KR960003595B1 - 집적 반도체 회로 - Google Patents

집적 반도체 회로 Download PDF

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Publication number
KR960003595B1
KR960003595B1 KR1019920004472A KR920004472A KR960003595B1 KR 960003595 B1 KR960003595 B1 KR 960003595B1 KR 1019920004472 A KR1019920004472 A KR 1019920004472A KR 920004472 A KR920004472 A KR 920004472A KR 960003595 B1 KR960003595 B1 KR 960003595B1
Authority
KR
South Korea
Prior art keywords
channel transistor
circuit
boost
signal
integrated semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019920004472A
Other languages
English (en)
Korean (ko)
Other versions
KR920018758A (ko
Inventor
미끼 니시모리
테루오 세끼
Original Assignee
후지쓰 가부시끼가이샤
세끼사와 요시
후지쓰 브이 엘 에스 아이 가부시끼가이샤
하요시 도시유끼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지쓰 가부시끼가이샤, 세끼사와 요시, 후지쓰 브이 엘 에스 아이 가부시끼가이샤, 하요시 도시유끼 filed Critical 후지쓰 가부시끼가이샤
Publication of KR920018758A publication Critical patent/KR920018758A/ko
Application granted granted Critical
Publication of KR960003595B1 publication Critical patent/KR960003595B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Radar, Positioning & Navigation (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)
  • Read Only Memory (AREA)
  • Dc-Dc Converters (AREA)
KR1019920004472A 1991-03-18 1992-03-18 집적 반도체 회로 Expired - Fee Related KR960003595B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP3051874A JPH04287418A (ja) 1991-03-18 1991-03-18 半導体集積回路
JP91-051874 1991-03-18
JP91-51874 1991-03-18

Publications (2)

Publication Number Publication Date
KR920018758A KR920018758A (ko) 1992-10-22
KR960003595B1 true KR960003595B1 (ko) 1996-03-20

Family

ID=12899032

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920004472A Expired - Fee Related KR960003595B1 (ko) 1991-03-18 1992-03-18 집적 반도체 회로

Country Status (4)

Country Link
US (1) US5187397A (enExample)
EP (1) EP0505158A2 (enExample)
JP (1) JPH04287418A (enExample)
KR (1) KR960003595B1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3122239B2 (ja) * 1992-07-23 2001-01-09 株式会社東芝 半導体集積回路
KR0130040B1 (ko) * 1993-11-09 1998-10-01 김광호 반도체 집적회로의 전압 승압회로
GB9423035D0 (en) * 1994-11-15 1995-01-04 Sgs Thomson Microelectronics Voltage boost circuit for a memory device
KR0137317B1 (ko) * 1994-12-29 1998-04-29 김광호 반도체 메모리소자의 활성싸이클에서 사용되는 승압회로
JP3094913B2 (ja) * 1996-06-19 2000-10-03 日本電気株式会社 半導体回路
JP2956645B2 (ja) * 1997-04-07 1999-10-04 日本電気株式会社 半導体装置
US5933386A (en) * 1997-12-23 1999-08-03 Mitsubishi Semiconductor America, Inc. Driving memory bitlines using boosted voltage
US6885275B1 (en) 1998-11-12 2005-04-26 Broadcom Corporation Multi-track integrated spiral inductor
US6445039B1 (en) 1998-11-12 2002-09-03 Broadcom Corporation System and method for ESD Protection
WO2000042659A2 (en) 1999-01-15 2000-07-20 Broadcom Corporation System and method for esd protection
US7687858B2 (en) 1999-01-15 2010-03-30 Broadcom Corporation System and method for ESD protection
US8405152B2 (en) 1999-01-15 2013-03-26 Broadcom Corporation System and method for ESD protection
US6671816B1 (en) 1999-06-29 2003-12-30 Broadcom Corporation System and method for independent power sequencing of integrated circuits
US7439592B2 (en) 2004-12-13 2008-10-21 Broadcom Corporation ESD protection for high voltage applications
US7505238B2 (en) 2005-01-07 2009-03-17 Agnes Neves Woo ESD configuration for low parasitic capacitance I/O

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3983414A (en) * 1975-02-10 1976-09-28 Fairchild Camera And Instrument Corporation Charge cancelling structure and method for integrated circuits
US4092548A (en) * 1977-03-15 1978-05-30 International Business Machines Corporation Substrate bias modulation to improve mosfet circuit performance
JPS62136919A (ja) * 1985-12-10 1987-06-19 Mitsubishi Electric Corp ドライバ−回路
GB2226727B (en) * 1988-10-15 1993-09-08 Sony Corp Address decoder circuits for non-volatile memories
JP2652694B2 (ja) * 1988-12-28 1997-09-10 三菱電機株式会社 昇圧回路

Also Published As

Publication number Publication date
US5187397A (en) 1993-02-16
KR920018758A (ko) 1992-10-22
EP0505158A2 (en) 1992-09-23
EP0505158A3 (enExample) 1994-01-26
JPH04287418A (ja) 1992-10-13

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