KR960026099A - Method of manufacturing photoresist pattern using liquid silicide - Google Patents

Method of manufacturing photoresist pattern using liquid silicide Download PDF

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Publication number
KR960026099A
KR960026099A KR1019940039209A KR19940039209A KR960026099A KR 960026099 A KR960026099 A KR 960026099A KR 1019940039209 A KR1019940039209 A KR 1019940039209A KR 19940039209 A KR19940039209 A KR 19940039209A KR 960026099 A KR960026099 A KR 960026099A
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South Korea
Prior art keywords
photoresist
photosensitive film
silicide
cross linker
photoresist pattern
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KR1019940039209A
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Korean (ko)
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KR0170898B1 (en
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백기호
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김주용
현대전자산업 주식회사
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Priority to KR1019940039209A priority Critical patent/KR0170898B1/en
Priority to CN95229419U priority patent/CN2246141Y/en
Publication of KR960026099A publication Critical patent/KR960026099A/en
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Publication of KR0170898B1 publication Critical patent/KR0170898B1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

본 발명은 반도체소자의 액상 실리레이션을 이용한 감광막패턴 제조방법에 관한 것으로, 액상 실리레이션공정의 도입으로 노광되지 않은 감광막의 상부에만 실리콘을 주입하고, 노광시 노광영역의 감광막에 크로스 링킹시켜서 포스트 베이크를 생략하고, 노광영역이 제거되어 프로파일이 양호한 감광막 패턴을 제조하는 기술이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a photoresist pattern using liquid phase silicide of a semiconductor device, wherein silicon is only injected into an upper portion of an unexposed photoresist by introduction of a liquid phase silicide process, and cross-linked to a photoresist layer in an exposure area during exposure to post-baking. Is omitted, and the exposure area is removed to produce a photosensitive film pattern having a good profile.

Description

액상 실리레이션을 이용한 감광막패턴 제조방법Method of manufacturing photoresist pattern using liquid silicide

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제4도 내지 제6도는 본 발명에 의한 액상 실리레이션을 이용한 감광막패턴을 형성하는 단계를 도시한 단면도.4 to 6 are cross-sectional views showing the step of forming a photosensitive film pattern using a liquid phase silicide according to the present invention.

Claims (14)

