KR960014445B1 - Structure of lead frame in an integrated circuit package - Google Patents
Structure of lead frame in an integrated circuit package Download PDFInfo
- Publication number
- KR960014445B1 KR960014445B1 KR1019930031195A KR930031195A KR960014445B1 KR 960014445 B1 KR960014445 B1 KR 960014445B1 KR 1019930031195 A KR1019930031195 A KR 1019930031195A KR 930031195 A KR930031195 A KR 930031195A KR 960014445 B1 KR960014445 B1 KR 960014445B1
- Authority
- KR
- South Korea
- Prior art keywords
- lead
- package
- lead frame
- integrated circuit
- circuit package
- Prior art date
Links
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 13
- 238000000465 moulding Methods 0.000 claims description 6
- 238000011109 contamination Methods 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 claims 1
- 239000000088 plastic resin Substances 0.000 abstract description 5
- 238000005520 cutting process Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000009966 trimming Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
제1도는 집적회로 패키지 제품에 사용되는 리드프레임에 형상도.1 is a schematic view of a leadframe used in an integrated circuit package product.
제2도는 집적회로 패키지 제품의 봉함 형상도.2 is a sealed shape of an integrated circuit package product.
제3도는 제1도의 A부분 확대도.3 is an enlarged view of portion A of FIG.
제4도는 제3도에서 봉함공정을 거친후 트리밍공정에서의 상태도.4 is a state diagram in a trimming process after the sealing process in FIG.
제5도는 본 발명의 봉함시 사용되는 리드프레임의 모서리부분 확대도.Figure 5 is an enlarged view of the edge of the lead frame used in the sealing of the present invention.
제6도는 제5도의 다른 실시예.6 is another embodiment of FIG.
제7도는 제4도에서 패키지 모서리부분의 댐바를 절단했을 경우의 형상도.FIG. 7 is a diagram showing a case where the dam bar at the corner of the package is cut in FIG.
제8도는 제5도에서 패키지 모서리부분의 댐바를 절단했을 경우의 형상도.FIG. 8 is a diagram when the dam bar at the corner of the package is cut in FIG. 5. FIG.
제9도는 제6도의 리드프레임을 사용하여 봉함한 경우의 형상도.FIG. 9 is a view of a case where the lead frame of FIG. 6 is sealed. FIG.
(이때는 패키지 모서리부분에 댐바가 없기 때문에 댐바절단 가공이 필요없다)(At this time, there is no dam bar at the edge of the package, so no dam bar cutting process is necessary.)
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 패키지 2 : 리드프레임1: package 2: leadframe
3 : 타이바 4 : 댐바3: tie bar 4: dam bar
5 : 펀치 6 : 플래쉬5: punch 6: flash
7 : 홀 8 : 보조타이바7: hole 8: auxiliary tie bar
9 : 메탈9: metal
본 발명은 네면으로 리드가 심어지는 집적회로 패키지(플라스틱수지봉함 패키지)에서 패키지 모서리부분으로 누출되는 플라스틱수지물(이하, 플레쉬라함)을 제거하는 방법 및 그에 따른 리드프레임의 구조에 대한 것이다.The present invention relates to a method of removing a plastic resin leaking to the edge of a package (hereinafter referred to as a flash) in an integrated circuit package (plastic resin sealing package) in which leads are formed on four sides, and a structure of the lead frame accordingly.
