KR970018225A - Gate dielectric film and formation method - Google Patents

Gate dielectric film and formation method Download PDF

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Publication number
KR970018225A
KR970018225A KR1019950031071A KR19950031071A KR970018225A KR 970018225 A KR970018225 A KR 970018225A KR 1019950031071 A KR1019950031071 A KR 1019950031071A KR 19950031071 A KR19950031071 A KR 19950031071A KR 970018225 A KR970018225 A KR 970018225A
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KR
South Korea
Prior art keywords
oxide film
gate dielectric
dielectric film
thermal oxide
formation method
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Application number
KR1019950031071A
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Korean (ko)
Inventor
강창석
Original Assignee
김광호
삼성전자 주식회사
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950031071A priority Critical patent/KR970018225A/en
Publication of KR970018225A publication Critical patent/KR970018225A/en

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Abstract

게이트 유전막 및 그 형성방법에 대해 기재되어 있다. 이는, 반도체기판 상에 형성된 열산화막 및 열산화막 상에 적층된 페로브스카이트계 산화막으로 구성된 것을 특징으로 한다. 따라서, 게이트 유전막의 정전용량을 증가시킬 수 있다.A gate dielectric film and a method of forming the same are described. This is characterized by consisting of a thermal oxide film formed on a semiconductor substrate and a perovskite oxide film laminated on the thermal oxide film. Therefore, the capacitance of the gate dielectric film can be increased.

Description

게이트 유전막 및 형성방법Gate dielectric film and formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 방법에 의해 형성된 게이트 유전막을 도시한 단면도이다,2 is a cross-sectional view showing a gate dielectric film formed by the method of the present invention,

제3A도 내지 제3D도는 본 발명에 의한 게이트 유전막 형성방법을 설명하기 위해 도시한 단면도들이다.3A to 3D are cross-sectional views illustrating a method of forming a gate dielectric film according to the present invention.

Claims (6)

반도체기판 상에 형성된 열산화막; 및 상기 열산화막 상에 적층된 페로브스카이트계 산화막으로 구성된 것을 특징으로 하는 게이트 절연막.A thermal oxide film formed on the semiconductor substrate; And a perovskite oxide film laminated on the thermal oxide film. 제1항에 있어서, 상기 열산화막의 두께는 10-50Å인 것을 특징으로 하는 게이트 절연막.The gate insulating film according to claim 1, wherein the thermal oxide film has a thickness of 10-50 GPa. 제1항에 있어서, 상기 페로브스카이트계 산화막은 BST 및 STO중 어느 하나인 것을 특징으로 하는 게이트 절연막.The gate insulating film of claim 1, wherein the perovskite oxide film is any one of BST and STO. 제1항 및 제3항 중 어느 한 항에 있어서, 상기 페로브스카이트계 산화막은 비정질 구조인 것을 특징으로 하는 게이트 절연막.The gate insulating film according to any one of claims 1 to 3, wherein the perovskite oxide film has an amorphous structure. 반도체 기판 상에 열산화막을 성장시키는 제1단계; 및 상기 열산화막 상에 페로브스카이트계 산화막을 형성하는 제2단계를 포함하는 것을 특징으로 하는 게이트 절연막 형성방법.A first step of growing a thermal oxide film on the semiconductor substrate; And forming a perovskite oxide film on the thermal oxide film. 제5항에 있어서, 상기 페로브카이트계 산화막은 BST 및 STO 중 어느 하나를 사용하여 형성하는 것을 특징으로 하는 게이트 절연막 형성방법.6. The method of claim 5, wherein the perovskite oxide film is formed using any one of BST and STO. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950031071A 1995-09-21 1995-09-21 Gate dielectric film and formation method KR970018225A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950031071A KR970018225A (en) 1995-09-21 1995-09-21 Gate dielectric film and formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950031071A KR970018225A (en) 1995-09-21 1995-09-21 Gate dielectric film and formation method

Publications (1)

Publication Number Publication Date
KR970018225A true KR970018225A (en) 1997-04-30

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Application Number Title Priority Date Filing Date
KR1019950031071A KR970018225A (en) 1995-09-21 1995-09-21 Gate dielectric film and formation method

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KR (1) KR970018225A (en)

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