JPS6153185A - Device for growing crystal - Google Patents
Device for growing crystalInfo
- Publication number
- JPS6153185A JPS6153185A JP17591084A JP17591084A JPS6153185A JP S6153185 A JPS6153185 A JP S6153185A JP 17591084 A JP17591084 A JP 17591084A JP 17591084 A JP17591084 A JP 17591084A JP S6153185 A JPS6153185 A JP S6153185A
- Authority
- JP
- Japan
- Prior art keywords
- sintered
- platinum
- sintered material
- melting
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、フェライトなどの単結晶を育成するための結
晶育成装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a crystal growth apparatus for growing single crystals such as ferrite.
従来例の構成とその問題点
従来単結晶を育成する場合には、ブリッジマン法と称せ
られる方法が使用されている。このブリッジマン法は、
第１図に示すように、ある適当な温度勾配をもった電気
炉１内で、原料を収容し溶融したるつぼ２を相対的に垂
直方向に移動させ、徐々にるつぼ２の先端部より固化さ
せ単結晶化させるものである。Conventional Structure and Problems Conventionally, when growing single crystals, a method called the Bridgman method has been used. This Bridgman method is
As shown in Fig. 1, in an electric furnace 1 with an appropriate temperature gradient, a crucible 2 containing melted raw materials is moved in a relative vertical direction, and the melted raw materials are gradually solidified starting from the tip of the crucible 2. It is used to form a single crystal.
しかしながら、このようにして成長させた単結晶は、組
成偏析が大きくなり、均一な組成を有するような単結晶
をうろことは難しい。また多量の白金あるいは白金−ロ
ジウム合金のるつぼを使用するため材料素材の高騰の原
因ともなっていた。However, the single crystal grown in this manner has a large compositional segregation, and it is difficult to obtain a single crystal having a uniform composition. Furthermore, the use of a crucible made of a large amount of platinum or platinum-rhodium alloy has caused a rise in the cost of raw materials.
発明の目的
本発明は、以上のような従来の問題点を解決し、組成偏
析の少い、しかも素材を安価に育成できる結晶育成装置
の提供を目的としたものである。OBJECTS OF THE INVENTION The object of the present invention is to solve the above-mentioned conventional problems and to provide a crystal growth apparatus that has less compositional segregation and can grow materials at low cost.
発明の構成
本発明は上記目的を達成するもので、予め生成された焼
結体を帯状に溶融させる溶融手段と、前記焼結体を前記
溶融手段に対して相対的に移動させる手段とを具備した
ことを特徴とする結晶育成装置を提供するものである。Structure of the Invention The present invention achieves the above object, and includes a melting means for melting a sintered body produced in advance in a band shape, and a means for moving the sintered body relatively to the melting means. The present invention provides a crystal growth apparatus characterized by the following features.
実施例の説明 以下に本発明の実施例を図面を用いて説明する。Description of examples Embodiments of the present invention will be described below with reference to the drawings.
第２図は本発明の一実施例における結晶育成装置の概略
図を示す。FIG. 2 shows a schematic diagram of a crystal growth apparatus in one embodiment of the present invention.
本実施例においてはあらかじめ必要とされる組成で混合
された原料を、たとえば円柱状にプレスした後、電気炉
（図示せず）内で約１３５０℃から１４００℃で焼結し
て焼結体３を作成しておく。In this example, raw materials mixed in advance with a required composition are pressed into, for example, a cylindrical shape, and then sintered at about 1350°C to 1400°C in an electric furnace (not shown) to form a sintered body. Create it.
次に焼結した焼結体３を高周波加熱炉ｃ内に白金の受は
皿４と支持台５で保持し、高周波加熱炉６の電源を入れ
、幅５儂の白金−ロジウム合金帯７を発熱させ、焼結体
３の一部分を１６６０°Ｃ〜１６７０℃の温度で溶融し
、支持台５を徐々に下方向に移動させ単結晶を育成する
。かかる装置では円柱状にしたフェライト焼結体３を高
周波加熱炉６内で部分的に溶融し、支持台４を徐々に移
動させ単結晶を育成させるため、組成偏析が約１／３に
減り、良質の単結晶が効率よく育成できる。又本実施例
では白金−ロジウム合金帯７を使用するため一部分にし
か貴金属である白金を使用する必要がなく出来あがった
素材の安価提供につながる。Next, the sintered body 3 is held in a high-frequency heating furnace c using a platinum tray 4 and a support base 5, the high-frequency heating furnace 6 is turned on, and a platinum-rhodium alloy strip 7 with a width of 5 degrees is heated. Heat is generated to melt a part of the sintered body 3 at a temperature of 1660° C. to 1670° C., and the support base 5 is gradually moved downward to grow a single crystal. In such an apparatus, the cylindrical ferrite sintered body 3 is partially melted in the high-frequency heating furnace 6, and the support base 4 is gradually moved to grow a single crystal, so compositional segregation is reduced to about 1/3. High-quality single crystals can be grown efficiently. Further, in this embodiment, since the platinum-rhodium alloy band 7 is used, it is not necessary to use platinum, which is a noble metal, only in a part of the band, and the resulting material can be provided at a low price.