현재의 집적회로 패키지 개발추세는 집적도를 높이기 위하여 한정된 크기에 리드(LEAD;도선)수가 되도록 많이 심어지도록 요구되어 있다. 따라서 리드피치(LEAD PITCH)가 점점 좁아져서(1.0㎜→0.30㎜) 패키지 모서리부분이 리드(10)와 리드프레임메탈(9)과의 간격이 매우 좁게 구성되어 있다(0.18㎜). 그러므로 이부분에서의 댐바(4)를 절단할때 제4도의 메탈(9)과의 패키지(1)사이에 누출된 프레쉬(6)가 완전히 제거되지 않고 제7도의 예시와 같이 리드(10)옆면에 붙어있게 되는 관계로 솔더(SOLDER)도금시 이 제거되지 않은 플레쉬(6)의 영향으로 리드(10)의 불완전도금을 유발시키고, 또한 리드를 필요형상으로 구부리는 공정인 포밍(FORMMING)공정 및 타이바(3;리드프레임(2)의 패드(11)를 지지해 주는 선)를 절단하는 싱규레이션(SINGULATION)공정에서 불량을 야기시키며, 또한 댐바가 없는 리드프레임을 플라스틱수지를 봉함할 경우 리드프레임의 메탈(9) 외곽부분이 같은 패키지라 하더라도 일정한 위치에 있지 않는 경우가 종종 있기 때문에 봉함금형상의 설계변경이나 트리밍/포밍장비의 개선으로는 패키지 모서리부분의 플레쉬 누출을 막을 수는 없는 것이다.The current trend of development of integrated circuit packages is required to be planted as much as possible to lead in a limited size to increase the degree of integration. Accordingly, the lead pitch becomes narrower (1.0 mm to 0.30 mm), and the edge portion of the package is very narrow (0.18 mm) between the lead 10 and the lead frame metal 9. Therefore, when cutting the dam bar 4 in this part, the leaked fresh 6 between the package 1 and the metal 9 of FIG. 4 is not completely removed and the side surface of the lid 10 as shown in FIG. Forming process, which is a process of inducing incomplete plating of the lead 10 and bending the lead to the required shape due to the influence of the flash 6 not removed when soldering the solder. In the singulation process of cutting the tie bar 3 (a line supporting the pad 11 of the lead frame 2), a defect is caused, and the lead frame without the dam bar is sealed when the plastic resin is sealed. Even though the outer parts of the metal 9 of the frame are often in the same package, the design of the sealing mold or the improvement of the trimming / forming equipment cannot prevent the leakage of the package edges.
한편, 이러한 문제점을 개선하기 위한 방법으로 종래에는 댐바(4)를 패키지(1)와 가깝게 위치하도록 설계하거나 트리밍공정시 타이바(3)와 플레쉬(6)를 먼저 절단, 제거하는 방법등이 사용되어 왔으나 이는 집적회로 패키지의 조립공정에서 적용하기 어려운 부분이 많아서 일부 두께가 얇게 형성되는 가벼운 패키지(THIN QUAD FLAT PACKAGE)에 한하여 한정적으로 적용되고 있는 실정이다.On the other hand, as a method for improving such a problem, conventionally, the dam bar 4 is designed to be positioned close to the package 1, or the tie bar 3 and the flash 6 are first cut and removed during the trimming process. However, this is a situation that is limited to a light package (THIN QUAD FLAT PACKAGE), which is formed in a thin part because there are many parts that are difficult to apply in the assembly process of the integrated circuit package.
본 발명은 이와같은 종래 집적회로 패키지의 제조방법이 갖는 제결함을 감안하여 패키지의 무게나 형상에 관계없이 일반 프라스틱수지를 사용하는 모든 집적회로 패키지 제품을 적용 가능토록 리드프레임의 모서리구조를 개량함으로써 모서리부분에서의 플래쉬 누출을 완전히 방지할 수 있도록 한 것이다.In view of the deficiencies of the conventional integrated circuit package manufacturing method, the present invention improves the edge structure of the lead frame so that all integrated circuit package products using general plastic resin can be applied regardless of the weight or shape of the package. It is designed to completely prevent flash leakage at the corners.
이하, 본 발명을 첨부예시도면에 의거 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
본 발명은 제1도의 예시도 같은 네면으로 리드가 심어지는 집적회로 패키지를 성형 제조함에 있어서, 리드프레임(2)의 모서리단 성형리드(10')에 보조타이바(8)를 설치하되 패키지(1) 성형부위 안쪽으로 위치시켜 타이바(3) 지지용 메탈(9)부분과 연결시킴으로써 성형시 외부리드(10)부분으로의 플레쉬(6) 누출오염이 완전히 차단되도록 한 것이다.According to the present invention, in forming and manufacturing an integrated circuit package in which leads are planted on four sides as illustrated in FIG. 1, the auxiliary tie 8 is installed on the edge forming lead 10 'of the lead frame 2, but the package ( 1) It is located inside the molding part and connected to the tie bar (3) supporting metal (9) part so that the leakage of flash (6) to the outer lead (10) part is completely blocked during molding.
