KR960043995A - 플라즈마 처리장치 - Google Patents

플라즈마 처리장치 Download PDF

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Publication number
KR960043995A
KR960043995A KR1019960017627A KR19960017627A KR960043995A KR 960043995 A KR960043995 A KR 960043995A KR 1019960017627 A KR1019960017627 A KR 1019960017627A KR 19960017627 A KR19960017627 A KR 19960017627A KR 960043995 A KR960043995 A KR 960043995A
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KR
South Korea
Prior art keywords
processing apparatus
plasma processing
ceramic material
frequency electrode
high frequency
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KR1019960017627A
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English (en)
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KR100294572B1 (ko
Inventor
고오이찌 후꾸다
김동길
다다히로 오오미
Original Assignee
다다히로 오오미
아베 아끼라
가부시키가이샤 프론테크
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Application filed by 다다히로 오오미, 아베 아끼라, 가부시키가이샤 프론테크 filed Critical 다다히로 오오미
Publication of KR960043995A publication Critical patent/KR960043995A/ko
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Publication of KR100294572B1 publication Critical patent/KR100294572B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H05H1/2418—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the electrodes being embedded in the dielectric

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

본 발명은 고주파전극에 미세한 구멍이 형성되어 있어도 그 구멍이 표면도 충분히 세라믹으로 덮여져 있고, 성막분위기를 오염시키는 일이 없이, 뛰어난 특성을 가지는 막을 형성할 수 있는 플라즈마 처리장치를 제공하는 것을 목적으로 한다.
본 발명은 금속의 적어도 플라즈마에 노출되는 부분이 세라믹재로 덮여져 이루어지는 고주파전극을 가지는 플라즈마 처리장치에 있어서, 상기 고주파전극으로부터의 가스방출량을 10-8Torr·L/esc∼10-6Torr·L/sec 이하로 한 것을 특징으로 한다.
또, 본 발명은 금속의 적어도 플라즈마에 노출되는 부분이 세라믹재로 덮여져 이루어지는 고주파전극을 가지는 프라즈마 처리장치에 있어서, 상기 세라믹재가 소결세라믹재인 것을 특징으로 한다.

Description

플라즈마 처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 고주파전극의 제조공정예를 나타낸 공정도이고, 제2도는 방출가스량과 절연내압의 관계를 나타낸 그래프이며, 제3도는 실시예에 관계되는 고주파전극을 나타낸 개념도이다.

Claims (6)

  1. 금속의 적어도 플라즈마에 노출되는 부분이 세라믹재로 덮여져 이루어지는 고주파전극을 가지는 플라즈마 처리장치에 있어서, 상기 고주파전극으로부터의 가스방출량을 10-8Torr·L/esc∼10-6Torr·L/sec 이하로 한 것을 특징으로 하는 플라즈마 처리장치.
  2. 제1항에 있어서, 상기 세라믹재는 소결세라믹재인 것을 특징으로 하는 플라즈마 처리장치.
  3. 금속의 적어도 플라즈마에 노출되는 부분이 세라믹재로 덮여져 이루어지는 고주파전극을 가지는 플라즈마 처리장치.
  4. 제3항에 있어서, 상기 세라믹재는 알루미나 또는 산화지르코늄인 것을 특징으로 하는 플라즈마 처리장치.
  5. 제3항 또는 제4항에 있어서, 상기 금속은 텅스텐 또는 몰리브덴인 것을 특징으로 하는 플라즈마 처리장치.
  6. 제3항 내지 제5항 중 어느 한 항에 있어서, 상기 고주파전극에는 미세한 구멍이 형성되어 있는 것을 특징으로 하는 플라즈마 처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960017627A 1995-05-25 1996-05-23 플라즈마 처리장치 KR100294572B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7126276A JP2933508B2 (ja) 1995-05-25 1995-05-25 プラズマ処理装置
JP95-126276 1995-05-25

Publications (2)

Publication Number Publication Date
KR960043995A true KR960043995A (ko) 1996-12-23
KR100294572B1 KR100294572B1 (ko) 2001-09-17

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960017627A KR100294572B1 (ko) 1995-05-25 1996-05-23 플라즈마 처리장치

Country Status (4)

Country Link
US (1) US20090194028A1 (ko)
JP (1) JP2933508B2 (ko)
KR (1) KR100294572B1 (ko)
TW (1) TW362336B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3668079B2 (ja) 1999-05-31 2005-07-06 忠弘 大見 プラズマプロセス装置
EP1475824A4 (en) 2002-10-07 2006-11-15 Sekisui Chemical Co Ltd PLASMA FILM FORMATION SYSTEM
WO2022215722A1 (ja) * 2021-04-07 2022-10-13 京セラ株式会社 シャワープレート

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06737A (ja) * 1991-03-29 1994-01-11 Shin Etsu Chem Co Ltd 静電チャック基板
US5560779A (en) * 1993-07-12 1996-10-01 Olin Corporation Apparatus for synthesizing diamond films utilizing an arc plasma
US5680013A (en) * 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces

Also Published As

Publication number Publication date
JPH08321399A (ja) 1996-12-03
US20090194028A1 (en) 2009-08-06
TW362336B (en) 1999-06-21
KR100294572B1 (ko) 2001-09-17
JP2933508B2 (ja) 1999-08-16

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