KR960036065A - Capacitor Formation Method of Semiconductor Device - Google Patents

Abstract

The present invention relates to a method of forming a capacitor of a semiconductor device, and to form a first conductive layer connected to a semiconductor substrate without forming a contact hole by using an etching process using a storage electrode mask and a deposition process of a conductor and a dielectric. The present invention relates to a technique for forming a capacitor formed of a second conductive layer connected to one side of a first conductive layer and increasing surface area to secure capacitance sufficient for high integration to enable isolation of semiconductor devices.

Description

Capacitor Formation Method of Semiconductor Device

As this is a public information case, the full text was not included.

1A to 1D are sectional views showing a capacitor forming process of a semiconductor device according to an embodiment of the present invention.

Claims (11)

A factory for forming a first conductive layer connected to a semiconductor substrate, a factory for forming a first conductive layer pattern using a first storage electrode mask, and a first dielectric film and a second conductive layer are sequentially formed on the entire surface. And sequentially etching the second conductive layer and the first dielectric layer using a second storage electrode mask, and etching the second conductive layer and the first dielectric layer using a third storage electrode mask. Exposing one side of the first conductive layer, forming a second dielectric film on the entire surface, exposing the second dielectric film back to the one side by etching the second dielectric film using a fourth storage electrode mask, and Forming a third conductive layer on the surface to provide a connection to the one side; etching the third conductive layer using the fifth storage electrode mask; and forming a third dielectric film on the entire surface. And forming a dielectric film only at an interface between the first conductive layer, the third conductive layer and the unexposed lower insulating layer by an etching process using a sixth storage electrode mask, and forming a fourth conductive layer on the entire surface. And forming a storage electrode formed of two layers by etching the fourth conductive layer by an etching process using a seventh storage electrode mask. 2. The method of claim 1, wherein said first. 2. 3. A method for forming a capacitor of a semiconductor device, wherein the conductive layer is formed of a polysilicon film, a polyside, or a similar conductive material. 2. The method of claim 1, wherein said first. 3. The method of forming a capacitor of a semiconductor device, characterized in that the conductive layer is used as a storage electrode. The method of claim 1, wherein the second. The method of forming a capacitor of a semiconductor device, characterized in that the four conductive layer is used as a plate electrode. 2. The method of claim 1, wherein said first. 2. A method for forming a capacitor of a semiconductor device, characterized in that the three dielectric film is formed in an ON or ONO composite structure. The method of claim 1, wherein the first storage electrode mask is used as the fifth storage electrode mask. The method of claim 1, wherein the second storage electrode mask is used as the seventh storage electrode mask. The method of claim 1, wherein the third storage electrode mask is used as the first storage electrode mask. The method of claim 1, wherein the fourth storage electrode mask is formed to be larger than the third storage electrode mask by the thickness of the second dielectric layer. The first storage electrode mask of claim 1, wherein the sixth storage electrode mask is disposed in the dielectric layer etching process. 3. The method of forming a capacitor of a semiconductor device according to claim 1, wherein the dielectric film is coated on the surface of the conductive layer. 3. The method of claim 1, wherein the storage electrode is formed in multiple layers. ※ Note: The disclosure is based on the initial application.