KR960701482A - 피(p)형 II-VI족 반도체의 경사형 조성의 오믹 접촉(GRADED COMPOSITION OHMIC CONTACT FOR P-TYPE II-IV SEMICONDUCTORS) - Google Patents

피(p)형 II-VI족 반도체의 경사형 조성의 오믹 접촉(GRADED COMPOSITION OHMIC CONTACT FOR P-TYPE II-IV SEMICONDUCTORS) Download PDF

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KR960701482A
KR960701482A KR1019950703361A KR19950703361A KR960701482A KR 960701482 A KR960701482 A KR 960701482A KR 1019950703361 A KR1019950703361 A KR 1019950703361A KR 19950703361 A KR19950703361 A KR 19950703361A KR 960701482 A KR960701482 A KR 960701482A
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전. 큐
제임스 엠. 드퓨이트
화. 쳉
마이클 에이 하세
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로저 로이 탬트
미네소타 마이닝 앤드 매뉴팩츄어링 컴패니
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Abstract

기판과, P형 Ⅱ-Ⅳ족 반도체로 된 디바이스층과, 전극과 이전극과 디바이스층 사이의 오믹 접촉층을 포함한 Ⅱ-Ⅳ족 레이저 다이오드, 상기 오믹 접촉층은 ZnTe를 포함한 경사형 조성의 반도체 화합물을 포함한다.반도체 화합물 ZnTe의 상대적 양은 상기 디바이스층으로부터 상기 오믹 접촉층의 거리의 증가와 함께 증가한다. 제1실시예에서 상기 오믹 접촉층은 상기 디바이스층의 반도체 화합물과 ZnTe를 포함한 경사형 조성의 반도체 합금을 포함한다. 합금의 ZnTe의 양은 상기 제1실시예에서 상기 디바이스층으로부터 상기 오믹 접촉층의 거리의 증가와 함께 증가한다. 제2실시예에서 상기 오믹 접촉층은 상기 디바이스층의 반도체 화합물로 된 층사이에 이격된 ZnTe로 된 층을 포함한다. ZnTe로 된 층의 두께가 증가하거나 또는 상기 디바이스층의 반도체 화합물로 된 층의 두께가 감소하고, 이와 함께 제2실시예의 상기 디바이스층으로 부터 상기 오밈 접촉층의 거리가 증가한다.

Description

피(p)형 ⅱ-ⅳ 족 반도체의 경사형 조성의 오믹 접촉(GRADED COMPOSITION OHMIC CONTACT FOR P-TYPE ⅱ-ⅳ SEMICONDUCTORS)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (21)

