KR970005687B1 - Semiconductor wafer - Google Patents

Semiconductor wafer Download PDF

Info

Publication number
KR970005687B1
KR970005687B1 KR92024084A KR920024084A KR970005687B1 KR 970005687 B1 KR970005687 B1 KR 970005687B1 KR 92024084 A KR92024084 A KR 92024084A KR 920024084 A KR920024084 A KR 920024084A KR 970005687 B1 KR970005687 B1 KR 970005687B1
Authority
KR
South Korea
Prior art keywords
semiconductor wafer
wafer
semiconductor
Prior art date
Application number
KR92024084A
Other languages
English (en)
Inventor
Kiyoshi Natsume
Original Assignee
Yamaha Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yamaha Corp filed Critical Yamaha Corp
Application granted granted Critical
Publication of KR970005687B1 publication Critical patent/KR970005687B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Automation & Control Theory (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Dicing (AREA)
KR92024084A 1991-12-13 1992-12-12 Semiconductor wafer KR970005687B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3330933A JPH0621188A (ja) 1991-12-13 1991-12-13 半導体ウェハ

Publications (1)

Publication Number Publication Date
KR970005687B1 true KR970005687B1 (en) 1997-04-18

Family

ID=18238061

Family Applications (1)

Application Number Title Priority Date Filing Date
KR92024084A KR970005687B1 (en) 1991-12-13 1992-12-12 Semiconductor wafer

Country Status (3)

