KR970008629A - 고체 촬상소자 - Google Patents

고체 촬상소자 Download PDF

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Publication number
KR970008629A
KR970008629A KR1019950021148A KR19950021148A KR970008629A KR 970008629 A KR970008629 A KR 970008629A KR 1019950021148 A KR1019950021148 A KR 1019950021148A KR 19950021148 A KR19950021148 A KR 19950021148A KR 970008629 A KR970008629 A KR 970008629A
Authority
KR
South Korea
Prior art keywords
state image
region
solid
channel stop
junction depth
Prior art date
Application number
KR1019950021148A
Other languages
English (en)
Other versions
KR0156166B1 (ko
Inventor
권경국
Original Assignee
문정환
Lg 반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, Lg 반도체 주식회사 filed Critical 문정환
Priority to KR1019950021148A priority Critical patent/KR0156166B1/ko
Publication of KR970008629A publication Critical patent/KR970008629A/ko
Application granted granted Critical
Publication of KR0156166B1 publication Critical patent/KR0156166B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

본 발명은 고체촬상소자에 관한 것으로, 높은 화소밀도를 갖는 CCD의 블루밍특성과 전하이송효율 특성을 향상시키기 위한CCD구조에 관한 것이다.
본 발명은 서로 인접한 포토다이오드영역간을 격리시키기 위한 제1채널스톱영역이 제1접합길이를 가지고 형성되고, 포토다이오드영역과 이에 인접한 BCCD 영역을 격리시키기 위한 제2채널스톱영역이 상기 제1접합깊이보다 얕은 제2접합깊이를가지고 형성된 구조로 된 고체촬상소자를 제공한다.

Description

고체촬상소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 의한 CCD구조도.

Claims (1)

  1. 서로 인접한 포토다이오드영역간을 격리시키기 위한 제1채널스톱영역이 제1접합깊이를 가지고 형성되고,포토다이오드영역과 이에 인접한 BCCD영역을 격리시키기 위한 제2채널스톱영역이 상기 제1접합깊이보다 얕은 제2접합깊이를 가지고 형성된 것을 특징으로 하는 고체촬상소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950021148A 1995-07-19 1995-07-19 고체촬상소자 KR0156166B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950021148A KR0156166B1 (ko) 1995-07-19 1995-07-19 고체촬상소자

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950021148A KR0156166B1 (ko) 1995-07-19 1995-07-19 고체촬상소자

Publications (2)

Publication Number Publication Date
KR970008629A true KR970008629A (ko) 1997-02-24
KR0156166B1 KR0156166B1 (ko) 1998-10-15

Family

ID=19420898

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950021148A KR0156166B1 (ko) 1995-07-19 1995-07-19 고체촬상소자

Country Status (1)

Country Link
KR (1) KR0156166B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100468611B1 (ko) * 2001-12-24 2005-01-31 매그나칩 반도체 유한회사 암신호 감소를 위한 이미지센서 제조 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100468611B1 (ko) * 2001-12-24 2005-01-31 매그나칩 반도체 유한회사 암신호 감소를 위한 이미지센서 제조 방법

Also Published As

Publication number Publication date
KR0156166B1 (ko) 1998-10-15

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