KR970004070B1 - 불휘발성 반도체메모리장치 - Google Patents

불휘발성 반도체메모리장치 Download PDF

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Publication number
KR970004070B1
KR970004070B1 KR1019890008872A KR890008872A KR970004070B1 KR 970004070 B1 KR970004070 B1 KR 970004070B1 KR 1019890008872 A KR1019890008872 A KR 1019890008872A KR 890008872 A KR890008872 A KR 890008872A KR 970004070 B1 KR970004070 B1 KR 970004070B1
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KR
South Korea
Prior art keywords
voltage
level
potential
memory cell
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019890008872A
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English (en)
Korean (ko)
Other versions
KR910001783A (ko
Inventor
마사키 모모도미
야스오 이토
요시히사 이와타
후지오 마스오카
마사히코 치바
Original Assignee
가부시키가이샤 도시바
아오이 죠이치
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바, 아오이 죠이치 filed Critical 가부시키가이샤 도시바
Publication of KR910001783A publication Critical patent/KR910001783A/ko
Application granted granted Critical
Publication of KR970004070B1 publication Critical patent/KR970004070B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits

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  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1019890008872A 1988-06-27 1989-06-27 불휘발성 반도체메모리장치 Expired - Fee Related KR970004070B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15687588A JP2728679B2 (ja) 1988-06-27 1988-06-27 不揮発性半導体メモリ装置
JP63-156875 1988-06-27

Publications (2)

Publication Number Publication Date
KR910001783A KR910001783A (ko) 1991-01-31
KR970004070B1 true KR970004070B1 (ko) 1997-03-24

Family

ID=15637301

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890008872A Expired - Fee Related KR970004070B1 (ko) 1988-06-27 1989-06-27 불휘발성 반도체메모리장치

Country Status (4)

Country Link
US (1) US5400279A (enExample)
JP (1) JP2728679B2 (enExample)
KR (1) KR970004070B1 (enExample)
FR (1) FR2633433A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7368778B2 (en) 2004-09-09 2008-05-06 Samsung Electronics Co., Ltd. DRAM having at least three layered impurity regions between channel holes and method of fabricating same
US7521348B2 (en) 2006-10-23 2009-04-21 Samsung Electronics Co., Ltd. Method of fabricating semiconductor device having fine contact holes

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950015768A (ko) * 1993-11-17 1995-06-17 김광호 불휘발성 반도체 메모리 장치의 배선단락 검출회로 및 그 방법
FR2724483B1 (fr) * 1994-09-12 1996-12-27 Sgs Thomson Microelectronics Procede de decodage d'adresse dans une memoire en circuit integre et circuit memoire mettant en oeuvre le procede
US5537362A (en) * 1994-12-06 1996-07-16 National Semiconductor Corporation Low-voltage EEPROM using charge-pumped word lines
JP2910644B2 (ja) * 1995-10-31 1999-06-23 日本電気株式会社 半導体記憶装置
KR100210846B1 (ko) * 1996-06-07 1999-07-15 구본준 낸드셀 어레이
US5844840A (en) * 1997-08-19 1998-12-01 Advanced Micro Devices, Inc. High voltage NMOS pass gate having supply range, area, and speed advantages
US5999459A (en) * 1998-05-27 1999-12-07 Winbond Electronics Corporation High-performance pass-gate isolation circuitry
JP3983940B2 (ja) * 1999-06-28 2007-09-26 東芝マイクロエレクトロニクス株式会社 不揮発性半導体メモリ
US6258668B1 (en) * 1999-11-24 2001-07-10 Aplus Flash Technology, Inc. Array architecture and process flow of nonvolatile memory devices for mass storage applications
US6891768B2 (en) * 2002-11-13 2005-05-10 Hewlett-Packard Development Company, L.P. Power-saving reading of magnetic memory devices
US7978515B2 (en) * 2007-03-23 2011-07-12 Sharp Kabushiki Kaisha Semiconductor storage device and electronic equipment therefor
US8509026B2 (en) * 2012-01-10 2013-08-13 Ememory Technology Inc. Word line boost circuit
JP5657063B2 (ja) * 2013-07-01 2015-01-21 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
US9608615B2 (en) * 2015-06-12 2017-03-28 Cypress Semiconductor Corporation Negative high voltage hot switching circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5771587A (en) * 1980-10-22 1982-05-04 Toshiba Corp Semiconductor storing device
JPS62219296A (ja) * 1986-03-20 1987-09-26 Hitachi Ltd 半導体集積回路装置
US5008856A (en) * 1987-06-29 1991-04-16 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with NAND cell structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7368778B2 (en) 2004-09-09 2008-05-06 Samsung Electronics Co., Ltd. DRAM having at least three layered impurity regions between channel holes and method of fabricating same
US7521348B2 (en) 2006-10-23 2009-04-21 Samsung Electronics Co., Ltd. Method of fabricating semiconductor device having fine contact holes

Also Published As

Publication number Publication date
FR2633433A1 (fr) 1989-12-29
US5400279A (en) 1995-03-21
JPH027295A (ja) 1990-01-11
FR2633433B1 (enExample) 1995-02-03
JP2728679B2 (ja) 1998-03-18
KR910001783A (ko) 1991-01-31

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