KR960026554A - Semiconductor device manufacturing method - Google Patents
Semiconductor device manufacturing method Download PDFInfo
- Publication number
- KR960026554A KR960026554A KR1019940035151A KR19940035151A KR960026554A KR 960026554 A KR960026554 A KR 960026554A KR 1019940035151 A KR1019940035151 A KR 1019940035151A KR 19940035151 A KR19940035151 A KR 19940035151A KR 960026554 A KR960026554 A KR 960026554A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor substrate
- semiconductor device
- channel stop
- forming
- manufacturing
- Prior art date
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Abstract
본 발명은 고집적 반도체소자 제조방법에 관한 것으로, 특히 채널스톱 임플란트를 반도체기판으로 O2 +이온영역과 채널스톱 임플란트를 이온주입하여 반도체기판에 O2 +이온영역과 채널스톱 임플란트 영역을 형성하여 소자격리 기능을 하도록 하는 기술로 넓은 면적의 액티브영역을 얻을 수 있으며 소자분리산화막을 형성하지 않음으로 인하여 토폴로지에 의한 영향을 배재할 수 있다.The present invention relates to a method for fabricating a highly integrated semiconductor device, and in particular, an O 2 + ion region and a channel stop implant are implanted into a semiconductor substrate using a channel stop implant to form an O 2 + ion region and a channel stop implant region on a semiconductor substrate. It is possible to obtain the active area of a large area through isolation technology and to exclude the influence of topology by not forming the device isolation oxide film.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제4도 내지 제6도는 본 발명의 실시예에 의해 반도체소자의 소자분리 기능을 갖는 채널스톱 임플란트 영역을 형성하는 단계를 도시한 단면도.4 to 6 are cross-sectional views showing the step of forming a channel stop implant region having a device isolation function of a semiconductor device according to an embodiment of the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940035151A KR960026554A (en) | 1994-12-19 | 1994-12-19 | Semiconductor device manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940035151A KR960026554A (en) | 1994-12-19 | 1994-12-19 | Semiconductor device manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960026554A true KR960026554A (en) | 1996-07-22 |
Family
ID=66688638
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940035151A KR960026554A (en) | 1994-12-19 | 1994-12-19 | Semiconductor device manufacturing method |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960026554A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100382556B1 (en) * | 2001-06-27 | 2003-05-09 | 주식회사 하이닉스반도체 | Method for manufacturing isolation of semiconductor device |
-
1994
- 1994-12-19 KR KR1019940035151A patent/KR960026554A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100382556B1 (en) * | 2001-06-27 | 2003-05-09 | 주식회사 하이닉스반도체 | Method for manufacturing isolation of semiconductor device |
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