KR960009023A - Photosensitive film pattern formation method - Google Patents

Photosensitive film pattern formation method Download PDF

Info

Publication number
KR960009023A
KR960009023A KR1019940020657A KR19940020657A KR960009023A KR 960009023 A KR960009023 A KR 960009023A KR 1019940020657 A KR1019940020657 A KR 1019940020657A KR 19940020657 A KR19940020657 A KR 19940020657A KR 960009023 A KR960009023 A KR 960009023A
Authority
KR
South Korea
Prior art keywords
photosensitive film
film pattern
forming
decane
silicon
Prior art date
Application number
KR1019940020657A
Other languages
Korean (ko)
Inventor
백기호
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940020657A priority Critical patent/KR960009023A/en
Publication of KR960009023A publication Critical patent/KR960009023A/en

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명은 반도체 소자의 감광막 패턴을 형성방법에 관한 것으로, DESIRE 공정방법으로 감광막 패턴을 형성할때 실리레이션 용액으로 인체에 유해하지 않은 안전한 용액인 n-데칸(decane)이나 n-헵탄(heptane)을 사용하고, 확산 촉진제로 PGMEA(propylene glyxol methyl ether acetate)를 사용하여 작업자의 안전성을 향상시키고, 미세패턴에서 해상도 및 촛점심도를 증가시킬 수 있는 기술이다.The present invention relates to a method of forming a photosensitive film pattern of a semiconductor device, n-decane (n-decane) or n-heptane (safe), which is a safe solution that is not harmful to the human body when the photosensitive film pattern is formed by the DESIRE process method It is a technology that can improve the safety of the operator by using PGMEA (propylene glyxol methyl ether acetate) as a diffusion promoter, and to increase the resolution and depth of focus in the fine pattern.

Description

감광막 패턴 형성방법Photosensitive film pattern formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도 내지 제3도는 DESIRE 공정 방법으로 감광막 패턴을 형성하는 단계를 도시한 단면도.1 to 3 are cross-sectional views illustrating a step of forming a photoresist pattern by the DESIRE process method.

Claims (2)

반도체기판상에 하부층을 증착하고, 그 상부에 실리레이션용 감광막을 도포한 다음, 마스크를 이용한 노광공정으로 상기 감광막의 일정두께를 노광시켜 노광영역을 형성하는 단계와, 실리레이션 공정으로 상기 노광영역에 실리콘을 주입하여 실리콘 주입영역을 형성하는 단계와, 산소 플라즈마 식각공정을 실시하여 감광막패턴을 형성하는 단계를 포함하는 DESIRE 공정으로 감광막 패턴 형성방법에 있어서, 상기 실리레이션 공정에서 실리레이션 용액은 n-데칸(decane:CH3(CH2)8CH3)을 사용하고, 확산 촉진제로 PGMEA(propylene glycol methyl ether acetate)를 사용하는 것을 특징으로 하는 감광막 패턴 형성방법.Depositing a lower layer on a semiconductor substrate, applying a silicide photosensitive film on the semiconductor substrate, and then exposing a predetermined thickness of the photosensitive film by an exposure process using a mask to form an exposure region; In the method of forming a photoresist pattern by a DESIRE process comprising the step of forming a silicon injection region by implanting silicon into the silicon, and forming a photoresist pattern by performing an oxygen plasma etching process, the silicide solution is n -Decane (CH 3 (CH 2 ) 8 CH 3 ) is used, PGMEA (propylene glycol methyl ether acetate) as a diffusion accelerator using a photosensitive film pattern forming method. 제1항에 있어서, 상기 실리레이션 용액으로 n-데칸(decane:CH3(CH2)8CH3) 대신에 n-헵탄(heptane:CH3(CH2)5CH3)을 사용하는 것을 특징으로 하는 감광막 패턴 형성방법.The method of claim 1, wherein n-heptane (CH 3 (CH 2 ) 5 CH 3 ) is used instead of n-decane (CH 3 (CH 2 ) 8 CH 3 ) as the silicide solution. Photosensitive film pattern forming method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940020657A 1994-08-22 1994-08-22 Photosensitive film pattern formation method KR960009023A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940020657A KR960009023A (en) 1994-08-22 1994-08-22 Photosensitive film pattern formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940020657A KR960009023A (en) 1994-08-22 1994-08-22 Photosensitive film pattern formation method

Publications (1)

Publication Number Publication Date
KR960009023A true KR960009023A (en) 1996-03-22

Family

ID=66698278

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940020657A KR960009023A (en) 1994-08-22 1994-08-22 Photosensitive film pattern formation method

Country Status (1)

Country Link
KR (1) KR960009023A (en)

Similar Documents

Publication Publication Date Title
JP3158710B2 (en) Method of forming chemically amplified resist pattern
KR960005864A (en) Fine pattern formation method
KR960009023A (en) Photosensitive film pattern formation method
JPH1195418A (en) Photoresist film and pattern forming method
US6190837B1 (en) Method for forming photoresist film pattern
JPS57183030A (en) Manufacture of semiconductor device
KR0172588B1 (en) Method for forming a resist pattern for silylation
KR940009769A (en) Method of forming photoresist fine pattern of semiconductor device
KR970006930B1 (en) Formation method of micro-pattern in semiconductor elements
KR960000180B1 (en) Resist pattern forming method by silylation response
KR980003884A (en) Resist Pattern Formation Method
KR960002419B1 (en) Method of patterning silylation resist
KR940002974A (en) Single layer resist pattern formation method with improved etching selectivity
KR940015687A (en) Positive pattern formation method by silicide process
KR940009765A (en) Fine pattern formation method
KR960026099A (en) Method of manufacturing photoresist pattern using liquid silicide
KR960002239B1 (en) Method of resist patterning
KR950021155A (en) Micro pattern formation method of semiconductor device
KR950004394A (en) Photosensitive film pattern formation method
KR960002501A (en) Pattern formation method of semiconductor device
KR970003561A (en) Fine pattern formation method
KR940004747A (en) Resist Pattern Forming Method
KR890002990A (en) Manufacturing method of bipolar transistor
KR940015669A (en) Micro pattern formation method using organic arc layer
KR960042916A (en) Method of forming fine pattern of semiconductor device

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination