KR950008718A - 아몰퍼스 실리콘 박막의 제조방법 - Google Patents

아몰퍼스 실리콘 박막의 제조방법 Download PDF

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Publication number
KR950008718A
KR950008718A KR1019940013713A KR19940013713A KR950008718A KR 950008718 A KR950008718 A KR 950008718A KR 1019940013713 A KR1019940013713 A KR 1019940013713A KR 19940013713 A KR19940013713 A KR 19940013713A KR 950008718 A KR950008718 A KR 950008718A
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South Korea
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thin film
amorphous silicon
silicon thin
high frequency
discharge
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KR1019940013713A
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KR960015543B1 (ko
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아키라 고다마
요시미 와타베
마사시 우에다
Original Assignee
니시히라 슌지
니치덴 아네루바 가부시키가이샤
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Publication of KR950008718A publication Critical patent/KR950008718A/ko
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Publication of KR960015543B1 publication Critical patent/KR960015543B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

비교적 대형의 절연성의 기판에 아몰퍼스 실리콘 박막을 균일한 막두께로 형성하는 방법을 제공하는 것을 목적으로 하고 있다.
대형 유리 플레이트상에 플라즈마 CVD처리에 의하여 아몰퍼스 실리콘 박막을 형성하는 방법에 있어서, 플라즈마 생성을 위한 고주파 방전을 간헐적으로 행하고, 또한 각각의 방전기간의 시간을 고주파 인가전극쪽에 생기는 직류 바이어스 전압이 포화에 달하는 시간보다 짧게한다.

Description

아몰퍼스 실리콘 박막의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예에서 사용한 플라즈마 CVD 장치의 구성도.

Claims (5)

  1. 절연성의 기판상에 플라즈마 CVD처리에 의하여 박막을 형성하는 방법에 있어서, 플라즈마 생성을 위한 고주파 방전을 간헐적으로 행하고, 또한 각각의 방전기간의 시간을 고주파 인가전극쪽에 생기는 직류 바이어스 전압이 포화에 달하는 시간보다 짧게하는 것을 특징으로 하는 아몰퍼스 실리콘 박막의 제조방법.
  2. 제1항에 있어서, 간헐적으로 행하는 고주파 방전의 각각의 방전정지기간의 시간을 고주파 인가전극쪽에 생긴 직류 바이어스 전압이 소멸하는 시간보다 길게하는 것을 특징으로 하는 아몰퍼스 실리콘 박막의 제조방법.
  3. 제2항에 있어서, 고주파 간헐방전은 변조 주파수가 100Hz∼100KHz이고 듀티비가 1%이상 100%미만인 범위로 하는 것을 특징으로 하는 아몰퍼스 실리콘 박막의 제조방법.
  4. 제3항에 있어서, 고주파 간헐방전은 변조 주파수 1KHz, 듀티비 20%인 것을 특징으로 하는 것을 특징으로 하는 아몰퍼스 실리콘 박막의 제조방법.
  5. 제4항에 있어서, 박막이 아몰퍼스 실리콘인 것을 특징으로 하는 아몰퍼스 실리콘 박막의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940013713A 1993-09-21 1994-06-17 아몰퍼스 실리콘 박막의 제조방법 KR960015543B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5234705A JPH0794421A (ja) 1993-09-21 1993-09-21 アモルファスシリコン薄膜の製造方法
JP93-234705 1993-09-21

Publications (2)

Publication Number Publication Date
KR950008718A true KR950008718A (ko) 1995-04-19
KR960015543B1 KR960015543B1 (ko) 1996-11-18

Family

ID=16975103

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940013713A KR960015543B1 (ko) 1993-09-21 1994-06-17 아몰퍼스 실리콘 박막의 제조방법

Country Status (4)

Country Link
US (1) US5437895A (ko)
JP (1) JPH0794421A (ko)
KR (1) KR960015543B1 (ko)
TW (1) TW286434B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100469134B1 (ko) * 1996-03-18 2005-09-02 비오이 하이디스 테크놀로지 주식회사 유도형플라즈마화학기상증착방법및그를이용하여생성된비정질실리콘박막트랜지스터