発明の効果
以上要するに本発明は焼結体を高周波加熱炉で部分的に
溶融し、支持台を高周波加熱炉に対して相対的に徐々に
移動させ結晶を育成する結晶育成装置を提供するもので
、組成が均一であるとともに白金の使用量が少いため、
最終的な単結晶素材としての単価も従来に比べて約半分
の価格で出来ることが可能となった。Effects of the Invention In short, the present invention provides a crystal growth apparatus in which a sintered body is partially melted in a high-frequency heating furnace, and a support is gradually moved relative to the high-frequency heating furnace to grow crystals. , because the composition is uniform and the amount of platinum used is small.
The final single-crystal material can now be produced at about half the price compared to conventional methods.
第１図は、従来のブリッジマン法を説明するための電気
炉の概略断面図、第２図は、本発明の一実施例における
結晶育成装置を示す概略図である。
３・・・・・・フェライト焼結体、４・・・・・・白金
受は皿、６・・・・・・支持台、６・・・・・・高周波
コイル、７・・・・・・白金−ロジウム合金帯。FIG. 1 is a schematic sectional view of an electric furnace for explaining the conventional Bridgman method, and FIG. 2 is a schematic diagram showing a crystal growth apparatus in an embodiment of the present invention. 3... Ferrite sintered body, 4... Platinum receiver plate, 6... Support stand, 6... High frequency coil, 7...・Platinum-rhodium alloy band.
Claims (2)
段と、前記焼結体を前記溶融手段に対して相対的に移動
させる手段とを具備したことを特徴とする結晶育成装置
。(1) A crystal growth apparatus characterized by comprising a melting means for melting a sintered body produced in advance in a band shape, and a means for moving the sintered body relatively to the melting means.
特徴とする特許請求の範囲第１項記載の結晶育成装置。(2) The crystal growth apparatus according to claim 1, wherein the melting means comprises a platinum-rhodium alloy band.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17591084A JPS6153185A (en) | 1984-08-24 | 1984-08-24 | Device for growing crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17591084A JPS6153185A (en) | 1984-08-24 | 1984-08-24 | Device for growing crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6153185A true JPS6153185A (en) | 1986-03-17 |
Family
ID=16004376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17591084A Pending JPS6153185A (en) | 1984-08-24 | 1984-08-24 | Device for growing crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6153185A (en) |
-
1984
- 1984-08-24 JP JP17591084A patent/JPS6153185A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4303465A (en) | Method of growing monocrystals of corundum from a melt | |
| EP0405362A1 (en) | Method for manufacturing alloy rod having giant magnetostriction | |
| GB2119673A (en) | Process and apparatus for producing a strain free monocrystal of a crystalline ferroelectric compound | |
| JPS6153185A (en) | Device for growing crystal | |
| US3360405A (en) | Apparatus and method of producing semiconductor rods by pulling the same from a melt | |
| Kimura et al. | Crystal growth of Ba (B1− xAlx) 2O4 using a new Fz furnace with double ring-shaped halogen lamp heater | |
| EP0148946B1 (en) | Method of producing a chrysoberyl single crystal | |
| JPS5815472B2 (en) | crystal growth equipment | |
| JPS5815499Y2 (en) | Structure of crucible support | |
| JP7349100B2 (en) | Seed crystal for FeGa single crystal growth and method for producing FeGa single crystal | |
| JPS58181800A (en) | Crucible | |
| JPS58104100A (en) | Growth process for smco5 single crystal | |
| JPS63103889A (en) | Device for pulling up single crystal | |
| JPH0920596A (en) | Device for producing lithium tetraborate single crystal | |
| JPS5688895A (en) | Growth of single crystal | |
| JPH05170588A (en) | Crucible for producing single crystal and production of single crystal | |
| JPH0571551B2 (en) | ||
| JPS5852293Y2 (en) | Ferrite single crystal production equipment | |
| JPS6270296A (en) | Production of bi24si2o40 single crystal | |
| JPS6126587A (en) | Crystal growing device | |
| JPH08245289A (en) | Crystal growth apparatus and growth method | |
| JPS63185885A (en) | Crystal growing device of horizontal type | |
| KR960037874A (en) | Process for preparing manganese-zinc ferrite single crystal | |
| JPH01298100A (en) | Production of silicon carbide single crystal by liquid phase temperature difference method | |
| JPH06239687A (en) | Device for growing single crystal |