KR960026519A - 유전체에 대한 신뢰성 측정 방법 - Google Patents

유전체에 대한 신뢰성 측정 방법 Download PDF

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Publication number
KR960026519A
KR960026519A KR1019940040313A KR19940040313A KR960026519A KR 960026519 A KR960026519 A KR 960026519A KR 1019940040313 A KR1019940040313 A KR 1019940040313A KR 19940040313 A KR19940040313 A KR 19940040313A KR 960026519 A KR960026519 A KR 960026519A
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KR
South Korea
Prior art keywords
current
oxide film
dielectric
measurement
ramping
Prior art date
Application number
KR1019940040313A
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English (en)
Inventor
엄금용
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940040313A priority Critical patent/KR960026519A/ko
Priority to GBGB9526251.5A priority patent/GB9526251D0/en
Priority to GBGB9526576.5A priority patent/GB9526576D0/en
Priority to GB9526621A priority patent/GB2296778B/en
Priority to CN95120985A priority patent/CN1083984C/zh
Publication of KR960026519A publication Critical patent/KR960026519A/ko
Priority to US08/814,687 priority patent/US5793212A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

본 발명은 반도체 기판상에 성장된 게이트 산화막 등의 유전체의 성정 후 이 산화막에 대한 신뢰성 있는 측정 데이타를 얻기 위해 전류 램핑을 사용하는 측정 방법에 관한 것이다. 본 발명의 방법은 유전체에 가해지는 초기 전류밀도를 -10nA/㎠로 설정하고, 그 공급전류를 1 오더(order) 마다 log 25/디케이드씩 증가시키면서 전류 램핑마다 1초의 측정 지연시간(Td)을 두고 측정을 수행하는 것을 특징으로 한다. 본 발명에 의해 얇은 산화막에 대한 정확한 신뢰도 평가방법을 제공하여 산화막의 프로세스에 의한 영향, 손상 형성 및 정공 트랩핑 정도, 결함 형성등에 대한 산화막의 외인성 특성들을 알 수 있을 뿐만 아니라 산화막 자체가 가지는 고유의 특성을 신속히 평가할 수 있다.

Description

유전체에 대한 신뢰성 측정 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도(가)는 종래 CCST 방법에 따른 측정 결과를 도시한 그래프, 제2도(나),(다)는 각각 본 발명에 의한 방법에 따라 얻어진 측정결과를 나타낸 그래프.

Claims (4)

  1. 유전체에 가해지는 초기 전류밀도를 설정하고, 공급전류를 1 오더마다 소정등분으로 나누어 증가시키면서 공급하고, 각 등분된 전류 램핑 시간에서 일정시간 지연 후 측정을 실시하고, 램핑 전류의 공급시간에 대해 절연파괴에 이르는 전하량값을 검출하는 단계로 이루어지고, 각 램핑전류의 공급시 측정되는 값에 의해 유전막의 외인성 특성에서 초기 결함과 중간 결함을 나타내게 한 것을 특징으로 하는 유전체에 대한 신뢰성 측정 방법.
  2. 제1항에 있어서, 상기 초기 전류밀도가 -10nA/㎠로 설정되는 것을 특징으로 하는 유전체에 대한 신뢰성 측정 방법.
  3. 제1항에 있어서, 상기 전류 공급 등분이 log 25/디케이드로 되는 것을 특징으로 하는 유전체에 대한 신뢰성 측정 방법.
  4. 제1항에 있어서, 상기 전류 공급 등분이 log 3/디케이드로 설정한 것을 특징으로 하는 유전체에 대한 신뢰성 측정 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940040313A 1994-12-31 1994-12-31 유전체에 대한 신뢰성 측정 방법 KR960026519A (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1019940040313A KR960026519A (ko) 1994-12-31 1994-12-31 유전체에 대한 신뢰성 측정 방법
GBGB9526251.5A GB9526251D0 (en) 1994-12-31 1995-12-21 Method for testing dielectric film reliability
GBGB9526576.5A GB9526576D0 (en) 1994-12-31 1995-12-28 Method for testing dielectric film reliability
GB9526621A GB2296778B (en) 1994-12-31 1995-12-29 Method for measuring breakdown properties of dielectric film
CN95120985A CN1083984C (zh) 1994-12-31 1995-12-31 用于检验介电薄膜可靠性的方法
US08/814,687 US5793212A (en) 1994-12-31 1997-03-11 Method of measuring the breakdown charge of a dielectric film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940040313A KR960026519A (ko) 1994-12-31 1994-12-31 유전체에 대한 신뢰성 측정 방법

