KR950034521A - Method for manufacturing storage electrode of semiconductor device - Google Patents

Method for manufacturing storage electrode of semiconductor device Download PDF

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Publication number
KR950034521A
KR950034521A KR1019940011178A KR19940011178A KR950034521A KR 950034521 A KR950034521 A KR 950034521A KR 1019940011178 A KR1019940011178 A KR 1019940011178A KR 19940011178 A KR19940011178 A KR 19940011178A KR 950034521 A KR950034521 A KR 950034521A
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KR
South Korea
Prior art keywords
storage electrode
oxide film
polycrystalline silicon
forming
oxide
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KR1019940011178A
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Korean (ko)
Inventor
김정호
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940011178A priority Critical patent/KR950034521A/en
Publication of KR950034521A publication Critical patent/KR950034521A/en

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Abstract

본 발명의 반도체소자의 저장전극 제조방법에 관한 것으로, 반도체소자가 고집적화됨에 따라 소자의 크기는 작아지고 더욱 많은 전하축전용량을 요구하게 되었으나 종래기술에서는 이를 충족시키지 못하였다. 따라서, 본 발명은 산화막 사이의 식각비를 이용한 습식방법을 사용하여 요철형상의 실린더형 저장전극을 형성함으로써 저장전극의 표면적을 증가시켜 보다 많은 전하를 축적할 수 있다. 따라서, 반도체소자의 신뢰성 및 생산성을 향상시키고 반도체소자의 고집적화를 가능하게 하는 기술에 관한 것이다.The present invention relates to a method for manufacturing a storage electrode of a semiconductor device. As the semiconductor device is highly integrated, the size of the device becomes smaller and requires more charge capacitance, but the prior art does not satisfy this. Therefore, in the present invention, by forming a concave-convex cylindrical storage electrode using a wet method using an etching ratio between oxide films, the surface area of the storage electrode can be increased to accumulate more charge. Accordingly, the present invention relates to a technology for improving reliability and productivity of semiconductor devices and enabling high integration of semiconductor devices.

Description

반도체소자의 저장전극 제조방법Method for manufacturing storage electrode of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도 내지 제4도는 본 발명의 실시예에 의한 반도체소자의 저장전극 제조공정을 도시한 단면도.1 to 4 are cross-sectional views showing a storage electrode manufacturing process of a semiconductor device according to an embodiment of the present invention.

Claims (4)

반도체소자의 저장전극 제조방법에 있어서, 반도체기판 상부에 하부절연층을 형성하고 예정된 부위에 상기 반도체기판을 노출시키는 콘택홀을 형성한 다음, 상기 콘택홀의 측벽에 절연막 스페이서를 형성하는 공정과, 상기 콘택홀을 통하여 상기 노출된 반도체기판에 접속되도록 전체구조상부에 저장전극을 제1다결정실리콘막을 일정두께 증착하는 공정과, 상기 저장전극을 제1다결정실리콘막 상부에 제1산화막, 제2산화막 및 제3산화막을 일정두께 순차적으로 증착하고 그 상부에 저장전극 마스크를 형성하는 공정과, 상기 저장전극 마스크를 사용하여 상기 제3,2,1산화막을 식각하고 습식방법으로 상기 식각된 제2산화막의 양면을 측면식각함으로써 제3산화막패턴, 제2산화막패턴 및 제1산화막패턴을 형성하는 공정과, 전체구조상부에 일정두께의 저장전극용 제2다결정실리콘막을 증착하는 공정과, 상기 제3산화막패턴과 상기 하부절연층을 식각장벽으로하여 상기 저장전극용, 제1,2다결정실리콘을 전면식각함으로써 저장전극용 제2다결정실리콘막패턴과 저장전극을 제1다결정실리콘막패턴을 형성하는 공정과, 상기 저장전극을 제2다결정실리콘막패턴의 내부에 형성된 산화막패턴을 습식방법으로 제거하여 요철형상의 실린더형 저장전극을 형성하는 공정을 포함하는 반도체소자의 저장전극 제조방법.A method of manufacturing a storage electrode of a semiconductor device, the method comprising: forming a lower insulating layer on an upper surface of a semiconductor substrate, forming a contact hole exposing the semiconductor substrate at a predetermined portion, and forming an insulating layer spacer on a sidewall of the contact hole; Depositing a first polycrystalline silicon film with a predetermined thickness on the entire structure so as to be connected to the exposed semiconductor substrate through a contact hole; and depositing the storage electrode on the first polycrystalline silicon film with a first oxide film, a second oxide film, and the like. Depositing a third oxide film sequentially to a predetermined thickness and forming a storage electrode mask thereon; and etching the third, second, and one oxide films using the storage electrode mask and wet etching the third oxide film. Forming both the third oxide film pattern, the second oxide film pattern, and the first oxide film pattern by side etching both surfaces; Depositing a second polycrystalline silicon film for an electrode; and etching the first and second polycrystalline silicon for the storage electrode by using the third oxide film pattern and the lower insulating layer as an etch barrier to etch the entire surface of the second polycrystalline silicon film for the storage electrode. Forming a first polycrystalline silicon film pattern of the pattern and the storage electrode; and forming a concave-convex cylindrical storage electrode by removing the oxide film pattern formed inside the second polycrystalline silicon film pattern by a wet method. Storage electrode manufacturing method of a semiconductor device comprising a. 제1항에 있어서, 상기 제2산화막의 두께는 상기 제1,3산화막 두께의 두배 이상으로하는 것을 특징으로 하는 반도체소자의 저장전극 제조방법.The method of claim 1, wherein the thickness of the second oxide layer is at least twice the thickness of the first and third oxide layers. 제1항에 있어서, 상기 제2산화막을 측면식각하는 습식방법은 상기 제1,2,3산화막 상호간의 식각비 차를 이용한 50:1의 BOE를 사용하는 것을 특징으로 하는 반도체소자의 저장전극 제조방법.The method of claim 1, wherein the wet method of side etching the second oxide layer uses a 50: 1 BOE using an etch ratio difference between the first, second and third oxide layers. Way. 제1항에 있어서, 상기 제1,2,3산화막패턴을 제거하는 습식방법은 상기 산화막패턴과 저장전극용 다결정 실리콘막과의 식각비 차를 이용한 9:1의 BOE를 사용하는 것을 특징으로 하는 반도체소자의 저장전극 제조방법.The wet method of claim 1, wherein the wet method of removing the first, second and third oxide film patterns uses a 9: 1 BOE using an etching ratio difference between the oxide film pattern and a polycrystalline silicon film for a storage electrode. Method for manufacturing a storage electrode of a semiconductor device. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940011178A 1994-05-23 1994-05-23 Method for manufacturing storage electrode of semiconductor device KR950034521A (en)

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Application Number Priority Date Filing Date Title
KR1019940011178A KR950034521A (en) 1994-05-23 1994-05-23 Method for manufacturing storage electrode of semiconductor device

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Application Number Priority Date Filing Date Title
KR1019940011178A KR950034521A (en) 1994-05-23 1994-05-23 Method for manufacturing storage electrode of semiconductor device

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KR950034521A true KR950034521A (en) 1995-12-28

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