KR970054223A - Method for forming charge storage electrode of semiconductor device - Google Patents
Method for forming charge storage electrode of semiconductor device Download PDFInfo
- Publication number
- KR970054223A KR970054223A KR1019950050934A KR19950050934A KR970054223A KR 970054223 A KR970054223 A KR 970054223A KR 1019950050934 A KR1019950050934 A KR 1019950050934A KR 19950050934 A KR19950050934 A KR 19950050934A KR 970054223 A KR970054223 A KR 970054223A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- polysilicon film
- doped polysilicon
- charge storage
- storage electrode
- Prior art date
Links
Landscapes
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
본 발명은 도핑된 폴리실리콘막을 형성하는 제1담계; 상기 도핑된 폴리실리콘막 표면에 군데군데 다수의 물방울 형성하는 제2단계; 상기 물방울이 맺힌 부위의 폴리실리콘막을 산화시켜 산화막을 형성하는 제3단계; 상기 산화막을 마스크로하여 상기 도핑된 폴리실리콘막을 소정 깊이 식각하여 다수의 돌출부를 형성하는 제4단계; 및 상기 산화막을 제거하는 제5단계를 포함하는 것을 특징으로 하는 전하저장전극 형성 방법에 관한 것으로, 반도체 메모리 소자의 셀당 필요한 캐패시터 용량을 확보할 수 있도록 표면적이 극대화된 다수의 돌출부를 갖는 전하저장전극을 재현성이 용이한 공정으로 형성함으로써, 소자의 제조 수율 및 제조 단가의 절감을 가져오는 효과가 있다.The present invention is a first support system for forming a doped polysilicon film; A second step of forming a plurality of droplets on the surface of the doped polysilicon layer; A third step of forming an oxide film by oxidizing the polysilicon film of the water droplets; A fourth step of forming a plurality of protrusions by etching the doped polysilicon film by a predetermined depth using the oxide film as a mask; And a fifth step of removing the oxide film, wherein the charge storage electrode has a plurality of protrusions having a surface area maximized to ensure a required capacitor capacity per cell of a semiconductor memory device. By forming the process in an easily reproducible process, there is an effect of reducing the manufacturing yield and manufacturing cost of the device.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1A도 내지 제1D도는 본 발명의 일실시예에 따른 전하저장전극 형성 공정도.1A to 1D are process charts for forming a charge storage electrode according to an embodiment of the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950050934A KR970054223A (en) | 1995-12-16 | 1995-12-16 | Method for forming charge storage electrode of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950050934A KR970054223A (en) | 1995-12-16 | 1995-12-16 | Method for forming charge storage electrode of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970054223A true KR970054223A (en) | 1997-07-31 |
Family
ID=66595127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950050934A KR970054223A (en) | 1995-12-16 | 1995-12-16 | Method for forming charge storage electrode of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970054223A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100274347B1 (en) * | 1997-12-31 | 2000-12-15 | 김영환 | Method of forming a storage node in a semiconductor device |
KR100745065B1 (en) * | 2004-12-27 | 2007-08-01 | 주식회사 하이닉스반도체 | Method for removing a growth particle on Phase Shift Mask |
KR100762229B1 (en) * | 2001-12-27 | 2007-10-01 | 주식회사 하이닉스반도체 | Method for fabricating a photomask |
-
1995
- 1995-12-16 KR KR1019950050934A patent/KR970054223A/en not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100274347B1 (en) * | 1997-12-31 | 2000-12-15 | 김영환 | Method of forming a storage node in a semiconductor device |
KR100762229B1 (en) * | 2001-12-27 | 2007-10-01 | 주식회사 하이닉스반도체 | Method for fabricating a photomask |
KR100745065B1 (en) * | 2004-12-27 | 2007-08-01 | 주식회사 하이닉스반도체 | Method for removing a growth particle on Phase Shift Mask |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2515084B2 (en) | Storage electrode of dynamic random access memory cell and manufacturing method thereof | |
KR930009090A (en) | Manufacturing Method of Semiconductor Device | |
KR970054223A (en) | Method for forming charge storage electrode of semiconductor device | |
KR960030396A (en) | Method for rubbing a layer contained in a semiconductor device | |
KR960026826A (en) | Formation method of charge storage electrode | |
KR950034787A (en) | Method for Manufacturing Semiconductor Device and Etching Solution Used in Manufacturing | |
KR970054020A (en) | Capacitor Manufacturing Method | |
KR960039369A (en) | Capacitor Manufacturing Method of Semiconductor Memory Device | |
KR960026824A (en) | Formation method of charge storage electrode | |
KR970054212A (en) | Method for forming charge storage electrode of semiconductor device | |
KR950007104A (en) | Manufacturing method of cylindrical capacitor of semiconductor device | |
KR960032606A (en) | Method for forming charge storage electrode of semiconductor device | |
KR940022855A (en) | Capacitor Manufacturing Method of Semiconductor Memory Cell | |
KR960012499A (en) | Method for manufacturing charge storage electrode of capacitor | |
KR960019709A (en) | Method for forming charge storage electrode of semiconductor device | |
KR970003963A (en) | Method for forming charge storage electrode of capacitor | |
KR950021558A (en) | Method for manufacturing storage electrode of DRAM cell | |
KR950021495A (en) | How to Form Charge Storage Electrode | |
KR970023729A (en) | Charge storage electrode of capacitor and method of forming the same | |
KR970024321A (en) | Method of fabricating a capacitor of a semiconductor device | |
KR970003954A (en) | Capacitor Manufacturing Method of Semiconductor Device | |
KR960019708A (en) | Method for forming charge storage electrode of semiconductor device | |
KR950021561A (en) | Storage electrode formation method of DRAM cell | |
KR960002835A (en) | Capacitor Manufacturing Method | |
KR970024217A (en) | Method of manufacturing capacitors in semiconductor devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
SUBM | Submission of document of abandonment before or after decision of registration |