KR960036113A - 기판 상에 헤테로에피택셜 iii-v 질화물 반도체 재료를 포함하는 아티클 - Google Patents

기판 상에 헤테로에피택셜 iii-v 질화물 반도체 재료를 포함하는 아티클 Download PDF

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KR960036113A
KR960036113A KR1019960006587A KR19960006587A KR960036113A KR 960036113 A KR960036113 A KR 960036113A KR 1019960006587 A KR1019960006587 A KR 1019960006587A KR 19960006587 A KR19960006587 A KR 19960006587A KR 960036113 A KR960036113 A KR 960036113A
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iii
article
layer
nitride semiconductor
semiconductor material
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KR1019960006587A
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데이비드 브랜들 2세 찰스
노먼 부캐넌 데니스
하워드 하트포드 엘리엇
스벤 헬먼 에릭
프랑스 쉬니마이어 린
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유겐 이. 패처
에이티 앤드 티 아이피엠 코포레이션
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Publication of KR960036113A publication Critical patent/KR960036113A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

우리는 GaN과 같은 III-V질화물 반도체용으로 적합한 기판을 발견하였다. 기판 재료는 YbFe2O4또는 InFeO3(ZnO)n 구조형이고, R은 Sc, In, Y 및 란타족(원소번호 67-71)중 하나 이상이고, A 는 Fe(III), Ga 및 Al 중 하나 이상이고, M은 Mg, Mn, Fe(II), Co, Cu, Zn 및 Cd 중 하나 이상이고, n은 1이상의 정수인, 일반 화합물 RAO3(MO)n을 갖는다. 또한, 기판 재료는 기판 재료상에 증착되는 III-V 질하물 반도체 재료와 ±5%미만인 격자 부정합을 제공하는 격자 상수를 갖도록 선택된다, 기판 재료중 적어도 일부(예를들어, ScMgAlO4)는 전형적으로 단일 결정 형태로 쉽고 비교적 값 싸게 생산될 수 있고, 기저 판상에서 균열될 수 있으며, 전형적인 증착 조건하에서 III-V 질화물과 실질적으로 화학적 반응을 하지 않는다. 광 전자 소자 제작용 새로운 기판 재료의 이용이 고려된다.

Description

기판 상에 헤테로에피틱셜 III-V 질화물 반도체 재료를 포함한 아티클
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 예증적 소자, 즉 LED를 개략적으로 도시한 도면.

Claims (9)

  1. a)기판은 일반적 화합물 RAO3(MO)n의 실질적 단일 결정 재료이고, 여기서 R은 Sn,In,Y 및 원자번호 67 내지 71의 란탄족중 하나 이상이고, A 는 Fe(III), Ga 및 Al 중 하나 이상이고;M은 Mg,Mn,Fe(II),Co,Cu,Zn 및 Cd 중 하나 이상이고, n은 1이상의 정수이며, b)실질적 단일 결정 기판 재료는 (YbFe2O4구조형의 결정 구조 또는 InFeO3(ZnO)n 구조형의 결정 구조를 갖고, c)실질적 단일 결정 기판 재료는 III-V 질화물 반도체 재료의 격자 상수(a)와 ±5%미만의 격자 부정합을 제공하는 격자 상수를 갖는 것을 특징으로 하느 기판(12)상에 배치되고 실질상 에피택셜된 일정량의 III-V질화물 반도체재료(11)를 포함하는 아티클.
  2. 제1항에 있어서, 상기 일정량의 III-V 질화물 반도체 재료는 GaN,AlNM,InN,GaAlN,GaInN,AlInN,GaAlInN 및 질소 대신 As 또는 P가 대치된 상기 질화물에서 선태된 재료를 포함하는 것을 특징으로하는 아티클.
  3. 제1항에 있어서, n<9인 것을 특징으로 하는 아티클
  4. 제3항에 있어서, n≤3인 것을 특징으로 하는 아티클
  5. 제4항에 있어서 n=1인 것을 특징으로 하는 아티클
  6. 제5항에 있어서, 상기 실질적 단일 결정 기판 재료가 ScGaMgO4, InGaMgO4,ScAlMnO4,ScAlCoO4, ScAlMgO4및 InAlMgO4로 부터 선택된 것을 특징으로 하는 아티클
  7. 제1항에 있어서, 상기 일정량의 III-V 질화물 반도체 재료는 제1층이 제2층과 구성이 다르고, 상기 층중 적어도 한 층이 도핑된 반도체 재료층을 포함하는, 적어도 III-V질화물 반도체 재료의 제1 및 제2층을 갖는 층 구조인 것을 특징으로 하는 아티클.
  8. 제7항에 있어서, 상기 층 구조를 통해 전류를 흐르게 하기 위해 응용된 접점(19,19')을 더 포함하는 것을 특징으로하는 아티클
  9. 제8항에 있어서, 상기 아티클이 반도체 레이저 또는 발광 다이오드인 것을 특징으로 하는 아티클.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960006587A 1995-03-14 1996-03-13 기판 상에 헤테로에피택셜 iii-v 질화물 반도체 재료를 포함하는 아티클 KR960036113A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/403,329 US5530267A (en) 1995-03-14 1995-03-14 Article comprising heteroepitaxial III-V nitride semiconductor material on a substrate
US403,329 1995-03-14

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KR100832415B1 (ko) * 2000-10-10 2008-05-26 에이에스엠 인터내셔널 엔.브이. 유전 접합막의 나노적층판 구조, 유전 접합막을 이용한 집적회로 및 콘덴서 구조, 및 그 형성 방법

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JPH08288220A (ja) 1996-11-01
EP0732755A3 (en) 1999-11-03
EP0732755A2 (en) 1996-09-18
US5530267A (en) 1996-06-25
JP3115814B2 (ja) 2000-12-11

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