KR960024673A - 금속산화물 박막패턴 형성용 조성물 및 그 제조방법, 금속산화물 박막패턴의 형성방법 전자부품 및 광학부품의 제조방법, 및 박막의 형성방법 - Google Patents
금속산화물 박막패턴 형성용 조성물 및 그 제조방법, 금속산화물 박막패턴의 형성방법 전자부품 및 광학부품의 제조방법, 및 박막의 형성방법 Download PDFInfo
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- KR960024673A KR960024673A KR1019950048147A KR19950048147A KR960024673A KR 960024673 A KR960024673 A KR 960024673A KR 1019950048147 A KR1019950048147 A KR 1019950048147A KR 19950048147 A KR19950048147 A KR 19950048147A KR 960024673 A KR960024673 A KR 960024673A
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- Prior art keywords
- thin film
- forming
- composition
- metal oxide
- film pattern
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- 239000010409 thin film Substances 0.000 title claims abstract 34
- 239000000203 mixture Substances 0.000 title claims abstract 30
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract 28
- 150000004706 metal oxides Chemical class 0.000 title claims abstract 28
- 238000000034 method Methods 0.000 title claims 13
- 238000004519 manufacturing process Methods 0.000 title claims 10
- 230000003287 optical effect Effects 0.000 title claims 3
- 150000004703 alkoxides Chemical class 0.000 claims abstract 19
- 150000001875 compounds Chemical class 0.000 claims abstract 18
- 239000002184 metal Substances 0.000 claims abstract 15
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims abstract 11
- IAIWVQXQOWNYOU-FPYGCLRLSA-N nitrofural Chemical class NC(=O)N\N=C\C1=CC=C([N+]([O-])=O)O1 IAIWVQXQOWNYOU-FPYGCLRLSA-N 0.000 claims abstract 7
- 239000000758 substrate Substances 0.000 claims abstract 7
- CMWKITSNTDAEDT-UHFFFAOYSA-N 2-nitrobenzaldehyde Chemical class [O-][N+](=O)C1=CC=CC=C1C=O CMWKITSNTDAEDT-UHFFFAOYSA-N 0.000 claims abstract 6
- XUZLXCQFXTZASF-UHFFFAOYSA-N nitro(phenyl)methanol Chemical class [O-][N+](=O)C(O)C1=CC=CC=C1 XUZLXCQFXTZASF-UHFFFAOYSA-N 0.000 claims abstract 5
- 239000002994 raw material Substances 0.000 claims abstract 5
- JTWHVBNYYWFXSI-UHFFFAOYSA-N 2-nitro-1-phenylethanone Chemical class [O-][N+](=O)CC(=O)C1=CC=CC=C1 JTWHVBNYYWFXSI-UHFFFAOYSA-N 0.000 claims abstract 4
- CFBYEGUGFPZCNF-UHFFFAOYSA-N 2-nitroanisole Chemical class COC1=CC=CC=C1[N+]([O-])=O CFBYEGUGFPZCNF-UHFFFAOYSA-N 0.000 claims abstract 4
- PIAOLBVUVDXHHL-UHFFFAOYSA-N 2-nitroethenylbenzene Chemical class [O-][N+](=O)C=CC1=CC=CC=C1 PIAOLBVUVDXHHL-UHFFFAOYSA-N 0.000 claims abstract 4
- 150000002902 organometallic compounds Chemical class 0.000 claims abstract 4
- 239000003595 mist Substances 0.000 claims abstract 3
