JPH03116771A - Lead frame for semiconductor device - Google Patents
Lead frame for semiconductor deviceInfo
- Publication number
- JPH03116771A JPH03116771A JP25418889A JP25418889A JPH03116771A JP H03116771 A JPH03116771 A JP H03116771A JP 25418889 A JP25418889 A JP 25418889A JP 25418889 A JP25418889 A JP 25418889A JP H03116771 A JPH03116771 A JP H03116771A
- Authority
- JP
- Japan
- Prior art keywords
- tie bar
- plating
- lead
- outer lead
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 239000011347 resin Substances 0.000 claims abstract description 15
- 229920005989 resin Polymers 0.000 claims abstract description 15
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 238000005538 encapsulation Methods 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 238000007747 plating Methods 0.000 abstract description 21
- 238000007789 sealing Methods 0.000 abstract description 12
- 238000005520 cutting process Methods 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 3
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は樹脂封止型の半導体装置用リードフレームに関
し、特にその外部リードの構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a resin-sealed lead frame for a semiconductor device, and particularly to the structure of its external leads.
従来、この種の半導体装置用リードフレームは樹脂封止
前に錫もしくは錫−鉛合金めっきが施されており、その
外部リードの幅がタイバー部の内側、外側で同じ幅の構
造であった。Conventionally, lead frames for semiconductor devices of this type have been plated with tin or a tin-lead alloy before being sealed with resin, and have a structure in which the width of the external leads is the same on the inside and outside of the tie bar portion.
封止されたリードフレームは、その後のタイバーカット
工程で上述のタイバーが切断除去され、その後外部リー
ドを成形するという構造となっていた。The sealed lead frame had a structure in which the tie bars described above were cut and removed in a subsequent tie bar cutting process, and then external leads were formed.
上述した従来の樹脂封止前に錫もしくは錫−鉛合金めっ
きをしたリードフレームは、その外部リードの幅がタイ
バー部の内側と外側で同じ幅の構造となっているので、
モールド封入の際に樹脂封止金型によってクランプされ
、めっきがつぶされた場合、後工程のタイバー切断ある
いはリード曲げ加工にて針状にめっきが削られ、リード
間ショートを誘発するという欠点がある。The above-mentioned conventional lead frame that is plated with tin or tin-lead alloy before resin sealing has a structure in which the width of the external lead is the same on the inside and outside of the tie bar part.
If the plating is crushed by being clamped by the resin sealing mold during mold encapsulation, the plating will be scraped into needle-like shapes during the tie bar cutting or lead bending process in the subsequent process, causing a short circuit between the leads. .
本発明の目的は、樹脂封止前に予め錫、錫−鉛めっきが
施されているリードフレームにおいて、後工程のタイバ
ー切断の際に、めっきのはみ出しを原因とした針状のめ
っき削れの発生を防ぎ、シヨード等の事故防止をし、生
産性および品質の向上が出来る半導体装置用リードフレ
ームを提供することにある。The purpose of the present invention is to prevent the occurrence of needle-shaped plating scraping due to the plating protruding during tie bar cutting in the post-process in lead frames that have been previously plated with tin or tin-lead before resin sealing. It is an object of the present invention to provide a lead frame for a semiconductor device that can prevent accidents such as sills, and improve productivity and quality.
本発明の半導体装置用リードフレームは、樹脂封止前に
、錫、錫−鉛のめっきが施されているリードフレームに
おいて、タイバー部より内側の外部リードの幅がタイバ
ー部より外側の外部リードの幅よりも広いという構造を
有している。The lead frame for a semiconductor device of the present invention has a lead frame that is plated with tin or tin-lead before resin sealing, and the width of the external lead inside the tie bar portion is the same as that of the external lead outside the tie bar portion. It has a structure that is wider than its width.
次に、本発明について図面を参照して説明する。第1図
は本発明の一実施例の模式的平面図、第2図は第1図の
部分拡大図、第3図は樹脂封止後のタイバー切断工程に
おけるタイバー切断状態を示す模式的平面図である。Next, the present invention will be explained with reference to the drawings. FIG. 1 is a schematic plan view of an embodiment of the present invention, FIG. 2 is a partially enlarged view of FIG. 1, and FIG. 3 is a schematic plan view showing the tie bar cutting state in the tie bar cutting process after resin sealing. It is.
第1図〜第3図において、外部リード3は半導体装置の
樹脂封止パッケージ1の外で電気的導通を行なう部分で
あり、タイバー部4より内側の外部リード3aとタイバ
ー部より外側の外部リード3−bにおいて樹脂封止前に
錫、錫−鉛合金のめっきが予め施されている。タイバー
部4は樹脂封止の際にリードフレームが樹脂封止金型に
よってクランプされるがその金型の 間から漏れる樹脂
を塞き止め、ダム部2を形成する。In FIGS. 1 to 3, external leads 3 are parts that perform electrical conduction outside the resin-sealed package 1 of the semiconductor device, and external leads 3a are located inside the tie bar portion 4 and external leads 3a are located outside the tie bar portion. In 3-b, plating with tin or tin-lead alloy is applied in advance before resin sealing. The tie bar portion 4 blocks the resin leaking between the molds when the lead frame is clamped by the resin sealing mold during resin sealing, and forms the dam portion 2.
