of ions are implanted and heat treated to implant a high concentration of impurities. The present invention relates to a MOS field effect transistor that makes the device more highly integrated by preventing the diffusion of light into the semiconductor layer and securing a sufficient channel length.

Description

모스전계효과 트랜지스터의 제조방법Manufacturing method of MOS field effect transistor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제7도는 본 발명의 실시예에 따라 LDD MOSFET를 제조하는 단계를 도시한 단면도.7 is a cross-sectional view illustrating steps of manufacturing an LDD MOSFET in accordance with an embodiment of the present invention.

Claims (2)

모스전계효과 트랜지스터의 제조방법에 있어서, 반도체기판의 상부에 필드산화막을 형성하고, 게이트산화막과 게이트를 차례로 형성하는 단계와, 상기 게이트와 노출된 반도체기판에 산화막을 형성하고, 저농도의 이온을 주입하여 저농도이온영역을 형성하는 단계와, 전체 구조 상부에 산화막을 저온 증착방법에 의해 산화하고, 상기 산화막은 에치백하여 상기 게이트의 측벽에 산화막스페이서를 형성하는 단계와, 노출된 반도체기판을 식각하여 홈을 형성하는 단계와, 식각된 반도체기판과 게이트의 표면에 마스크산화막을 형성하고, 고농도의 불순물을 이온주입하여 고농도이온영역을 형성하는 단계와, 열처리공정으로 상기 저농도이온과 고농도이온을 확산시켜 소오스/드레인을 형성하는 단계를 포함하는 것을 특징으로 하는 모스전계효과 트랜지스터의 제조방법.A method of manufacturing a MOS field effect transistor, comprising: forming a field oxide film on an upper surface of a semiconductor substrate, sequentially forming a gate oxide film and a gate, forming an oxide film on the gate and the exposed semiconductor substrate, and implanting a low concentration of ions; Forming a low concentration ion region, oxidizing an oxide film on the whole structure by a low temperature deposition method, etching the oxide film to form an oxide film spacer on the sidewall of the gate, and etching the exposed semiconductor substrate. Forming a groove, forming a mask oxide film on the surface of the etched semiconductor substrate and the gate, implanting impurities at a high concentration to form a high concentration ion region, and diffusing the low and high concentration ions by a heat treatment process. Moss field effect transistor comprising forming a source / drain The method of the requester. 제1항에 있어서, 상기 홈의 깊이는 고농도 불순물을 이온주입하고 열처리하여 형성되는 고농도의 확산영역이 저농도의 확산영역과 연결될 정도인 것을 특징으로 하는 모스전계효과 트랜지스터의 제조방법.The method of claim 1, wherein the depth of the groove is such that a high concentration diffusion region formed by ion implantation and heat treatment of a high concentration impurity is connected with a low concentration diffusion region.
KR1019950026848A 1995-08-28 1995-08-28 Manufacturing method of MOS field effect transistor KR970013323A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950026848A KR970013323A (en) 1995-08-28 1995-08-28 Manufacturing method of MOS field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950026848A KR970013323A (en) 1995-08-28 1995-08-28 Manufacturing method of MOS field effect transistor

Publications (1)

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KR970013323A true KR970013323A (en) 1997-03-29

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KR1019950026848A KR970013323A (en) 1995-08-28 1995-08-28 Manufacturing method of MOS field effect transistor

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100790264B1 (en) * 2006-08-07 2008-01-02 동부일렉트로닉스 주식회사 Semiconductor device and method for fabricating the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100790264B1 (en) * 2006-08-07 2008-01-02 동부일렉트로닉스 주식회사 Semiconductor device and method for fabricating the same

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