- 229940027988 antiseptic and disinfectant nitrofuran derivative Drugs 0.000 claims abstract 2
- 239000003960 organic solvent Substances 0.000 claims abstract 2
- 239000002904 solvent Substances 0.000 claims 6
- 239000007788 liquid Substances 0.000 claims 4
- 238000010992 reflux Methods 0.000 claims 4
- 239000003381 stabilizer Substances 0.000 claims 4
- 239000011248 coating agent Substances 0.000 claims 3
- 238000000576 coating method Methods 0.000 claims 3
- 239000010408 film Substances 0.000 claims 3
- 239000002131 composite material Substances 0.000 claims 2
- 150000002334 glycols Chemical class 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- BWRBVBFLFQKBPT-UHFFFAOYSA-N (2-nitrophenyl)methanol Chemical group OCC1=CC=CC=C1[N+]([O-])=O BWRBVBFLFQKBPT-UHFFFAOYSA-N 0.000 claims 1
- YMXDOZWKTUBYLU-UHFFFAOYSA-N 1-nitroethenylbenzene Chemical group [O-][N+](=O)C(=C)C1=CC=CC=C1 YMXDOZWKTUBYLU-UHFFFAOYSA-N 0.000 claims 1
- ZILXIZUBLXVYPI-UHFFFAOYSA-N 2,4-dinitrobenzaldehyde Chemical group [O-][N+](=O)C1=CC=C(C=O)C([N+]([O-])=O)=C1 ZILXIZUBLXVYPI-UHFFFAOYSA-N 0.000 claims 1
- FUBFWTUFPGFHOJ-UHFFFAOYSA-N 2-nitrofuran Chemical group [O-][N+](=O)C1=CC=CO1 FUBFWTUFPGFHOJ-UHFFFAOYSA-N 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 150000001735 carboxylic acids Chemical class 0.000 claims 1
- 150000002169 ethanolamines Chemical class 0.000 claims 1
- 239000002574 poison Substances 0.000 claims 1
- 231100000614 poison Toxicity 0.000 claims 1
- 230000007261 regionalization Effects 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000006303 photolysis reaction Methods 0.000 abstract 1
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Abstract
금속알콕시드와, 니트로벤질알코올유도체, 니트로벤즈알데히드유도체, 니트로스티롤유도체, 니트로아세토페논유도체, 니트로아니졸유도체 및 니트로푸란유도체로 구성되는 군에서 선택된 1종 또는 2종 이상의 니트로기함유 화합물을 함유하는 금속산화물 박막패턴 형성용 조성물. 이 조성물을 기판에 도포하여 광조사하고, 조사부의 광분해반응에 의한 광조사부와 비조사부와의 용해도차를 이용해서 패터닝한다.
유기용매와 유기금속화합물을 함유하는 원료액에 광반응성 화합물을 첨가하고, 이 용액을 미스트화하고, 광을 조사하면서 미스트를 기판에 부착시킨다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (30)
- 금속알콕시드를 함유하며, 광조사에 의해 금속산화물 박막패턴을 형성하기 위한 조성물에 있어서, 니트로벤질알코올유도체, 니트로벤즈알데히드유도체, 니트로스티롤유도체, 니트로아세토페논유도체, 니트로아니졸유도체 및 니트로푸란유도체로 구성되는 군에서 선택된 1종 또는 2종 이상의 니트로기함유 화합물을 함유하는 것을 특징으로 하는 금속산화물 박막패턴 형성용 조성물.
- 제1항에 있어서, 니트로기함유 화합물을 금속알콕시드에 대하여 0.05~6배몰 함유하는 것을 특징으로 하는 금속산화물 박막패턴 형성용 조성물.
- 제2항에 있어서, 니트로기함유 화합물을 금속알콕시드에 대하여 0.03~2배몰 함유하는 것을 특징으로 하는 금속산화물 박막패턴 형성용 조성물.
- 제1항에 있어서, 니트로벤질알코올유도체가 2-니트로벤질알코올인 것을 특징으로 하는 금속산화물 박막패턴 형성용 조성물.
- 제1항에 있어서, 니트로벤즈알데히드유도체가 2-니트로벤즈알데히드인 것을 특징으로 하는 금속산화물 박막패턴 형성용 조성물.
