KR960037874A - Process for preparing manganese-zinc ferrite single crystal - Google Patents

Process for preparing manganese-zinc ferrite single crystal Download PDF

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Publication number
KR960037874A
KR960037874A KR1019950008151A KR19950008151A KR960037874A KR 960037874 A KR960037874 A KR 960037874A KR 1019950008151 A KR1019950008151 A KR 1019950008151A KR 19950008151 A KR19950008151 A KR 19950008151A KR 960037874 A KR960037874 A KR 960037874A
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KR
South Korea
Prior art keywords
single crystal
initial raw
zinc ferrite
manganese
raw material
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KR1019950008151A
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Korean (ko)
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KR0144614B1 (en
Inventor
임병묵
마재용
이병우
Original Assignee
이형도
삼성전기 주식회사
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Priority to KR1019950008151A priority Critical patent/KR0144614B1/en
Publication of KR960037874A publication Critical patent/KR960037874A/en
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Publication of KR0144614B1 publication Critical patent/KR0144614B1/en

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/007—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

본 발명은 VTR 헤드 사용되는 망간-아연 페라이트 단결정의 제조방법에 관한 것으로, 단결정 초기원료의 성장시점에 백금도가니 내에 백금관을 용액과 접하지 않도록 위치시키므로서 단결정의 초반부위에서의 가용부분이 크고 수율 또한 우수한 망간-아연 페라이트 단결정의 제조방법을 제공하고자 하는데 그 목적이 있다.The present invention relates to a method for producing a manganese-zinc ferrite single crystal used in a VTR head, wherein the soluble portion at the initial portion of the single crystal is large and yields by placing the platinum tube in the platinum crucible so as not to contact the solution at the time of growth of the single crystal initial raw material. In addition, an object of the present invention is to provide a method for producing an excellent manganese-zinc ferrite single crystal.

상기한 목적달성을 위한 본 발명은 종결정과 초기원료를 백금도가니에 넣어 로의 저부에 위치시키고 로의온도를 단결정의 용융온도까지 높인 후, 백금도가니를 상승시켜 종결정과 초기원료를 용융시킨 다음, 다시 하강시켜 초기원료를 성장시키고, 추가원료를 투입하여 조성을 조절하면서 망간-아연 페라이트 단결정을 제조하는 방법에 있어서, 상기 초기원료의 성장시작 시점에서 백금도가니의 내경보다 작은 직경의 백금관을 용액과 접촉되지 않도록 상면에 근접 위치시켜 초기원료의 성장종료까지 유지하는 것을 포함하여 이루어지는 망간-아연 페라이트 단결정의 제조방법을 제공함을 그 요지로 한다.In order to achieve the above object, the present invention places seed crystals and initial raw materials in a platinum crucible and places them at the bottom of the furnace, raises the temperature of the furnace to the melting temperature of the single crystal, and then raises the platinum crucible to melt the seed crystals and initial raw materials, In the method of manufacturing a manganese-zinc ferrite single crystal while lowering again to grow the initial raw material, and adding an additional raw material to adjust the composition, a platinum tube having a diameter smaller than the inner diameter of the platinum crucible at the start of the growth of the initial raw material and the solution; It is an object of the present invention to provide a method for producing a manganese-zinc ferrite single crystal, which is placed close to an upper surface so as not to be contacted, and thus maintaining the growth of the initial raw material.

Description

망간-아연 페라이트 단결정의 제조방법Process for preparing manganese-zinc ferrite single crystal

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 종래의 방법이 적용된 망간-아연 페라이트 단결정 제조장치의 개략도, 제2도는 본 발명의 방법이 적용된 망간-아연 페라이트 단결정 제조장치의 개략도,1 is a schematic diagram of a manganese-zinc ferrite single crystal manufacturing apparatus to which the conventional method is applied, and FIG. 2 is a schematic diagram of a manganese-zinc ferrite single crystal manufacturing apparatus to which the method of the present invention is applied,

Claims (2)

종결정과 초기원료을 백금도가니에 넣어 저부에 위치시키고 로의 온도를 단결정의 용융온도까지 높인 후, 백금도가니를 상승시켜 종결정과 초기원료를 용융시킨 다음, 다시 하강시켜 초기 원료를 성장시키고, 추가 원료를 투입하여 조성을 조절하면서 망간-아연 페라이트 단결정을 제조하는 방법에 있어서, 상기 초기원료의 성장시작 시점에서 백금도가니의 내경보다 작은 직경의 백금관을 용액과 접촉되지 않도록 상면에 근접 위치시켜 초기 원료의 성장종료까지 유지하는 것을 포함하여 이루어짐을 특징으로 하는 망간-아연 페라이트 단결정의 제조방법.Put seed crystals and initial raw materials into platinum crucibles, place them at the bottom, raise the furnace temperature to the melting temperature of single crystals, raise the platinum crucible to melt seed crystals and initial raw materials, and then lower them to grow initial raw materials. In the method of manufacturing a manganese-zinc ferrite single crystal while controlling the composition by the addition of, the diameter of the platinum tube smaller than the inner diameter of the platinum crucible at the time of the start of the initial raw material is placed close to the upper surface so as not to contact the solution of the initial raw material Method for producing a manganese-zinc ferrite single crystal, characterized in that it comprises maintaining until the end of growth. 제1항에 있어서, 상기 백금관의 직경은 20∼25㎜인 것을 특징으로 하는 망간-아연 페라이트 단결정의 제조방법.The method of manufacturing a manganese-zinc ferrite single crystal according to claim 1, wherein the platinum tube has a diameter of 20 to 25 mm. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019950008151A 1995-04-07 1995-04-07 Preparation method for single crystal of manganese-zing ferrite KR0144614B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950008151A KR0144614B1 (en) 1995-04-07 1995-04-07 Preparation method for single crystal of manganese-zing ferrite

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950008151A KR0144614B1 (en) 1995-04-07 1995-04-07 Preparation method for single crystal of manganese-zing ferrite

Publications (2)

Publication Number Publication Date
KR960037874A true KR960037874A (en) 1996-11-19
KR0144614B1 KR0144614B1 (en) 1998-07-15

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