KR960043094A

KR960043094A - Gate insulation film formation method according to device isolation film formation method

Info

Publication number: KR960043094A
Application number: KR1019950012292A
Authority: KR
Inventors: 엄금용
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1995-05-17
Filing date: 1995-05-17
Publication date: 1996-12-23

Abstract

본 발명은 소자분리막의 토폴로지에 의한 스트레스를 방지하고, 게이트절연막의 특성을 향상시키기 위한 소자분리막 형성방법에 따른 게이트절연막 형성방법에 관한 것으로, 반도체 소자 제조공정 중 소자분리막 형성후 상기 소자분리막 상부에 게이트산화막을 형성하는 공정에 있어서, 소자분리막 형성방법에 따라 게이트산화막의 산화공정을 달리하는 것을 특징으로 한다.The present invention relates to a method for forming a gate insulating film according to the method of forming a device isolation layer for preventing stress due to the topology of the device isolation layer and to improve the characteristics of the gate insulating film, after forming the device isolation layer during the semiconductor device manufacturing process. In the process of forming the gate oxide film, the oxidation process of the gate oxide film is different depending on the device isolation film formation method.

Description

Gate insulation film formation method according to device isolation film formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1A도 내지 제1C도는 로코스방법에 따른 소자분리막 형성후 게이트산화막 형성과정을 나타내는 단면도, 제2A도 내지 제2C도는 피비엘방법에 따른 소자분리막 혀성후 게이트산화막 형성과정을 나타내는 단면도.1A to 1C are cross-sectional views showing a gate oxide film formation process after forming a device isolation film according to the LOCOS method, and FIGS. 2A to 2C are cross-sectional views showing a gate oxide film formation process after forming a device isolation film according to the FBI method.

Claims

In the process of forming a gate oxide film on the device isolation film after forming the device isolation film during the semiconductor device manufacturing process, the oxidation process of the gate oxide film is changed according to the device isolation film formation method, the device isolation film is a polysilicon layer as a stress buffer layer of the gray film In the case of using the gate oxide film is a gate insulating film forming method according to the device isolation film forming method, characterized in that formed by a wet oxidation method.

The method of claim 1, wherein the wet oxidation is performed in an atmosphere in which H ₂ and O ₂ are supplied at a ratio of two to one.

In the process of forming a gate oxide film on the device isolation layer after the formation of the device isolation layer during the semiconductor device manufacturing process, the oxidation process of the gate oxide film is changed according to the method of forming the device isolation layer, the device isolation layer is by the LOCOS method The gate oxide film forming method according to the device isolation film forming method, characterized in that made of any one of a wet oxidation method or a dry oxidation method.

※ Note: The disclosure is based on the initial application.