KR960015543B1 - 아몰퍼스 실리콘 박막의 제조방법 - Google Patents

아몰퍼스 실리콘 박막의 제조방법 Download PDF

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Publication number
KR960015543B1
KR960015543B1 KR1019940013713A KR19940013713A KR960015543B1 KR 960015543 B1 KR960015543 B1 KR 960015543B1 KR 1019940013713 A KR1019940013713 A KR 1019940013713A KR 19940013713 A KR19940013713 A KR 19940013713A KR 960015543 B1 KR960015543 B1 KR 960015543B1
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KR
South Korea
Prior art keywords
high frequency
thin film
discharge
amorphous silicon
silicon thin
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1019940013713A
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English (en)
Korean (ko)
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KR950008718A (ko
Inventor
아키라 고다마
요시미 와타베
마사시 우에다
Original Assignee
아네루바 가부시키가이샤
니시히라 슌지
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Publication of KR950008718A publication Critical patent/KR950008718A/ko
Application granted granted Critical
Publication of KR960015543B1 publication Critical patent/KR960015543B1/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1019940013713A 1993-09-21 1994-06-17 아몰퍼스 실리콘 박막의 제조방법 Expired - Lifetime KR960015543B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP93-234705 1993-09-21
JP5234705A JPH0794421A (ja) 1993-09-21 1993-09-21 アモルファスシリコン薄膜の製造方法

Publications (2)

Publication Number Publication Date
KR950008718A KR950008718A (ko) 1995-04-19
KR960015543B1 true KR960015543B1 (ko) 1996-11-18

Family

ID=16975103

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940013713A Expired - Lifetime KR960015543B1 (ko) 1993-09-21 1994-06-17 아몰퍼스 실리콘 박막의 제조방법

Country Status (4)

Country Link
US (1) US5437895A (enExample)
JP (1) JPH0794421A (enExample)
KR (1) KR960015543B1 (enExample)
TW (1) TW286434B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5648293A (en) * 1993-07-22 1997-07-15 Nec Corporation Method of growing an amorphous silicon film
JP3119172B2 (ja) * 1995-09-13 2000-12-18 日新電機株式会社 プラズマｃｖｄ法及び装置
KR100469134B1 (ko) * 1996-03-18 2005-09-02 비오이 하이디스 테크놀로지 주식회사 유도형플라즈마화학기상증착방법및그를이용하여생성된비정질실리콘박막트랜지스터
US6223683B1 (en) 1997-03-14 2001-05-01 The Coca-Cola Company Hollow plastic containers with an external very thin coating of low permeability to gases and vapors through plasma-assisted deposition of inorganic substances and method and system for making the coating
US6251233B1 (en) 1998-08-03 2001-06-26 The Coca-Cola Company Plasma-enhanced vacuum vapor deposition system including systems for evaporation of a solid, producing an electric arc discharge and measuring ionization and evaporation
US7361287B2 (en) * 1999-04-30 2008-04-22 Robert Bosch Gmbh Method for etching structures in an etching body by means of a plasma
KR100356470B1 (ko) * 1999-12-29 2002-10-18 주식회사 하이닉스반도체 반도체 소자의 고밀도 플라즈마막 형성 방법
US6451390B1 (en) 2000-04-06 2002-09-17 Applied Materials, Inc. Deposition of TEOS oxide using pulsed RF plasma
KR100757717B1 (ko) * 2000-04-13 2007-09-11 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠 박막 형성 방법, 박막 형성 장치 및 태양전지
JP4509337B2 (ja) * 2000-09-04 2010-07-21 株式会社Ihi 薄膜形成方法及び薄膜形成装置
DE60140803D1 (de) 2000-05-17 2010-01-28 Ihi Corp Plasma-cvd-vorrichtung und verfahren
US6828587B2 (en) * 2000-06-19 2004-12-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6703265B2 (en) * 2000-08-02 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP4674937B2 (ja) * 2000-08-02 2011-04-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6720052B1 (en) 2000-08-24 2004-04-13 The Coca-Cola Company Multilayer polymeric/inorganic oxide structure with top coat for enhanced gas or vapor barrier and method for making same
US6740378B1 (en) * 2000-08-24 2004-05-25 The Coca-Cola Company Multilayer polymeric/zero valent material structure for enhanced gas or vapor barrier and uv barrier and method for making same
JP4770029B2 (ja) 2001-01-22 2011-09-07 株式会社Ｉｈｉ プラズマｃｖｄ装置及び太陽電池の製造方法
US6599584B2 (en) * 2001-04-27 2003-07-29 The Coca-Cola Company Barrier coated plastic containers and coating methods therefor
US6714033B1 (en) * 2001-07-11 2004-03-30 Lam Research Corporation Probe for direct wafer potential measurements
DE10309711A1 (de) * 2001-09-14 2004-09-16 Robert Bosch Gmbh Verfahren zum Einätzen von Strukturen in einem Ätzkörper mit einem Plasma
US20030194563A1 (en) * 2002-04-15 2003-10-16 Yu Shi Coating composition containing an epoxide additive and structures coated therewith
WO2009036308A1 (en) * 2007-09-12 2009-03-19 Sub-One Technology Hybrid photovoltaically active layer and method for forming such a layer
US8828859B2 (en) * 2011-02-11 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Method for forming semiconductor film and method for manufacturing semiconductor device
WO2019044810A1 (ja) * 2017-08-30 2019-03-07 京セラ株式会社 太陽電池モジュール

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6393881A (ja) * 1986-10-08 1988-04-25 Anelva Corp プラズマ処理装置
JP3107857B2 (ja) * 1991-07-16 2000-11-13 久夫 小嶋 気液接触装置
JPH0747823B2 (ja) * 1991-12-06 1995-05-24 日新電機株式会社 プラズマｃｖｄ法及び装置
JPH08979B2 (ja) * 1991-12-06 1996-01-10 日新電機株式会社 プラズマｃｖｄ法及び装置
JPH08980B2 (ja) * 1991-12-06 1996-01-10 日新電機株式会社 プラズマｃｖｄ法及び装置
JPH0793272B2 (ja) * 1991-12-11 1995-10-09 日新電機株式会社 プラズマｃｖｄ法及び装置
JP3019563B2 (ja) * 1991-12-11 2000-03-13 日新電機株式会社 プラズマｃｖｄ法及び装置
JPH05218004A (ja) * 1992-02-04 1993-08-27 Nissin Electric Co Ltd 薄膜デバイスの絶縁膜形成方法
JPH0793295B2 (ja) * 1992-02-04 1995-10-09 日新電機株式会社 薄膜デバイスの絶縁膜形成方法
JPH05335244A (ja) * 1992-05-29 1993-12-17 Anelva Corp アモルファスシリコン薄膜の成膜方法

Also Published As

Publication number Publication date
KR950008718A (ko) 1995-04-19
TW286434B (enExample) 1996-09-21
US5437895A (en) 1995-08-01
JPH0794421A (ja) 1995-04-07

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