- 제1항에 있어서, 니트로벤즈알데히드유도체가 2,4-디니트로벤즈알데히드인 것을 특징으로 하는 금속산화물 박막패턴 형성용 조성물.
- 제1항에 있어서, 니트로스티롤유도체가 β-니트로스티롤인 것을 특징으로 하는 금속산화물 박막패턴 형성용 조성물.
- 제1항에 있어서, 니트로아세토페논유도체가 0-니트로아세토페논인 것을 특징으로 하는 금속산화물 박막패턴 형성용 조성물.
- 제1항에 있어서, 니트로아니졸유도체가 0-니트로아니졸인 것을 특징으로 하는 금속산화물 박막패턴 형성용 조성물.
- 제1항에 있어서, 니트로푸란유도체가 2-니트로푸란인 것을 특징으로 하는 금속 산화물 박막패턴 형성용 조성물.
- 제1항에 있어서, 니트로푸란유도체가 안티-5-니트로-2-푸랄독심인 것을 특징으로 하는 금속산화물 박막패턴 형성용 조성물.
- 제1항에 있어서, 니트로푸란유도체가 5-니트로-2-푸란산인 것을 특징으로 하는 금속산화물 박막패턴 형성용 조성물.
- 제1항에 있어서, 니트로푸란유도체가 5-니트로-2-프레알데히드인 것을 특징으로 하는 금속산화물 박막패턴 형성용 조성물.
- 제1항에 있어서, 또 조사광의 파장영역에 강한 흡수를 나타내지 않는 금속알콕시드의 안정화제를 함유하는 것을 특징으로 하는 금속산화물 박막패턴 형성용 조성물.
- 제14항에 있어서, 안정화제가 에탄올아민류, β-디케톤류, β-케토에스테르류, 카르복실산류, 글리콜류 및 글리콜에스테르류에서 선택된 1종 또는 2종 이상인 것을 특징으로 하는 금속산화물 박막패턴 형성용 조성물.
- 제1항에 있어서, 금속알콕시드와 상기한 니트로기함유 화합물을 용매에 용해시켜 가열환류 하므로써 형성된 금속알콕시드와 니트로기함유 화합물의 복합체를 함유하는 것을 특징으로 하는 금속산화물 박막패턴 형성용 조성물.
- 제1항에 있어서, 2종 이상의 금속알콕시드를 함유하는 것을 특징으로 하는 금속산화물 박막패턴 형성용 조성물.
- 제17항에 있어서, 2종 이상의 금속알콕시드가 복합알콕시드로서 함유되어 있는 것을 특징으로 하는 금속산화물 박막패턴 형성용 조성물.
- 제1항의 조성물을 제조하는 방법에 있어서, 금속알콕시드와 상기한 니트로기함유 화합물을 용매중에서 가열환류하므로서, 미리 금속알콕시드와 니트로기함유 화합물의 복합체를 형성한 후, 다른 성분을 첨가하는 것을 특징으로 하는 금속산화물 박막패턴 형성용 조성물의 제조방법.
- 제14항의 조성물을 제조하는 방법에 있어서, 금속알콕시드와 상기한 니트로기함유 화합물을 용매중에서 가열환류하므로써, 미리 금속알콕시드와 니트로기함유 화합물의 복합체를 형성한 후, 안정화제를 첨가하는 것을 특징으로 하는 금속산화물 박막패턴 형성용 조성물의 제조방법.
- 제17항의 조성물을 제조하는 방법에 있어서, 2종 이상의 금속알콕시드를 용매중에서 가열환류하여 미리 복합알콕시드를 형성한 후, 다른 성분을 첨가하는 것을 특징으로 하는 금속산화물 박막패턴 형성용 조성물의 제조방법.
- 제17항의 조성물을 제조하는 방법에 있어서, 2종 이상의 금속알콕시드를 용매중에서 가열환류하여 복합알콕시드를 형성한 후, 상기한 니트로기함유 화합물을 첨가하여 가열환류하므로써 복합알콕시드와 니트로기함유 화합물의 복합체를 형성하고, 계속해서 안정화제를 첨가하는 것을 특징으로 하는 금속산화물 박막패턴 형성용 조성물의 제조방법.
