KR970018225A - Gate dielectric film and formation method - Google Patents
Gate dielectric film and formation method Download PDFInfo
- Publication number
- KR970018225A KR970018225A KR1019950031071A KR19950031071A KR970018225A KR 970018225 A KR970018225 A KR 970018225A KR 1019950031071 A KR1019950031071 A KR 1019950031071A KR 19950031071 A KR19950031071 A KR 19950031071A KR 970018225 A KR970018225 A KR 970018225A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- gate dielectric
- dielectric film
- thermal oxide
- formation method
- Prior art date
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Abstract
게이트 유전막 및 그 형성방법에 대해 기재되어 있다. 이는, 반도체기판 상에 형성된 열산화막 및 열산화막 상에 적층된 페로브스카이트계 산화막으로 구성된 것을 특징으로 한다. 따라서, 게이트 유전막의 정전용량을 증가시킬 수 있다.A gate dielectric film and a method of forming the same are described. This is characterized by consisting of a thermal oxide film formed on a semiconductor substrate and a perovskite oxide film laminated on the thermal oxide film. Therefore, the capacitance of the gate dielectric film can be increased.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명의 방법에 의해 형성된 게이트 유전막을 도시한 단면도이다,2 is a cross-sectional view showing a gate dielectric film formed by the method of the present invention,
제3A도 내지 제3D도는 본 발명에 의한 게이트 유전막 형성방법을 설명하기 위해 도시한 단면도들이다.3A to 3D are cross-sectional views illustrating a method of forming a gate dielectric film according to the present invention.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950031071A KR970018225A (en) | 1995-09-21 | 1995-09-21 | Gate dielectric film and formation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950031071A KR970018225A (en) | 1995-09-21 | 1995-09-21 | Gate dielectric film and formation method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970018225A true KR970018225A (en) | 1997-04-30 |
Family
ID=66615747
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950031071A KR970018225A (en) | 1995-09-21 | 1995-09-21 | Gate dielectric film and formation method |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970018225A (en) |
-
1995
- 1995-09-21 KR KR1019950031071A patent/KR970018225A/en not_active Application Discontinuation
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WITN | Withdrawal due to no request for examination |