본 발명의 집적회로 패키지에 적용되는 리드프레임(2)은 제5도의 예시와 같이 외부리드(10)와 메탈(9)사이에 댐바(4)를 연결 구성한 리드프레임 구조를 개량한 것이다.The lead frame 2 applied to the integrated circuit package of the present invention is an improvement of the lead frame structure in which the dam bar 4 is connected between the outer lead 10 and the metal 9 as illustrated in FIG. 5.
즉, 상기 외부리드(10)에 연설되며 타이바(3)에 인접하는 모서리단 성형리드(10')에서 보조타이바(8)를 분기하여 상기 타이바(3)를 잡아주는 메탈(9)과 연결시키되 보조타이바(8)가 패키지(1) 성형부위 안쪽으로 위치하도록 설치하여 공간부(a)(b)와 외부리드(10)가 상기 보조타이바(8)에 의해 차단 격리되도록 한 것이다.That is, the metal 9, which is spoken to the outer lead 10 and branches the auxiliary tie 8 from the edge end forming lead 10 ′ adjacent to the tie bar 3, holds the tie bar 3. The auxiliary tie 8 is installed so that the auxiliary tie 8 is positioned inside the molded part of the package 1 so that the space parts a and b and the outer lead 10 are blocked and isolated by the auxiliary tie 8. will be.
한편, 이와같이 공간부(a)(b)와 외부리드(10)가 차단된 구조에서는 제6도와 같이 외부리드(10)와 메탈(9)을 연결하고 있는 댐바(4)를 제거할 수 있으며, 그로인해 제조공정중 댐바(4)를 절단 가공하는 과정을 생략할 수 있다.On the other hand, in the structure in which the space (a) (b) and the outer lead 10 is blocked in this way, it is possible to remove the dam bar (4) connecting the outer lead 10 and the metal (9), as shown in FIG. Therefore, the process of cutting the dam bar 4 during the manufacturing process can be omitted.
이와같이 본 발명의 리드프레임 구조에 의해 피키지(1) 성형을 하게 되면 제5,6도에서 보듯이 성형리드(10')의 타이바(3)의 사이에 형성되는 공간부(a)(b)가 외부리드(10)와 차단되어 있는 상태이기 때문에 공간부(a)(b)의 몰드성형시 타이바(3)와 성형리드(10')의 두께 사이에 형성되는 틈새를 통해 누출되는 플레쉬(6)가 타이바(3)의 양쪽에 형성된 보조타이바(8)에 의해 그 흐름이 차단되어 외부리드(10)의 오염을 방지시키게 되므로 리드의 도금성을 향상시키게 되는 것이며, 아울러 포밍공정 및 싱귤레이션공정에서의 불량율을 최소화시켜 제품의 품질향상을 꾀할 수 있는 것이다.As described above, when the package 1 is formed by the lead frame structure of the present invention, as shown in FIGS. 5 and 6, the spaces a and b are formed between the tie bars 3 of the forming leads 10 ′. Flashes leaking through the gap formed between the tie bar 3 and the thickness of the molding lead 10 'during the mold molding of the space part (a) and (b) because the external lid 10 is blocked. (6) is blocked by the auxiliary tie (8) formed on both sides of the tie bar (3) to prevent contamination of the outer lead 10, thereby improving the plating properties of the lead, and also forming process And by minimizing the defective rate in the singulation process it is possible to improve the quality of the product.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930031195A KR960014445B1 (en) | 1993-12-30 | 1993-12-30 | Structure of lead frame in an integrated circuit package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930031195A KR960014445B1 (en) | 1993-12-30 | 1993-12-30 | Structure of lead frame in an integrated circuit package |
Publications (2)
Publication Number | Publication Date |
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KR950021287A KR950021287A (en) | 1995-07-26 |
KR960014445B1 true KR960014445B1 (en) | 1996-10-15 |
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KR1019930031195A KR960014445B1 (en) | 1993-12-30 | 1993-12-30 | Structure of lead frame in an integrated circuit package |
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KR19980044247A (en) * | 1996-12-06 | 1998-09-05 | 황인길 | Molding method of semiconductor package |
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1993
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