KR960026292A - Step Coverage Improvement Method of Semiconductor Device - Google Patents

Step Coverage Improvement Method of Semiconductor Device Download PDF

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Publication number
KR960026292A
KR960026292A KR1019940034006A KR19940034006A KR960026292A KR 960026292 A KR960026292 A KR 960026292A KR 1019940034006 A KR1019940034006 A KR 1019940034006A KR 19940034006 A KR19940034006 A KR 19940034006A KR 960026292 A KR960026292 A KR 960026292A
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KR
South Korea
Prior art keywords
contact hole
semiconductor device
step coverage
etching step
layer
Prior art date
Application number
KR1019940034006A
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Korean (ko)
Inventor
이정석
육형선
박상호
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940034006A priority Critical patent/KR960026292A/en
Publication of KR960026292A publication Critical patent/KR960026292A/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 반도체 소자의 스텝커버리지 특성 개선방법에 관한 것으로, 금속배선 형성 전에 콘택홀 형성을 위한 식각시 습식식간 단계를 생략하고 건식식각 단계 후 프리크닝 공정에서 HF에 담궈 산화막의 종류에 따른 식각비(etch rate) 차이를 이용하여 완만한 콘택홀을 형성하는 것을 특징으로 한다.The present invention relates to a method for improving the step coverage characteristics of a semiconductor device, wherein a wet etching step for forming a contact hole before forming metal wiring is omitted, and an etching ratio according to the type of oxide film is immersed in HF in the pre-cleaning step after the dry etching step. It characterized in that to form a gentle contact hole using the (etch rate) difference.

Description

반도체 소자의 스텝커버리지 특성 개선방법.A method of improving step coverage characteristics of a semiconductor device.

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 내지 제2C도는 본 발명의 일 실시예에 따른 콘택홀 형성 공정 단면도.2A through 2C are cross-sectional views of a contact hole forming process according to an embodiment of the present invention.

Claims (2)

반도체 소자 제조공정 중 금속배선 형성 전에 콘택홀 형성을 위한 식각시 습식식각 단계를 생략하고 건식식각 단계 후 프리크리닝 공정에서 HF에 담궈 산화막의 종류에 따른 식각비(etch rate) 차이를 이용하여 완만한 콘택홀을 형성하는 것을 특징으로 하는 반도체 소자 스텝커버리지 특성 개선방법.During the semiconductor device manufacturing process, the wet etching step is omitted during the formation of the contact hole before the formation of the metal wiring, and after the dry etching step, the wet etching step is immersed in HF in the pre-cleaning step, and the etch rate according to the type of oxide film is used. Method for improving the step coverage characteristics of a semiconductor device, characterized in that to form a contact hole. 제1항에 있어서, 상기 콘택홀은 폴리실리콘층 위에 TEOS층을 증착한 다음, BPSG층을 증착하고, 플로우하는 단계; 상기 BPSG층, TEOS층을 차례로 선택식각함으로써 콘택홀을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 스텝커버리지 특성 개선방법.The method of claim 1, wherein the contact hole comprises: depositing a TEOS layer on the polysilicon layer, and then depositing and flowing a BPSG layer; And forming a contact hole by selectively etching the BPSG layer and the TEOS layer in sequence. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940034006A 1994-12-13 1994-12-13 Step Coverage Improvement Method of Semiconductor Device KR960026292A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940034006A KR960026292A (en) 1994-12-13 1994-12-13 Step Coverage Improvement Method of Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940034006A KR960026292A (en) 1994-12-13 1994-12-13 Step Coverage Improvement Method of Semiconductor Device

Publications (1)

Publication Number Publication Date
KR960026292A true KR960026292A (en) 1996-07-22

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Family Applications (1)

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KR1019940034006A KR960026292A (en) 1994-12-13 1994-12-13 Step Coverage Improvement Method of Semiconductor Device

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KR (1) KR960026292A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100591017B1 (en) * 2003-10-20 2006-06-22 동부일렉트로닉스 주식회사 Manufacturing method of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100591017B1 (en) * 2003-10-20 2006-06-22 동부일렉트로닉스 주식회사 Manufacturing method of semiconductor device

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