- 제1항의 금속산화물 박막패턴 형성용 조성물을 기판에 도포한 후, 얻어진 도포막에 소정의 패턴에 따라서 광조사하고, 조사부의 광반응에 의해 생기는 광조사부와 비광조사부와의 용매에 대한 용해도차를 이용하여 그 도포막을 패턴하는 것을 특징으로 하는 금속산화물 박막패턴의 형성방법.
- 제23항의 방법에 따라서, 금속산화물 박막패턴을 보유하는 전자부품을 제조하는 것을 특징으로 하는 전자부품의 제조방법.
- 제23항의 방법에 따라서, 금속산화물 박막패턴을 보유하는 광학부품을 제조하는 것을 특징으로 하는 광학부품의 제조방법.
- 유기용매와 유기금속소화합물을 함유하는 원료액을 미스트화하고, 그 미스트를 가열한 기판에 부착시켜 그 기판위에 박판을 형성하는 방법에 있어서, 상기한 원료 액중에 광반응성 화합물을 첨가하는 동시에, 상기한 기판에 부착하는 미스트를 향하여 광을 조사하는 것을 특징으로 하는 박막의 형성방법.
- 제26항에 있어서, 광반응성 화합물의 니트로벤질알코올유도체, 니트로벤즈알데히드유도체, 니트로스티롤유도체, 니트로아세토페논유도체, 니트로아니졸유도체 및 니트로푸란유도체로 구성되는 군에서 선택된 1종 또는 2종 이상의 니트로기함유 화합물인 것을 특징으로 하는 박막의 형성방법.
- 제26항에 있어서, 원료액중 광반응성 화합물의 함유량이 유기금속화합물의 0.05~6배몰인 것을 특징으로 하는 박막의 형성방법.
- 제28항에 있어서, 원료액중 광반응성 화합물의 함유량이 유기금속화합물의 0.3~2배몰인 것을 특징으로 하는 박막의 형성방법.
- 제26항에 있어서, 기판이 SiO2막 패턴에 의한 0.5~5㎛의 단차가 형성된 Si웨이퍼인 것을 특징으로 하는 박막의 형성방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (8)
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JP30620494 | 1994-12-09 | ||
JP94-306204 | 1994-12-09 | ||
JP94-316467 | 1994-12-20 | ||
JP31646794 | 1994-12-20 | ||
JP887095 | 1995-01-24 | ||
JP95-008870 | 1995-01-24 | ||
JP95-026696 | 1995-02-15 | ||
JP2669695 | 1995-02-15 |
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KR960024673A true KR960024673A (ko) | 1996-07-20 |
KR100294581B1 KR100294581B1 (ko) | 2001-09-17 |
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KR1019950048147A KR100294581B1 (ko) | 1994-12-09 | 1995-12-09 | 금속산화물박막패턴형성용조성물및그제조방법,금속산화물박막패턴의형성방법,전자부품및광학부품의제조방법,및박막의형성방법 |
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Cited By (1)
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KR100550168B1 (ko) * | 1995-09-11 | 2007-03-02 | 소니 가부시끼 가이샤 | 산화 비스무스의 생성 방법, 산화물막의 형성 방법, 및 반도체 소자의 캐패시터 구조의 제작 방법 |
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KR100378070B1 (ko) * | 1995-03-30 | 2003-08-21 | 소니 가부시끼 가이샤 | 비스무트층상 화합물의 제조방법 |
US6022669A (en) * | 1995-05-02 | 2000-02-08 | Symetrix Corporation | Method of fabricating an integrated circuit using self-patterned thin films |
US5833745A (en) * | 1995-11-15 | 1998-11-10 | Mitsubishi Materials Corporation | Bi-based ferroelectric composition and thin film, method for forming the thin film, and non-volatile memory |
EP0913359A4 (en) * | 1996-07-17 | 1999-10-20 | Citizen Watch Co Ltd | FERROELECTRIC ELEMENT AND PROCESS FOR PRODUCING THE SAME |
US6051858A (en) * | 1996-07-26 | 2000-04-18 | Symetrix Corporation | Ferroelectric/high dielectric constant integrated circuit and method of fabricating same |
DE19743270A1 (de) * | 1997-09-30 | 1999-04-01 | Siemens Ag | Herstellverfahren für eine keramische Schicht |
