KR960043394A - 상이하게 변형되는 양자 우물 층을 가진 광 반도체 장치 - Google Patents

상이하게 변형되는 양자 우물 층을 가진 광 반도체 장치 Download PDF

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Publication number
KR960043394A
KR960043394A KR1019950047766A KR19950047766A KR960043394A KR 960043394 A KR960043394 A KR 960043394A KR 1019950047766 A KR1019950047766 A KR 1019950047766A KR 19950047766 A KR19950047766 A KR 19950047766A KR 960043394 A KR960043394 A KR 960043394A
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South Korea
Prior art keywords
quantum well
semiconductor device
optical semiconductor
well layers
well layer
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KR1019950047766A
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English (en)
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토시타카 아오야기
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기다오까 다까시
미쓰비시 뎅끼 가부시끼가이샤
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Application filed by 기다오까 다까시, 미쓰비시 뎅끼 가부시끼가이샤 filed Critical 기다오까 다까시
Publication of KR960043394A publication Critical patent/KR960043394A/ko

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/126—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06236—Controlling other output parameters than intensity or frequency controlling the polarisation, e.g. TM/TE polarisation switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3404—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation influencing the polarisation

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)

Abstract

인장-변형 양자 우물 층과 거의 동일한 파장을 가진 압축-변형 양자 층 또는 비변형된 양자 층이 적층 방향으로 교대로 또는 분리하여 활성 영역안에 형성된다.
바꾸어 말하면, 상기 두가지 유형의 양자 우물 층이 그 광의 진파 방향으로 나란히 놓인다.

Description

상이하게 변형되는 양자 우물 층을 가진 광 반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한 실시예에 따른 반도체 광 증폭기를 나타내는 투시도, 제2도는 제1도의 반도체 증폭기의 단면도.

Claims (6)

  1. 활성 영역 안에, 거의 동일한 발광 파장을 가지며 상이한 변형을 갖는 적어도 2개의 양자 우물 층을 구비함을 특징으로 하는 광 반도체 장치.
  2. 제1항에 있어서, 상기 적어도 2개의 양자 우물 층의 임의의 두개의 발광 파장 사이의 차이가 약 100nm를 초과하지 않음을 특징으로 하는 광 반도체 장치.
  3. 제1항에 있어서, 상기 적어도 2개의 양자 우물 층이 그의 적층(laminating) 방향으로 배열되는 것을 특징으로 하는 광 반도체 장치.
  4. 제1항에 있어서, 상기 적어도 2개의 양자 우물 층이 광의 진파 방향으로 배열되는 것을 특징으로 하는 광 반도체 장치.
  5. 제1항에 있어서, 상기 적어도 2개의 양자 우물 층들 중에서 적어도 하나가 인장 변형되는 반면 다른 양자 우물 층 중의 적어도 하나가 변형되지 않거나 압축 변형되는 것을 특징으로 하는 광 반도체 장치.
  6. 제1항에 있어서, 상기 적어도 2개의 양자 우물 층이 편파-무의존 특성을 제공하도록 형성됨을 특징으로 하는 광 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950047766A 1995-05-08 1995-12-08 상이하게 변형되는 양자 우물 층을 가진 광 반도체 장치 KR960043394A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-109731 1995-05-08
JP7109731A JPH08307014A (ja) 1995-05-08 1995-05-08 光半導体装置

Publications (1)

Publication Number Publication Date
KR960043394A true KR960043394A (ko) 1996-12-23

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950047766A KR960043394A (ko) 1995-05-08 1995-12-08 상이하게 변형되는 양자 우물 층을 가진 광 반도체 장치

Country Status (3)

Country Link
JP (1) JPH08307014A (ko)
KR (1) KR960043394A (ko)
FR (1) FR2734064B1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2784243B1 (fr) * 1998-10-02 2000-11-24 Cit Alcatel Amplificateur optique en semi-conducteur
AU775671B2 (en) * 1999-09-28 2004-08-12 Regents Of The University Of California, The Integrated wavelength tunable single and two-stage all-optical wavelength converter
JP2006269581A (ja) * 2005-03-23 2006-10-05 Mitsubishi Electric Corp 半導体レーザ装置
JP5919747B2 (ja) * 2011-11-15 2016-05-18 富士通株式会社 光半導体装置及びその製造方法
CN118198865B (zh) * 2024-05-20 2024-08-13 山东华光光电子股份有限公司 一种混合应变量子阱半导体光放大器及其制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69104573T2 (de) * 1990-08-03 1995-04-20 Philips Nv Optischer Verstärker.

Also Published As

Publication number Publication date
FR2734064B1 (fr) 1998-04-30
JPH08307014A (ja) 1996-11-22
FR2734064A1 (fr) 1996-11-15

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