KR960003002A - 반도체 레이저의 제조방법 - Google Patents
반도체 레이저의 제조방법 Download PDFInfo
- Publication number
- KR960003002A KR960003002A KR1019950016989A KR19950016989A KR960003002A KR 960003002 A KR960003002 A KR 960003002A KR 1019950016989 A KR1019950016989 A KR 1019950016989A KR 19950016989 A KR19950016989 A KR 19950016989A KR 960003002 A KR960003002 A KR 960003002A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor laser
- laser chip
- manufacturing
- submount
- main part
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
1.청구범위에 기재된 발명이 속한 기술분야
본 발명은 반도체 레이저의 제조방법에 관한 것이다.
2.발명이 해결하려고 하는 기술적 과제
레이저칩(1)의 발광단면(3)에 도포막(5)을 형성하는 때에 도포막(5)이 레이저칩(1)의 전극(2)에 침입하는 것을 확실히 방지하고 더구나 양산에 적합한 반도체 레이저의 제조방법을 제공하는 것이다.
3.발명의 해결방법의 요지
반도체 레이저칩(1)을 서브마운트(10)의 다이본부(11)에 고착시키고 상기한 반도체 레이저칩(1)의 전극(2)과 서브마운트(10)의 와이어본부(14)를 도체로 접속한 후 반도체 레이저칩(1)의 발광단면(3)에 도포막(5)을 형성하는 것을 특징으로 하는 반도체 레이저의 제조방법이다.
4.발명의 중요한 용도
반도체 레이저의 제조방법에 관한 것이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제조방법의 실시예를 설명하기 위한 것으로 웨이퍼를 레이저칩으로 분할한 상태를 나타내는 도면.
Claims (2)
- 반도체 레이저칩(1)을 서브마운트(10)의 다이본부(11)에 고착시키고 상기한 반도체 레이저칩(1)의 전극(2)과 서브마운트(10)의 와이어본부(14)를 도체로 접속한 후 반도체 레이저칩(1)의 발광단면(3)에 도포막(5)을 형성하는 것을 특징으로 하는 반도체 레이저의 제조방법.
- 제1항에 있어서,상기한 레이저칩(1)의 도포막(5)의 형성은 상기한 레이저칩(1)을 탑재시킨 서브마운트(10)의 표면전극(13)을 덮고 복수개를 나란히 한 상태로 행하는 것을 특징으로 하는 반도체 레이저의 제조방법.※ 참고사항: 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP94-146887 | 1994-06-29 | ||
| JP6146887A JPH0818150A (ja) | 1994-06-29 | 1994-06-29 | 半導体レーザの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960003002A true KR960003002A (ko) | 1996-01-26 |
| KR100348471B1 KR100348471B1 (ko) | 2002-10-31 |
Family
ID=15417829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950016989A KR100348471B1 (ko) | 1994-06-29 | 1995-06-23 | 반도체레이저의제조방법 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5612258A (ko) |
| JP (1) | JPH0818150A (ko) |
| KR (1) | KR100348471B1 (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4050865B2 (ja) * | 1999-12-01 | 2008-02-20 | シャープ株式会社 | 半導体レーザ装置及びその製造方法及びそれを用いた光ピックアップ |
| DE112019007051B4 (de) | 2019-03-18 | 2024-04-18 | Mitsubishi Electric Corporation | Verfahren zum Herstellen einer Halbleiterlaservorrichtung |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5049527A (en) * | 1985-06-25 | 1991-09-17 | Hewlett-Packard Company | Optical isolator |
| NL8700904A (nl) * | 1987-04-16 | 1988-11-16 | Philips Nv | Halfgeleiderlaserinrichting en werkwijze voor het vervaardigen daarvan. |
| US5024966A (en) * | 1988-12-21 | 1991-06-18 | At&T Bell Laboratories | Method of forming a silicon-based semiconductor optical device mount |
| JPH03173483A (ja) * | 1989-12-01 | 1991-07-26 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP3027479B2 (ja) * | 1992-10-08 | 2000-04-04 | ローム株式会社 | 発光ダイオード光源 |
| US5324387A (en) * | 1993-05-07 | 1994-06-28 | Xerox Corporation | Method of fabricating asymmetric closely-spaced multiple diode lasers |
-
1994
- 1994-06-29 JP JP6146887A patent/JPH0818150A/ja active Pending
-
1995
- 1995-06-23 KR KR1019950016989A patent/KR100348471B1/ko not_active IP Right Cessation
- 1995-06-27 US US08/495,100 patent/US5612258A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0818150A (ja) | 1996-01-19 |
| KR100348471B1 (ko) | 2002-10-31 |
| US5612258A (en) | 1997-03-18 |
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| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20110617 Year of fee payment: 10 |
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| LAPS | Lapse due to unpaid annual fee |