JP3491021B2 (ja) * | 1997-11-26 | 2004-01-26 | 大研化学工業株式会社 | 金属アセチリド化合物を含有した金属組成物、これを用いて金属膜を形成した素材及びその金属膜形成方法 |
JP3383838B2 (ja) * | 1999-02-25 | 2003-03-10 | 独立行政法人産業技術総合研究所 | 金属酸化物の製造方法及び微細パターンの形成方法 |
US6514576B1 (en) * | 1999-03-11 | 2003-02-04 | Agency Of Industrial Science And Technology | Method of manufacturing a diffraction grating |
US6777036B2 (en) | 2001-06-06 | 2004-08-17 | Simon Fraser University | Method for the deposition of materials from mesomorphous films |
US6700712B2 (en) * | 2001-11-13 | 2004-03-02 | 3M Innovative Properties Company | Multidirectional single surface optically shaped film |
US20030118947A1 (en) * | 2001-12-04 | 2003-06-26 | Primaxx, Inc. | System and method for selective deposition of precursor material |
KR20050041888A (ko) * | 2003-10-30 | 2005-05-04 | 니폰 파이오니쿠스 가부시키가이샤 | 절연막 성막용 원료 및 그것을 이용한 성막 방법 |
US7381633B2 (en) * | 2005-01-27 | 2008-06-03 | Hewlett-Packard Development Company, L.P. | Method of making a patterned metal oxide film |
US7695998B2 (en) * | 2005-07-02 | 2010-04-13 | Hewlett-Packard Development Company, L.P. | Methods for making and using high-mobility inorganic semiconductive films |
TWI326001B (en) * | 2006-12-27 | 2010-06-11 | Ind Tech Res Inst | Coatable inorganic material and method of forming pattern by utilizing the same |
TWI335033B (en) * | 2007-02-02 | 2010-12-21 | Ind Tech Res Inst | Laser beam directed pattern formation for disc stamper creation |
DE102007018845B4 (de) | 2007-04-20 | 2009-11-12 | Carl Von Ossietzky Universität Oldenburg | Verfahren zur Abscheidung einer metallhaltigen Substanz auf einem Substrat und Beschichtungsmaterial dafür |
KR101636911B1 (ko) * | 2009-05-07 | 2016-07-06 | 삼성전자주식회사 | 무기물층의 형성방법 |
EP2426684A1 (en) * | 2010-09-02 | 2012-03-07 | Mitsubishi Materials Corporation | Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method |
EP2608219B1 (en) * | 2011-12-20 | 2015-03-04 | Mitsubishi Materials Corporation | Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method |
KR101456237B1 (ko) * | 2012-04-16 | 2014-11-03 | 전자부품연구원 | 저온 공정을 이용한 산화물 박막 제조방법, 산화물 박막 및 그 전자소자 |
-
1995
- 1995-12-09 KR KR1019950048147A patent/KR100294581B1/ko not_active IP Right Cessation
- 1995-12-11 US US08/570,576 patent/US5630872A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100550168B1 (ko) * | 1995-09-11 | 2007-03-02 | 소니 가부시끼 가이샤 | 산화 비스무스의 생성 방법, 산화물막의 형성 방법, 및 반도체 소자의 캐패시터 구조의 제작 방법 |
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US5630872A (en) | 1997-05-20 |
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