本実施例ではリードフレームの外部リード3においてタ
イバー部4より内側の外部リード3aがタイバー部より
外側の外部リード3bより巾が広いため樹脂封止の際に
外部リード3b上に塗布してあっためっきがつぶれてそ
の側面にはみ出し第5図の様にめっきのはみ出し5が形
成されるが、封入後工程のタイバー切断の際にはみ出し
ためっきが第3図の様にタイバーポンチに接触しないた
めにめっきのはみ出しは削りとられず第6図の様になり
、針状のけずれによるリード間ショートを防ぐ効果があ
る。In this embodiment, in the external lead 3 of the lead frame, the external lead 3a on the inside of the tie bar part 4 is wider than the external lead 3b on the outside of the tie bar part, so the resin was applied onto the external lead 3b during sealing. The plating is crushed and protrudes from the sides, forming a plating protrusion 5 as shown in Figure 5. However, when cutting the tie bar in the post-encapsulation process, the protruding plating does not come into contact with the tie bar punch as shown in Figure 3. The protruding plating is not scraped off and becomes as shown in Figure 6, which has the effect of preventing short circuits between the leads due to needle-like scratches.
第4図は本発明の他の実施例の部分拡大図である。タイ
バー部4より外側の外部リード3Cが先細りの構造とな
っており、タイバー切断の際にタイバーポンチが樹脂封
止の際にこの部分に生じためっきのはみ出しに接触しな
いために、このめっきのつぶれが削りとられて針状のけ
ずれとはならず、第1の実施例と同様リード間ショート
を防ぐ効果がある。FIG. 4 is a partially enlarged view of another embodiment of the present invention. The external lead 3C outside the tie bar part 4 has a tapered structure, and when cutting the tie bar, the tie bar punch does not come into contact with the protruding plating that occurs in this part during resin sealing, so this plating does not collapse. is not scraped off, resulting in needle-like scratches, and has the effect of preventing short-circuits between the leads as in the first embodiment.
以上説明したように本発明は樹脂封止前に予め錫、錫−
鉛めっきが施されているリードフレームにおいて、タイ
バー部より内側の外部リードが、タイバー部より外側の
外部リードよりも幅が広いために、後工程のタイバー切
断の際に、めっきのはみ出しを原因とした針状のめっき
削れの発生を防ぎ、ショート等の事故防止、生産性およ
び品質を向上できる効果がある。As explained above, in the present invention, tin, tin-
In a lead frame with lead plating, the external leads on the inside of the tie bar are wider than the external leads on the outside of the tie bar, which may cause the plating to stick out when cutting the tie bar in the later process. This has the effect of preventing the occurrence of needle-like plating scrapes, preventing accidents such as short circuits, and improving productivity and quality.
第1図は本発明の一実施例の模式的平面図、第2図は第
1図部分拡大図、第3図は一実施例の樹脂封止後のタイ
バー切断工程におけるタイバー切断状態を示す模式的平
面図、第4図は本発明の他の実施例の部分拡大図、第5
図は樹脂封止の際に生じる半田のつぶれ状態を示す斜視
図、第6図は本発明の第1の実施例の効果を説明するた
めの部分斜視図、第7図は従来の半導体装置用リードフ
レームの外部リードの模式的平面図である。
1・・・半導体装置、2・・・ダム部、3・・・外部リ
ード、3a・・・外部リード(タイバー部より内側部分
>、3b、3c・・・外部リード(タイバー部より外側
部分)、4・・・タイバー部、5・・・めっきのはみ出
し、6・・・タイバー・ポンチ。FIG. 1 is a schematic plan view of an embodiment of the present invention, FIG. 2 is a partially enlarged view of FIG. FIG. 4 is a partially enlarged view of another embodiment of the present invention, FIG.
The figure is a perspective view showing the collapsed state of solder that occurs during resin sealing, FIG. 6 is a partial perspective view for explaining the effect of the first embodiment of the present invention, and FIG. 7 is a conventional semiconductor device. FIG. 3 is a schematic plan view of external leads of the lead frame. DESCRIPTION OF SYMBOLS 1... Semiconductor device, 2... Dam part, 3... External lead, 3a... External lead (portion inside from the tie bar part>, 3b, 3c... External lead (portion outside from the tie bar part) , 4... Tie bar part, 5... Extrusion of plating, 6... Tie bar punch.
Claims (1)
部リードの構造が、タイバー部より内側の外部リードの
幅がタイバー部より外側の外部リードの幅より広く、か
つ樹脂封止前に外部リードに錫もしくは錫を含む合金の
めっきが施されていることを特徴とする半導体装置用リ
ードフレーム。In a resin-sealed lead frame for semiconductor devices, the structure of the external leads is such that the width of the external leads inside the tie bar is wider than the width of the external leads outside the tie bar, and the external leads are coated with tin before resin encapsulation. A lead frame for a semiconductor device characterized by being plated with an alloy containing tin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25418889A JPH03116771A (en) | 1989-09-28 | 1989-09-28 | Lead frame for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25418889A JPH03116771A (en) | 1989-09-28 | 1989-09-28 | Lead frame for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03116771A true JPH03116771A (en) | 1991-05-17 |
Family
ID=17261463
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25418889A Pending JPH03116771A (en) | 1989-09-28 | 1989-09-28 | Lead frame for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03116771A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7525180B2 (en) | 2005-10-24 | 2009-04-28 | Panasonic Corporation | Semiconductor mount substrate, semiconductor device and method of manufacturing semiconductor package |
-
1989
- 1989-09-28 JP JP25418889A patent/JPH03116771A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7525180B2 (en) | 2005-10-24 | 2009-04-28 | Panasonic Corporation | Semiconductor mount substrate, semiconductor device and method of manufacturing semiconductor package |
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