  1. 기판과; p형 Ⅱ-Ⅳ족 반도체 화합물 디바이스층과; 전극과; 상기 디바이스층과 전극 사이에 p형 오믹 접촉층을 포함하고, 제1반도체 화합물과;ZnTe를 포함한 제2반도체 화합물을 포함하는데, 상기 오믹 접촉층의 ZnTe의 상대적 평균량은 상기 디바이스층으로 부터의 오믹 접촉층의 거리의 증가에 따라 증가하는 것을 특징으로 하는 반도체 디바이스.
  2. 제1항에 있어서, 상기 제1반도체 화합물의 조성은p형 오믹 접촉층의 전체에 걸쳐 변화하고, 상기 오믹 접촉층의 평균 격자 상수는 오믹 접촉층의 전체에 걸쳐 상기 디바이스층의 격자 상수에 가까운 것을 특징으로 하는 반도체 디바이스.
  3. 제1항에 있어서, 상기 제1반도체 화합물의 조성은 변화하는 것을 특징으로 하는 반도체 디바이스.
  4. 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 p형 오믹 접촉형의 상기 제1반도체 화합물은 상기 디바이스층의 반도체 화합물을 포함한 것을 특징으로 하는 반도체 디바이스.
  5. 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 p형 오믹 접촉층의 상기 제1반도체 화합물은 상기 디바이스층의 반도체 화합물로 구성되는 것을 특징으로 하는 반도체 디바이스.
  6. 제1항에 있어서, 상기 p형 오믹 접촉층은 제1 및 제2반도체 화합물을 포함한 경사형 조성의 반도체 합금을 포함하고, 상기 합금의 ZnTe의 상대적 평균량은 상기 디바이스층으로부터 상기 오믹 접촉층의 거리의 증가에 따라 증가하는 것을 특징으로 하는 반도체 디바이스.
  7. 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 오믹 접촉층은 상기 제1반도체 화합물로 된 충돌 사이에 이격된 제2반도체 화합물로 된 층을 포함한 것을 특징으로 하는 반도체 디바이스.
  8. 제7항에 있어서, 상기 제2반도체 화합물은 ZnTe로 구성된 것을 특징으로 하는 반도체 디바이스.
  9. 제7항 또는 제8항에 있어서, 상기 제1반도체 화합물은 상기 디바이스층에 격자정합(lattice-matched)되는 것을 특징으로 하는 반도체 디바이스.
  10. 제7항 내지 제9항 중 어느 한 항에 있어서, 상기 제1반도체 화합물의 조성은 상기 p형 오믹 접촉층 전체에 걸쳐 변하고 이에 따라 상기 오믹 접촉층은 상기 디바이스층에 격자정합되는 것을 특징으로 하는 반도체 디바이스.
  11. 제7항 내지 10항중 어느 한 항에 있어서, 상기 제1반도체 화합물은 상기 디바이스층의 반도체 화합물을 포함한 것을 특징으로 하는 반도체 디바이스.
  12. 제7항 내지 제11항 중 어느 한 항에 있어서, 상기 제2반도체 화합물의 상기 충돌 사이의 공간은 상기 디바이스층으로부터 상기 오믹 접촉층의 거리에 증가에 따라 감소되는 것을 특징으로 하는 반도체 디바이스.
  13. 제7항 내지 제11항 중 어느 한 항에 있어서, 상기 제2반도체 화합물로 된 층들의 평균 두께는 상기 층으로 부터 상기 오믹 접촉층의 거리의 증가에 따라 증가하는 것을 특징으로 하는 반도체 디바이스.
  14. p형 Ⅱ-Ⅳ족 반도체 화합물 디바이스에 p형 오믹 접촉층을 형성하는 방법에 있어서, ZnTe를 포함한 반도체 화합물로 된 하나 이상의 층을 갖는 p형 오믹 접촉층을 상기 디바이스층 위에 성장시키는 단계와; 성장된 상기 오믹 접촉층의 두께가 상기 디바이스층으로브터 증가함에 따라 상기 화합물내의 ZnTe의 양이 증가하도록 상기 오믹 접촉층의 조성을 경사화시키는 단계를 포함한 것을 특징으로 하는 방법.
  15. 제14항에 있어서, 상기 오믹 접촉층을 성장시키는 단계는 ZnTe를 포함한 p형 반도체 합금을 성장시키는 단계를 포함하고, 상기 오믹 접촉층의 조성을 경화시키는 단계는 성장된 상기 오믹 접촉층의 두께가 상기 디바이스층으로부터 증가함에 따라 상기 화합물의 ZnTe의 양이 증가하도록 반도체의 성장을 제어하는 단계를 포함한 것을 특징으로 하는 방법.
  16. 제14항에 있어서, 상기 오믹 접촉층을 성장시키는 단계는 ZnTe와 상기 디바이스층의 반도체 화합물을 포함한 p형 반도체 합금으로 된 층을 성장시키는 단계를 포함하고; 상기 오믹 접촉층의 조성을 경화시키는 단계는 성장된 상기 오믹 접촉층의 두께가 상기 디바이스층으로부터 증가함에 따라 상기 합금의 ZnTe의 양이 증가하도록 상기 반도체의 성장을 제어하는 단계를 포함한 것을 특징으로 하는 방법.
  17. 제14항에 있어서, 상기 오믹 접촉층을 성장시키는 단계는 ZnTe를 포함한 제1반도체 화합물로 된 층들 사이에 이격된 제2반도체 화합물로 된 복수의 층ㅇ르 성장시키는 단계를 포함하는 것을 특징으로 하는 방법.
  18. 제17항에 있어서, 상기 오믹 접촉층을 성장시키는 단계는 상기 제2반도체 화합물로 된 층 사이에 이격된 상기 디바이스층의 반도체 화합물을 포함한 제1반도체 화합물로 된 복수의 층을 성장시키는 단계를 포함한 것을 특징으로 하는 방법.
  19. 제17항 또는 18항에 있어서, 상기 제2반도체 화합물로 된 층을 성장시키는 단계는 ZnTe로 구성되는 층들을 성장시키는 단계를 포함하는 것을 특징으로 하는 방법.
  20. 제17항 내지 19항 중 어느 한 항에 있어서, 상기 오믹 접촉층의 조성을 경사화시키는 단계는 성장된 상기 오믹 접촉층의 두께가 상기 디바이스층으로부터 증가하돌고함에 따라 상기 제2반도체 화합물로 된 층들 사이의 공간을 감소시키는 단계를 포함한 것을 특징으로 하는 방법.
  21. 제17항 내지 19항 중 어느 한 항에 있어서, 상기 오믹 접촉층의 조성을 경사화시키는 단계는 성장된 상기 오믹 접촉층의 두께가 상기 디바이스 층으로부터 증가하도록 함에 따라 상기 제2반도체 화합물로 된 층들 사이에 공간을 증가시키는 단계를 포함한 것을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950703361A 1993-02-12 1994-01-18 피(p)형II-VI족반도체의경사형조성의오믹접촉 KR100329023B1 (ko)

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US08/017,126 US5396103A (en) 1991-05-15 1993-02-12 Graded composition ohmic contact for P-type II-VI semiconductors
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PCT/US1994/000571 WO1994018709A1 (en) 1993-02-12 1994-01-18 Graded composition ohmic contact for p-type ii-vi semiconductors

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US5396103A (en) 1995-03-07
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DE69430524D1 (de) 2002-06-06
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