Publications (1)

Publication Number Publication Date
KR960026519A true KR960026519A (ko) 1996-07-22

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940040313A KR960026519A (ko) 1994-12-31 1994-12-31 유전체에 대한 신뢰성 측정 방법

Country Status (4)

Country Link
US (1) US5793212A (ko)
KR (1) KR960026519A (ko)
CN (1) CN1083984C (ko)
GB (3) GB9526251D0 (ko)

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KR100450260B1 (ko) * 2001-05-16 2004-09-30 한국과학기술연구원 박막의 파괴강도 시험방법

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US6014034A (en) * 1996-10-24 2000-01-11 Texas Instruments Incorporated Method for testing semiconductor thin gate oxide
US6049213A (en) * 1998-01-27 2000-04-11 International Business Machines Corporation Method and system for testing the reliability of gate dielectric films
JP3642456B2 (ja) * 1998-02-24 2005-04-27 株式会社村田製作所 電子部品の検査方法および装置
DE19840167B4 (de) * 1998-09-03 2005-02-10 Hewlett-Packard Co. (N.D.Ges.D.Staates Delaware), Palo Alto Verfahren zur elektrischen Prüfung von Basismaterial für die Herstellung gedruckter Schaltungen und Verfahren zur Erzeugung einer elektrisch geprüften Leiterplatte
US6133746A (en) * 1998-09-30 2000-10-17 Advanced Micro Devices, Inc. Method for determining a reliable oxide thickness
US6188234B1 (en) 1999-01-07 2001-02-13 International Business Machines Corporation Method of determining dielectric time-to-breakdown
US6269315B1 (en) * 1999-01-14 2001-07-31 United Microelectronics Corp. Reliability testing method of dielectric thin film
US6230106B1 (en) * 1999-10-13 2001-05-08 Modulation Instruments Method of characterizing a device under test
US6812688B2 (en) * 2001-12-12 2004-11-02 Tektronix, Inc. Signal acquisition method and apparatus using integrated phase locked loop
CN100353515C (zh) * 2003-12-31 2007-12-05 中芯国际集成电路制造(上海)有限公司 晶片金属互连线可靠性在线测试方法
US8659300B2 (en) 2010-12-15 2014-02-25 International Business Machines Corporation Stress testing of silicon-on-insulator substrates using applied electrostatic discharge
CN102820241B (zh) * 2012-08-29 2017-04-05 上海华虹宏力半导体制造有限公司 氧化物介质层经时绝缘击穿可靠性测试方法
US9596074B2 (en) 2015-05-01 2017-03-14 Tektronix, Inc. Clock recovery for data signals
CN105116303B (zh) * 2015-09-02 2018-05-25 中国电力科学研究院 一种估算50%放电电压试验所需试验次数的方法

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Publication number Priority date Publication date Assignee Title
KR100450260B1 (ko) * 2001-05-16 2004-09-30 한국과학기술연구원 박막의 파괴강도 시험방법

Also Published As

Publication number Publication date
CN1145477A (zh) 1997-03-19
GB9526621D0 (en) 1996-02-28
CN1083984C (zh) 2002-05-01
GB2296778A (en) 1996-07-10
US5793212A (en) 1998-08-11
GB9526576D0 (en) 1996-02-28
GB2296778B (en) 2000-04-05
GB9526251D0 (en) 1996-02-21

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