KR970010265B1 - Ecr 플라즈마 가공방법 - Google Patents

Ecr 플라즈마 가공방법 Download PDF

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Publication number
KR970010265B1
KR970010265B1 KR1019930020938A KR930020938A KR970010265B1 KR 970010265 B1 KR970010265 B1 KR 970010265B1 KR 1019930020938 A KR1019930020938 A KR 1019930020938A KR 930020938 A KR930020938 A KR 930020938A KR 970010265 B1 KR970010265 B1 KR 970010265B1
Authority
KR
South Korea
Prior art keywords
magnetic field
pulse voltage
parallel
plasma processing
processing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019930020938A
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English (en)
Korean (ko)
Other versions
KR940008817A (ko
Inventor
카즈오 오오바
요시노리 시마
아끼라 오오바
Original Assignee
사카에 덴시 고오교오 가부시끼가이샤
오오바 히로시
카즈오 오오바
요시노리 시마
아끼라 오오바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 사카에 덴시 고오교오 가부시끼가이샤, 오오바 히로시, 카즈오 오오바, 요시노리 시마, 아끼라 오오바 filed Critical 사카에 덴시 고오교오 가부시끼가이샤
Publication of KR940008817A publication Critical patent/KR940008817A/ko
Application granted granted Critical
Publication of KR970010265B1 publication Critical patent/KR970010265B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • ing And Chemical Polishing (AREA)
  • Plasma Technology (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Drying Of Semiconductors (AREA)
KR1019930020938A 1992-10-09 1993-10-09 Ecr 플라즈마 가공방법 Expired - Fee Related KR970010265B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4272046A JP2693899B2 (ja) 1992-10-09 1992-10-09 Ｅｃｒプラズマ加工方法
JP92-272046 1992-10-09

Publications (2)

Publication Number Publication Date
KR940008817A KR940008817A (ko) 1994-05-16
KR970010265B1 true KR970010265B1 (ko) 1997-06-23

Family

ID=17508359

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930020938A Expired - Fee Related KR970010265B1 (ko) 1992-10-09 1993-10-09 Ecr 플라즈마 가공방법

Country Status (5)

Country Link
US (1) US5370779A (enrdf_load_stackoverflow)
EP (1) EP0592129A1 (enrdf_load_stackoverflow)
JP (1) JP2693899B2 (enrdf_load_stackoverflow)
KR (1) KR970010265B1 (enrdf_load_stackoverflow)
TW (1) TW245877B (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3365067B2 (ja) * 1994-02-10 2003-01-08 ソニー株式会社 プラズマ装置およびこれを用いたプラズマ処理方法
WO1997011207A1 (fr) * 1995-09-18 1997-03-27 Hitachi, Ltd. Procede d'attaque a sec
JP3599564B2 (ja) * 1998-06-25 2004-12-08 東京エレクトロン株式会社 イオン流形成方法及び装置
US6054390A (en) * 1997-11-05 2000-04-25 Chartered Semiconductor Manufacturing Ltd. Grazing incident angle processing method for microelectronics layer fabrication
US6566272B2 (en) 1999-07-23 2003-05-20 Applied Materials Inc. Method for providing pulsed plasma during a portion of a semiconductor wafer process
KR100782579B1 (ko) * 2006-09-26 2007-12-06 가부시키가이샤 나노빔 Ｅｃｒ 이온소스
US7772571B2 (en) 2007-10-08 2010-08-10 Advanced Ion Beam Technology, Inc. Implant beam utilization in an ion implanter
HK1246570B (zh) * 2015-05-26 2020-01-03 安塔亚科技公司 具有超导颤振线圈和非磁性增强件的等时性回旋加速器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2580427B1 (fr) * 1985-04-11 1987-05-15 Commissariat Energie Atomique Source d'ions negatifs a resonance cyclotronique des electrons
DE3729347A1 (de) * 1986-09-05 1988-03-17 Mitsubishi Electric Corp Plasmaprozessor
US4778561A (en) * 1987-10-30 1988-10-18 Veeco Instruments, Inc. Electron cyclotron resonance plasma source
JPH01243359A (ja) * 1988-03-25 1989-09-28 Matsushita Electric Ind Co Ltd プラズマドーピング方法
KR930004713B1 (ko) * 1990-06-18 1993-06-03 삼성전자 주식회사 변조방식을 이용한 플라즈마 발생장치 및 방법
US5208512A (en) * 1990-10-16 1993-05-04 International Business Machines Corporation Scanned electron cyclotron resonance plasma source
JPH0521392A (ja) * 1991-07-17 1993-01-29 Fuji Electric Co Ltd プラズマ加工装置

Also Published As

Publication number Publication date
KR940008817A (ko) 1994-05-16
US5370779A (en) 1994-12-06
TW245877B (enrdf_load_stackoverflow) 1995-04-21
JPH06124797A (ja) 1994-05-06
EP0592129A1 (en) 1994-04-13
JP2693899B2 (ja) 1997-12-24

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