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US5648293A (en) * 1993-07-22 1997-07-15 Nec Corporation Method of growing an amorphous silicon film
JP3119172B2 (ja) * 1995-09-13 2000-12-18 日新電機株式会社 プラズマｃｖｄ法及び装置
US6223683B1 (en) 1997-03-14 2001-05-01 The Coca-Cola Company Hollow plastic containers with an external very thin coating of low permeability to gases and vapors through plasma-assisted deposition of inorganic substances and method and system for making the coating
US6251233B1 (en) 1998-08-03 2001-06-26 The Coca-Cola Company Plasma-enhanced vacuum vapor deposition system including systems for evaporation of a solid, producing an electric arc discharge and measuring ionization and evaporation
US7361287B2 (en) * 1999-04-30 2008-04-22 Robert Bosch Gmbh Method for etching structures in an etching body by means of a plasma
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US6451390B1 (en) 2000-04-06 2002-09-17 Applied Materials, Inc. Deposition of TEOS oxide using pulsed RF plasma
JP4509337B2 (ja) * 2000-09-04 2010-07-21 株式会社Ｉｈｉ 薄膜形成方法及び薄膜形成装置
DE60134081D1 (de) * 2000-04-13 2008-07-03 Ihi Corp Herstellungsverfahren von Dünnschichten, Gerät zur Herstellung von Dünnschichten und Sonnenzelle
DE60140803D1 (de) 2000-05-17 2010-01-28 Ihi Corp Plasma-cvd-vorrichtung und verfahren
US6828587B2 (en) * 2000-06-19 2004-12-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4674937B2 (ja) * 2000-08-02 2011-04-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6703265B2 (en) * 2000-08-02 2004-03-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6740378B1 (en) * 2000-08-24 2004-05-25 The Coca-Cola Company Multilayer polymeric/zero valent material structure for enhanced gas or vapor barrier and uv barrier and method for making same
US6720052B1 (en) 2000-08-24 2004-04-13 The Coca-Cola Company Multilayer polymeric/inorganic oxide structure with top coat for enhanced gas or vapor barrier and method for making same
JP4770029B2 (ja) 2001-01-22 2011-09-07 株式会社Ｉｈｉ プラズマｃｖｄ装置及び太陽電池の製造方法
US6599584B2 (en) * 2001-04-27 2003-07-29 The Coca-Cola Company Barrier coated plastic containers and coating methods therefor
US6714033B1 (en) * 2001-07-11 2004-03-30 Lam Research Corporation Probe for direct wafer potential measurements
DE10309711A1 (de) * 2001-09-14 2004-09-16 Robert Bosch Gmbh Verfahren zum Einätzen von Strukturen in einem Ätzkörper mit einem Plasma
ES2250891T3 (es) 2002-04-15 2006-04-16 The Coca-Cola Company Composicion revestimiento que contiene un aditivo epoxidico y estructuras revestidas con el mismo.
WO2009036308A1 (en) * 2007-09-12 2009-03-19 Sub-One Technology Hybrid photovoltaically active layer and method for forming such a layer
US8828859B2 (en) * 2011-02-11 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Method for forming semiconductor film and method for manufacturing semiconductor device
WO2019044810A1 (ja) * 2017-08-30 2019-03-07 京セラ株式会社 太陽電池モジュール

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JPS6393881A (ja) * 1986-10-08 1988-04-25 Anelva Corp プラズマ処理装置
JP3107857B2 (ja) * 1991-07-16 2000-11-13 久夫 小嶋 気液接触装置
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100469134B1 (ko) * 1996-03-18 2005-09-02 비오이 하이디스 테크놀로지 주식회사 유도형플라즈마화학기상증착방법및그를이용하여생성된비정질실리콘박막트랜지스터

Also Published As

Publication number Publication date
KR960015543B1 (ko) 1996-11-18
US5437895A (en) 1995-08-01
TW286434B (ko) 1996-09-21
JPH0794421A (ja) 1995-04-07

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