KR960002639A - Method for forming BPSG film of semiconductor device - Google Patents

Method for forming BPSG film of semiconductor device Download PDF

Info

Publication number
KR960002639A
KR960002639A KR1019940013499A KR19940013499A KR960002639A KR 960002639 A KR960002639 A KR 960002639A KR 1019940013499 A KR1019940013499 A KR 1019940013499A KR 19940013499 A KR19940013499 A KR 19940013499A KR 960002639 A KR960002639 A KR 960002639A
Authority
KR
South Korea
Prior art keywords
semiconductor device
bpsg film
forming
bpsg
atoms
Prior art date
Application number
KR1019940013499A
Other languages
Korean (ko)
Inventor
정창원
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940013499A priority Critical patent/KR960002639A/en
Publication of KR960002639A publication Critical patent/KR960002639A/en

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

본 발명은 반도체 소자의 BPSG막 형성방법에 관한 것으로, BPSG증착시 P원자의 농도가 B원자의 농도에 비해 과도하게 첨가됨으로 인해 플로우 공정시 발생되는 결정결함을 방지하기 위하여 소오스 가스(Source Gas)의 량을 소정의 비율로 조절하여 BPSG를 증착(Deposition) 시키므로써 상부에 형성되는 금속층의 스텝커버리지 및 질이 개선되어 소자의 전기적 특성을 향상시킬 수 있도록 한 반도체 소자의 BPSG막 형성방법에 관한 것이다.The present invention relates to a method for forming a BPSG film of a semiconductor device, source gas in order to prevent crystal defects generated during the flow process due to the excessive addition of P atoms in the BPSG deposition compared to the concentration of B atoms. The present invention relates to a method for forming a BPSG film of a semiconductor device in which the step coverage and quality of a metal layer formed thereon are improved by controlling the amount of the compound at a predetermined ratio, thereby improving the electrical characteristics of the device. .

Description

반도체 소자의 비피에스지(BPSG)막 형성방법Method for forming BPSG film of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 의해 형성된 BPSG막을 갖는 소자의 단면도.2 is a cross-sectional view of a device having a BPSG film formed by the present invention.

Claims (1)

반도체 소자의 BPSG막을 형성방법에 있어서, 금속층 형성전 하부의 편탄화 및 절연을 위해 P/B몰비가 2.5이하가 되도록 PH3및 B2H6소오스 가스량을 조절하여 BPSG를 증착한 후 플로우시키는 것을 특징으로 하는 반도체 소자의 BPSG막 형성방법.In the method of forming a BPSG film of a semiconductor device, the flow rate is controlled by depositing BPSG by controlling the amount of PH 3 and B 2 H 6 source gas such that the P / B molar ratio is 2.5 or less for the sake of carbonization and insulation of the lower part before forming the metal layer. A method for forming a BPSG film of a semiconductor device. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940013499A 1994-06-15 1994-06-15 Method for forming BPSG film of semiconductor device KR960002639A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940013499A KR960002639A (en) 1994-06-15 1994-06-15 Method for forming BPSG film of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940013499A KR960002639A (en) 1994-06-15 1994-06-15 Method for forming BPSG film of semiconductor device

Publications (1)

Publication Number Publication Date
KR960002639A true KR960002639A (en) 1996-01-26

Family

ID=66685743

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940013499A KR960002639A (en) 1994-06-15 1994-06-15 Method for forming BPSG film of semiconductor device

Country Status (1)

Country Link
KR (1) KR960002639A (en)

Similar Documents

Publication Publication Date Title
TW350135B (en) Semiconductor device and method of manufacturing the same the invention relates to a semiconductor device and method of manufacturing the same
JPS5587444A (en) Method of forming insulating film on semiconductor surface
KR960002639A (en) Method for forming BPSG film of semiconductor device
KR950004499A (en) Metal wiring formation method of semiconductor device
EP1037271A3 (en) Method for forming an interlayer insulating film, and semiconductor device
KR960026277A (en) BPSG film formation method of semiconductor device
KR940001279A (en) Metal wiring formation method of semiconductor
KR960005797A (en) Semiconductor Device Wiring Formation Method
KR970023837A (en) Method of manufacturing a gate insulating film
KR970052090A (en) A semiconductor device having a plasma CVD method and a metal film formed thereby
KR980005677A (en) Silicide Formation Method of Semiconductor Device
KR970023664A (en) Method for forming conductive layer in semiconductor device
KR970052904A (en) BPS film formation method
KR930008988A (en) BPSG film formation method
KR870009448A (en) Thin Film Formation Method
KR940016505A (en) Contact formation method of semiconductor device
KR940021758A (en) Deposition Method of Tungsten Thin Film
JPS57149776A (en) Formation of high-melting point metal and silicon compound thin film
KR960019514A (en) Method of forming contact window of semiconductor device
KR890005881A (en) Method for manufacturing thin film transistor of amorphous silicon
KR930024099A (en) Metal wiring formation method of semiconductor device
KR930024105A (en) Aluminum metal wiring formation method of silicon semiconductor device using tungsten nitride thin film as barrier metal
KR970052893A (en) Tungsten Silicide Layer Formation Method of Semiconductor Device
KR970052025A (en) PS Formation Method of Semiconductor Device
KR930011117A (en) Blanket CVD Tungsten Formation Method

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application