감광막패턴 제조방법에 있어서, 패턴하고자 하는 층 상부에 실리레이션용 감광막을 도포하는 단계와, 마스크를 통해 빛을 노광시켜 감광막에 노광영역을 형성함과 동시에 노광영역의 감광막이 크로스 링킹이 되도록 하는 단계와, 액상 실리레이션 용액을 이용하여 상기 감광막의 노광되지 않은 지역으로 실리콘을 주입하는 단계와, 산소 플라즈마 식각공정을 실시하여 상기 감광막에 실리콘 주입영역의 표면에서 산화막을 형성시켜 식각베리어층으로 역활을 하게하고, 실리콘이 주입되지 않은 부분의 감광막을 식각하여 노광영역이 제거되는 포지티브 톤의 감광막패턴을 형성하는 단계를 포함하는 것을 특징으로 하는 액상 실리레이션을 이용한 감광막 패턴 형성방법.A method of manufacturing a photoresist pattern, the method comprising: applying a silicide photoresist on a layer to be patterned; And implanting silicon into an unexposed area of the photoresist using a liquid silicide solution, and performing an oxygen plasma etching process to form an oxide film on the surface of the silicon injection region to serve as an etch barrier layer. And forming a positive tone photoresist pattern in which the exposure area is removed by etching the photoresist in the portion where the silicon is not implanted. 제1항에 있어서, 상기의 감광막은 노블릭 계통의 수지에 DUV에 민감한 포토 크로스 링커인 비사지드를 첨가하는 것을 특징으로 하는 액상 실리레이션을 이용한 감광막패턴 제조방법.The method of claim 1, wherein the photosensitive film is a photocross linker that is susceptible to DUV. 제2항에 있어서, 상기의 크로스 링커는 열적 크로스 링커 또는 케미칼 크로스 링커인 것을 특징으로 하는 액상 실리레이션을 이용한 감광막패턴 제조방법.The method of claim 2, wherein the cross linker is a thermal cross linker or a chemical cross linker. 제1항에 있어서, 상기 액상 실리레이션 용액은 B[DMA]DS(bisdimethly amino dimetyl silane)과 확산 촉진제와 용매를 포함하는 것을 특징으로 하는 액상 실리레이션을 이용한 감광막패턴 제조방법.The method of claim 1, wherein the liquid silicide solution comprises B [DMA] DS (bisdimethly amino dimetyl silane), a diffusion accelerator, and a solvent. 제4항에 있어서, 상기 확산 촉진제는 NMP(N-methyl-2-pyrrolidone) 또는 PGMEA(propylen glicol methyl ether acetate)인 것을 특징으로 하는 액상 실리레이션을 이용한 감광막패턴 제조방법.The method of claim 4, wherein the diffusion promoter is NMP (N-methyl-2-pyrrolidone) or PGMEA (propylen glicol methyl ether acetate). 제4항에 있어서, 상기 용매는 크실렌, n-decane 또는 n-헵톤인 것을 특징으로 하는 액상 실리레이션을 이용한 감광막패턴 제조방법.The method of claim 4, wherein the solvent is xylene, n-decane, or n-heptone. 제4항에 또는 제5항에 있어서, 상기 NMP를 확산 촉진제로 사용할 경우 0.1~10%정도 포함되는 것을 특징으로 하는 액상 실리레이션을 이용한 감광막패턴 제조방법.The method of claim 4 or 5, wherein when the NMP is used as a diffusion accelerator, about 0.1 to about 10% is included. 제4항에 있어서, B[DMA]DS를 1~20%정도 포함되는 것을 특징으로 하는 액상 실리레이션을 이용한 감광막패턴 제조방법.The method of claim 4, wherein the B [DMA] DS is contained in an amount of about 1 to 20%. 제1항에 있어서, 상기 감광막을 도포하고, 소프트 베이크를 135~140℃에서 실시하는 것을 특징으로 하는 액상 실리레이션을 이용한 감광막패턴 제조방법.The method of claim 1, wherein the photosensitive film is coated and soft bake is performed at 135 to 140 ° C. 3. 제1항에 있어서, 상기 포토 크로스 랭커는 1~95%정도 감광막에 포함되는 것을 특징으로 하는 액상 실리레이션을 이용한 감광막패턴 제조방법.The method of claim 1, wherein the photocross ranker is included in the photoresist by about 1% to about 95%. 제1항에 있어서, 상기 노볼락 계통의 수지가 1~95%정도 감광막에 포함되는 것을 특징으로 하는 액상 실리레이션을 이용한 감광막패턴 제조방법.The method of claim 1, wherein the novolak-based resin is included in the photosensitive film by about 1% to 95%. 제1항에 있어서, 상기 열적 크로스 링커가 1~94%정도 감광막에 포함되는 것을 특징으로 하는 액상 실리레이션을 이용한 감광막패턴 제조방법.The method of claim 1, wherein the thermal cross linker is included in the photosensitive film by 1 to 94%. 제1항에 있어서, 상기 액상 실리레이션용 감광막에 용매가 1~50%정도로 포함되는 것을 특징으로 하는 액상 실리레이션을 이용한 감광막패턴 제조방법.The method of claim 1, wherein a solvent is included in the liquid silicide photosensitive film in an amount of about 1 to 50%. 제1항에 있어서, 상기 산소 플라즈마 식각방법으로 고밀도 플라즈마 식각방법을 사용하는 것을 특징으로 하는 액상 실리레이션을 이용한 감광막패턴 제조방법.The method of claim 1, wherein a high density plasma etching method is used as the oxygen plasma etching method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940039209A 1994-12-19 1994-12-30 Method of manufacturing photosensitive film pattern using liquid sililation KR0170898B1 (en)

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KR1019940039209A KR0170898B1 (en) 1994-12-30 1994-12-30 Method of manufacturing photosensitive film pattern using liquid sililation
CN95229419U CN2246141Y (en) 1994-12-19 1995-12-28 Antoading appts. in use for bulk trailer

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KR1019940039209A KR0170898B1 (en) 1994-12-30 1994-12-30 Method of manufacturing photosensitive film pattern using liquid sililation

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KR960026099A true KR960026099A (en) 1996-07-22
KR0170898B1 KR0170898B1 (en) 1999-03-30

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