KR960019734A - Capacitor Manufacturing Method of Semiconductor Memory Device - Google Patents

Abstract

Disclosed is a method of manufacturing a capacitor of a semiconductor memory device in which an effective surface area of a storage electrode is increased by using an HSG-Si film. The present invention includes forming an insulating film on a semiconductor substrate, forming a first conductive film and a pattern doped with impurities on the insulating film, and forming HSG-Si on the top and side surfaces of the insulating film and the first conductive film pattern. Forming a film, annealing the impurities contained in the first conductive film pattern to diffuse the HSG-Si film, and oxidizing the surface of the substrate on which the impurities are diffused to oxidize the HSG-Si oxide film on the entire surface of the substrate. Forming an HSG-Si oxide film formed on the insulating film between the first conductive film patterns so as to be defined on a cell basis; and forming an HSG-Si film formed on the insulating film between the first conductive film patterns. Removing the film, and removing the HSG-Si oxide film formed on the top and side surfaces of the first conductive film pattern to form a first electrode formed of the HSG-Si film and the first conductive film pattern, and the first Capacitive on the front of the electrode And the dielectric film and the comprising the step of forming a second electrode made of the second conductive film pattern in turn. According to the present invention, the capacitance of the capacitor can be stably increased by protecting the HSG-Si films formed on the top and side surfaces of the storage electrode through a simple process.

Description

Capacitor Manufacturing Method of Semiconductor Memory Device

As this is a public information case, the full text was not included.

4 through 8 are cross-sectional views illustrating a method of manufacturing a capacitor of a semiconductor memory device according to the present invention.

Claims (3)

Forming an insulating film on the semiconductor substrate; Forming a first conductive film pattern doped with impurities on the insulating film; Forming an HSG-Si film on top and side surfaces of the insulating film and the first conductive film pattern; Annealing impurities included in the first conductive layer pattern to diffuse the HSG-Si layer; Oxidizing a surface of the substrate on which the impurities are diffused to form an HSG-Si oxide film on the entire surface of the substrate; Removing the HSG-Si oxide film formed on the insulating film between the first conductive film patterns so as to be limited in units of cells; Removing the HSG-Si film formed on the insulating film between the first conductive film patterns; Removing the HSG-Si oxide layers formed on the top and side surfaces of the first conductive layer pattern to form a first electrode formed of the HSG-Si layer and the first conductive layer pattern; And sequentially forming a second electrode formed of a dielectric film and a second conductive film pattern of the capacitor on the front surface of the first electrode. The method of claim 1, wherein the first conductive layer pattern is formed by connecting to a substrate disposed below. The method of claim 1, wherein when the HSG-Si oxide film formed on the insulating film between the first conductive film patterns is removed, a portion of the HSG-Si film formed on the top and side surfaces of the first conductive film pattern is also removed. A capacitor manufacturing method of a semiconductor memory device. ※ Note: The disclosure is based on the initial application.