KR960032741U - 반도체 장치의 플라즈마 식각장치 - Google Patents

반도체 장치의 플라즈마 식각장치

Info

Publication number
KR960032741U
KR960032741U KR2019950006007U KR19950006007U KR960032741U KR 960032741 U KR960032741 U KR 960032741U KR 2019950006007 U KR2019950006007 U KR 2019950006007U KR 19950006007 U KR19950006007 U KR 19950006007U KR 960032741 U KR960032741 U KR 960032741U
Authority
KR
South Korea
Prior art keywords
plasma etching
semiconductor device
semiconductor
etching device
plasma
Prior art date
Application number
KR2019950006007U
Other languages
English (en)
Other versions
KR0122876Y1 (ko
Inventor
정양희
Original Assignee
엘지반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지반도체주식회사 filed Critical 엘지반도체주식회사
Priority to KR2019950006007U priority Critical patent/KR0122876Y1/ko
Publication of KR960032741U publication Critical patent/KR960032741U/ko
Application granted granted Critical
Publication of KR0122876Y1 publication Critical patent/KR0122876Y1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
KR2019950006007U 1995-03-30 1995-03-30 반도체 장치의 플라즈마 식각장치 KR0122876Y1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019950006007U KR0122876Y1 (ko) 1995-03-30 1995-03-30 반도체 장치의 플라즈마 식각장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019950006007U KR0122876Y1 (ko) 1995-03-30 1995-03-30 반도체 장치의 플라즈마 식각장치

Publications (2)

Publication Number Publication Date
KR960032741U true KR960032741U (ko) 1996-10-24
KR0122876Y1 KR0122876Y1 (ko) 1999-02-18

Family

ID=19410298

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019950006007U KR0122876Y1 (ko) 1995-03-30 1995-03-30 반도체 장치의 플라즈마 식각장치

Country Status (1)

Country Link
KR (1) KR0122876Y1 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100442194B1 (ko) * 2002-03-04 2004-07-30 주식회사 씨싸이언스 웨이퍼 건식 식각용 전극
KR100447891B1 (ko) * 2002-03-04 2004-09-08 강효상 반도체 웨이퍼의 건식 식각 방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6050722B2 (ja) * 2013-05-24 2016-12-21 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100442194B1 (ko) * 2002-03-04 2004-07-30 주식회사 씨싸이언스 웨이퍼 건식 식각용 전극
KR100447891B1 (ko) * 2002-03-04 2004-09-08 강효상 반도체 웨이퍼의 건식 식각 방법

Also Published As

Publication number Publication date
KR0122876Y1 (ko) 1999-02-18

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Legal Events

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A201 Request for examination
E701 Decision to grant or registration of patent right
REGI Registration of establishment
O032 Opposition [utility model]: request for opposition
O131 Decision on opposition [utility model]
O062 Revocation of registration by opposition: final registration of opposition [utility model]
LAPS Lapse due to unpaid annual fee