Country Link
US (1) US5477062A (ko)
JP (1) JPH0621188A (ko)
KR (1) KR970005687B1 (ko)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3157715B2 (ja) * 1996-05-30 2001-04-16 山形日本電気株式会社 半導体集積回路
KR100223924B1 (ko) * 1996-07-19 1999-10-15 구본준 전극의 라인폭을 측정하기 위한 테스트패턴
US6127245A (en) * 1997-02-04 2000-10-03 Micron Technology, Inc. Grinding technique for integrated circuits
JP3239806B2 (ja) * 1997-06-26 2001-12-17 株式会社村田製作所 電子部品の製造方法
US6022791A (en) * 1997-10-15 2000-02-08 International Business Machines Corporation Chip crack stop
KR100283030B1 (ko) * 1997-12-31 2001-03-02 윤종용 반도체 장치의 레이 아웃 구조
JP2000036523A (ja) 1998-07-17 2000-02-02 Mitsubishi Electric Corp マルチテスト回路を備える半導体ウェハおよびマルチテスト工程を含む半導体装置の製造方法
JP2001135597A (ja) * 1999-08-26 2001-05-18 Fujitsu Ltd 半導体装置の製造方法
US6194739B1 (en) * 1999-11-23 2001-02-27 Lucent Technologies Inc. Inline ground-signal-ground (GSG) RF tester
JP3339485B2 (ja) * 2000-01-24 2002-10-28 日本電気株式会社 半導体装置
JP3726711B2 (ja) * 2001-05-31 2005-12-14 セイコーエプソン株式会社 半導体装置
JP2002373869A (ja) * 2001-06-13 2002-12-26 Mitsubishi Electric Corp 半導体チップ、シリコンウェハ、及び、半導体チップの製造方法
JP2003023138A (ja) * 2001-07-10 2003-01-24 Toshiba Corp メモリチップ及びこれを用いたｃｏｃデバイス、並びに、これらの製造方法
US7259043B2 (en) * 2002-05-14 2007-08-21 Texas Instruments Incorporated Circular test pads on scribe street area
KR100466984B1 (ko) * 2002-05-15 2005-01-24 삼성전자주식회사 테스트 소자 그룹 회로를 포함하는 집적 회로 칩 및 그것의 테스트 방법
US7412639B2 (en) * 2002-05-24 2008-08-12 Verigy (Singapore) Pte. Ltd. System and method for testing circuitry on a wafer
US6940108B2 (en) * 2002-12-05 2005-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Slot design for metal interconnects
US20050230005A1 (en) * 2003-06-25 2005-10-20 Taiwan Semiconductor Manufacturing Co., Ltd. Test pad for reducing die sawing damage
US20040262762A1 (en) * 2003-06-25 2004-12-30 Ming-Shuoh Liang Method of providing via in a multilayer semiconductor device
FR2875624A1 (fr) * 2004-09-23 2006-03-24 St Microelectronics Sa Generation deterministe d'un numero d'identifiant d'un circuit integre
JP4288229B2 (ja) * 2004-12-24 2009-07-01 パナソニック株式会社 半導体チップの製造方法
WO2007061124A1 (en) * 2005-11-24 2007-05-31 Ricoh Company, Ltd. Semiconductor wafer including semiconductor chips divided by scribe line and process-monitor electrode pads formed on scribe line
JP2006203215A (ja) * 2006-01-23 2006-08-03 Renesas Technology Corp 半導体集積回路装置およびその製造方法
US7387950B1 (en) * 2006-12-17 2008-06-17 United Microelectronics Corp. Method for forming a metal structure
US20080246031A1 (en) * 2007-04-09 2008-10-09 Hao-Yi Tsai PCM pad design for peeling prevention
US20090250698A1 (en) * 2008-04-08 2009-10-08 Nagaraj Savithri Fabrication management system
US8017942B2 (en) * 2008-11-25 2011-09-13 Infineon Technologies Ag Semiconductor device and method
JP2010278141A (ja) * 2009-05-27 2010-12-09 Renesas Electronics Corp 半導体装置及び半導体装置の検査方法
JP2010034595A (ja) * 2009-11-12 2010-02-12 Renesas Technology Corp 半導体集積回路装置およびその製造方法
KR101094945B1 (ko) * 2009-12-28 2011-12-15 주식회사 하이닉스반도체 반도체 장치 및 이의 프로브 테스트 방법
JP5976055B2 (ja) * 2014-08-21 2016-08-23 力晶科技股▲ふん▼有限公司 半導体ウエハ、半導体チップ及び半導体装置とそれらの製造方法
US20180190549A1 (en) * 2016-12-30 2018-07-05 John Jude O'Donnell Semiconductor wafer with scribe line conductor and associated method
KR20200108200A (ko) * 2019-03-08 2020-09-17 삼성디스플레이 주식회사 표시 셀, 이의 제조 방법 및 이에 의해 제조된 표시 장치
CN116338262B (zh) * 2023-03-30 2023-12-12 胜科纳米(苏州)股份有限公司 一种测试盘及芯片失效分析测试的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5422263A (en) * 1978-07-18 1979-02-20 Abaranshie Ltd Adjustable table
JPS61166057A (ja) * 1985-01-17 1986-07-26 Matsushita Electronics Corp 半導体装置
US4695868A (en) * 1985-12-13 1987-09-22 Rca Corporation Patterned metallization for integrated circuits
US4835592A (en) * 1986-03-05 1989-05-30 Ixys Corporation Semiconductor wafer with dice having briding metal structure and method of manufacturing same
JP2652015B2 (ja) * 1987-04-07 1997-09-10 セイコーエプソン株式会社 半導体装置
US5003374A (en) * 1988-05-23 1991-03-26 North American Philips Corporation Semiconductor wafer
US5096855A (en) * 1988-05-23 1992-03-17 U.S. Philips Corporation Method of dicing semiconductor wafers which produces shards less than 10 microns in size
JPH0350732A (ja) * 1989-07-18 1991-03-05 Seiko Epson Corp 半導体装置
JPH03268441A (ja) * 1990-03-19 1991-11-29 Nippon Precision Circuits Kk 半導体集積回路基板
US5206181A (en) * 1991-06-03 1993-04-27 Motorola, Inc. Method for manufacturing a semiconductor device with a slotted metal test pad to prevent lift-off during wafer scribing

Also Published As

Publication number Publication date
US5477062A (en) 1995-12-19
JPH0621188A (ja) 1994-01-28

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